Jerry A. Simmons

InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Electrical operation of InGaN/GaN quantum-well heterostructure photonic crystal light-emitting diodes (PXLEDs) is demonstrated. A triangular lattice photonic crystal is formed by dry etching into the top GaN layer. Light absorption from the metal contact is minimized because the top GaN layers are engineered to provide lateral current spreading, allowing carrier recombination proximal to the photonic crystal yet displaced from the metal contact. The chosen lattice spacing for the photonic crystal causes Bragg scattering of guided modes out of the LED, increasing the extraction efficiency. The far-field radiation patterns of the PXLEDs are heavily modified and display increased radiance, up to ∼1.5 times brighter compared to similar LEDs without the photonic crystal.

Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors

Double-quantum-well field-effect transistors with a grating gate exhibit a sharply resonant, voltage tuned terahertz photoconductivity. The voltage tuned resonance is determined by the plasma oscillations of the composite structure. The resonant photoconductivity requires a double-quantum well but the mechanism whereby plasma oscillations produce changes in device conductance is not understood. The phenomenon is potentially important for fast, tunable terahertz detectors.

Solid-State Lighting: An Integrated Human Factors, Technology, and Economic Perspective

Solid-state lighting is a rapidly evolving technology, now virtually certain to someday displace traditional lighting in applications ranging from the lowest-power spot illuminator to the highest-power area illuminator. Moreover, it has considerable headroom for continued evolution even after this initial displacement. In this paper, we present a high-level overview of solid-state lighting, with an emphasis on white lighting suitable for general illumination. We characterize in detail solid-state lightings past and potential-future evolution using various performance and cost metrics, with special attention paid to inter-relationships between these metrics imposed by human factors, technology, and economic considerations.

Solid-state lighting: an energy-economics perspective

Artificial light has long been a significant factor contributing to the quality and productivity of human life. As a consequence, we are willing to use huge amounts of energy to produce it. Solid-state lighting (SSL) is an emerging technology that promises performance features and efficiencies well beyond those of traditional artificial lighting, accompanied by potentially massive shifts in (a) the consumption of light, (b) the human productivity and energy use associated with that consumption and (c) the semiconductor chip area inventory and turnover required to support that consumption. In this paper, we provide estimates of the baseline magnitudes of these shifts using simple extrapolations of past behaviour into the future. For past behaviour, we use recent studies of historical and contemporary consumption patterns analysed within a simple energy-economics framework (a Cobb‐Douglas production function and profit maximization). For extrapolations into the future, we use recent reviews of believed-achievable long-term performance targets for SSL. We also discuss ways in which the actual magnitudes could differ from the baseline magnitudes of these shifts. These include: changes in human societal demand for light; possible demand for features beyond lumens; and guidelines and regulations aimed at economizing on consumption of light and associated energy. (Some figures in this article are in colour only in the electronic version)

Giant microwave photoresistance of two-dimensional electron gas

We measure microwave frequency (4–40 GHz) photoresistance at low magnetic field B, in high mobility two-dimensional electron gas samples, excited by signals applied to a transmission line fabricated on the sample surface. Oscillatory photoresistance vs B is observed. For excitation at the cyclotron resonance frequency, we find a giant relative photoresistance ΔR/R of up to 250%. The photoresistance is apparently proportional to the square root of applied power, and disappears as the temperature is increased.

Zener tunneling between Landau orbits in a high-mobility two-dimensional electron gas.

Magnetotransport in a laterally confined two-dimensional electron gas (2DEG) can exhibit modified scattering channels owing to a tilted Hall potential. Transitions of electrons between Landau levels with shifted guiding centers can be accomplished through a Zener tunneling mechanism, and make a significant contribution to the magnetoresistance. A remarkable oscillation effect in weak field magnetoresistance has been observed in high-mobility 2DEGs in GaAs -Al Ga 0.3As (0.7) heterostructures, and can be well explained by the Zener mechanism.

Resistivity of dilute 2D electrons in an undoped GaAs heterostructure

We report resistivity measurements from 0.03 to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, 0.16 x 10(10) to 7.5 x 10(10) cm(-2), are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This nonmonotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk, and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured.

Interaction corrections to two-dimensional hole transport in thelarge−rslimit

The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large r{sub s} is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter F{sub 0}{sup {sigma}} determined from the experiment, however, decreases with increasing r{sub s} for r{sub s} {approx}> 22, a behavior unexpected from existing theoretical calculations valid for small r{sub s}.

Planar quantum transistor based on 2D–2D tunneling in double quantum well heterostructures

We report on our work on the double electron layer tunneling transistor (DELTT), based on the gate-control of two-dimensional -- two-dimensional (2D-2D) tunneling in a double quantum well heterostructure. While previous quantum transistors have typically required tiny laterally-defined features, by contrast the DELTT is entirely planar and can be reliably fabricated in large numbers. We use a novel epoxy-bond-and-stop-etch (EBASE) flip-chip process, whereby submicron gating on opposite sides of semiconductor epitaxial layers as thin as 0.24 microns can be achieved. Because both electron layers in the DELTT are 2D, the resonant tunneling features are unusually sharp, and can be easily modulated with one or more surface gates. We demonstrate DELTTs with peak-to-valley ratios in the source-drain I-V curve of order 20:1 below 1 K. Both the height and position of the resonant current peak can be controlled by gate voltage over a wide range. DELTTs with larger subband energy offsets ({approximately} 21 meV) exhibit characteristics that are nearly as good at 77 K, in good agreement with our theoretical calculations. Using these devices, we also demonstrate bistable memories operating at 77 K. Finally, we briefly discuss the prospects for room temperature operation, increases in gain, and high-speed.

Nonlocal resonant interaction between coupled quantum wires

We study the transport in a system of coupled quantum wires and show evidence for a resonant interaction that occurs whenever one of them is biased close to pinch off. Measuring the conductance of one of the wires, as the width of the other is varied, we observe a resonant peak in the conductance that is correlated to the point at which the other wire pinches off. The origin of this interaction remains undetermined at present, although its characteristics appear consistent with predictions that a correlated many-body state should form in narrow wires as their conductance vanishes.