Jeffrey Scott Cites

Polysulfone as an electro-optic polymer host material

The practicality of using polysulfone as a host material for electro-optic polymer devices is demonstrated. For loadings of 15–25 weight %, r33 values of 53–55 pm/V were obtained at λ=1.06 μm. This corresponds to chromophore alignment efficiencies of up to 27%. Also, Mach–Zehnder devices demonstrated the implementation of a polysulfone host with a Vπ of 6.9 v, optical loss of 1.8 dB/cm, and thermal stability >100 °C.

Ultrathin Si Thin-Film Transistor on Glass

We have studied the fabrication of ultrathin single-crystalline-silicon thin-film transistors (TFTs) on glass. The single-crystalline Si layer was transferred to glass by hydrogen implantation and anodic bonding. The thickness of the silicon-on-glass (SiOG) was controlled down to 10 nm by dry etching. The p-channel SiOG TFTs with 10-nm-thick Si exhibited the field-effect mobility of 134.9 cm2/Vmiddots, threshold voltage of -1.5 V, and gate voltage swing of 0.13 V/dec. The TFTs were found to be stable against gate bias stress of +30 or -30 V.

INTEGRATION OF NONLINEAR OPTICAL POLYMER WAVEGUIDES WITH INGAAS P-I-N PHOTODIODES

Performance requirements for systems employing optical guided wave components may be satisfied more easily through the hybrid integration of nonlinear optical (NLO) polymers and semiconductors. Reported in this letter, is the integration of NLO polymer waveguides with InGaAs p‐i‐n photodetectors at 1.3 μm, with coupling efficiencies greater than 99% and system responsivities of 0.84 A/W. An analysis of the structure using a two‐dimensional beam propagation model was performed. Planarization was maintained and the design allows for further integration of optoelectronic components.

41.4: AMOLED based on Silicon-On-Glass (SiOG) Technology

We have demonstrated that the single crystalline silicon films on the glass substrates can be utilized in the conventional mass production lines. The single crystalline Si layers were transferred to the 370 mm × 470 mm glass substrates using Silicon-On-Glass (SiOG) technology. Using the thin film transistor backplanes made by conventional CMOS technology, 2.4″ qVGA AMOLED with integrated circuits were successfully fabricated. A completed 2.4″ qVGA AMOLED module shows wide viewing angle (> 170°) and 73% color gamut. The advantages of SiOG technology and its significances will be presented.

P-197L: Late-News Poster: Demonstration of High Performance TFTs on Silicon-on-Glass (SiOG) Substrate

This report is an introduction to a new silicon-on-glass (SiOG) substrate and device technology. The fabrication and analysis of CMOS devices fabricated using SiOG are presented. The SiOG devices are comparable to those fabricated on SOI wafers with respect to carrier mobility and off-state leakage current. This technology clearly demonstrates the potential for system-on-panel integration.

Silicon-on-Glass (SiOG) substrate technology: Process and materials properties

This paper is an introduction to a new Silicon-on-Glass substrate technology. The fabrication process and material properties of SiOG are presented. The semiconductor film has good electrical properties, comparable to other SOI technologies, and is strongly attached to a large area transparent substrate via an in-situ barrier layer compatible with FPD processing.

Diffractive optical components for fiber-to-waveguide couplers

This study investigates the use of diffractive optical components for efficient, mode-matched optical fiber-to-waveguide coupling. In this study a single element, with diffractive lenses on both back and front surfaces, is designed, fabricated, and tested. The element transforms the optical beam profile exiting a laser diode from a divergent, elliptical mode profile into a collimated beam of circular mode shape. The output beam shape and optical efficiency of the diffractive element are measured. Test results agree favorably with expected values.

Investigation of Ion implantation induced electrically active defects in p-type silicon

We investigated ion implantation induced electrically active defects in p-type silicon using Deep Level Transient Spectroscopy (DLTS) and photoconductivity spectroscopy at cryogenic temperatures. Implantation related deep traps in H2, B11, and P31 implanted p-type Si and their recovery under isothermal annealing are described. We observed distinct deep trap levels located in the energy range between 0.25 eV up to 0.53 eV away from the valence band edge, which was either suppressed or eliminated upon thermal annealing below 600 °C. Supporting the DLTS results, photoconductivity shows strong recovery of a broad absorption band present near the conduction band edge upon thermal annealing. In this paper, we discuss the origin of the broad photoconductivity absorptions and DLTS emission in Si and their relation to the ion implantation induced damage to the lattice structure.