JiYeon Ku

Porous PVDF As Effective Sonic Wave Driven Nanogenerators

Piezomaterials are known to display enhanced energy conversion efficiency at nanoscale due to geometrical effect and improved mechanical properties. Although piezoelectric nanowires have been the most widely and dominantly researched structure for this application, there only exist a limited number of piezomaterials that can be easily manufactured into nanowires, thus, developing effective and reliable means of preparing nanostructures from a wide variety of piezomaterials is essential for the advancement of self-powered nanotechnology. In this study, we present nanoporous arrays of polyvinylidene fluoride (PVDF), fabricated by a lithography-free, template-assisted preparation method, as an effective alternative to nanowires for robust piezoelectric nanogenerators. We further demonstrate that our porous PVDF nanogenerators produce the rectified power density of 0.17 mW/cm3 with the piezoelectric potential and the piezoelectric current enhanced to be 5.2 times and 6 times those from bulk PVDF film nanogenerators under the same sonic-input.

Engineering of efficiency limiting free carriers and an interfacial energy barrier for an enhancing piezoelectric generation

The energy harvesting efficiency is of tremendous importance for the realization of a high output-power nanogenerator serving as the basis for self-powered electronics. Here we report that the device performance of a sound-driven piezoelectric energy nanogenerator (SPENG) is remarkably improved by controlling both the carrier density and the interfacial energy in a semiconducting ZnO nanowire (NW), thereby achieving its intrinsic efficiency limits. A SPENG with carrier-controlled ZnO NWs exhibits excellent energy harvesting characteristics with an average power density of 0.9 mW cm−3, as well as a near 50 fold increase in both output voltage and current compared to those of a conventional ZnO NW. In addition, we demonstrate for the first time that an optimized SPENG is large enough and very suitable to drive electrophoretic ink displays based on voltage-drive systems. This fundamental progress makes it possible to fabricate high performance nanogenerators for viable industrial applications in portable/wearable personal electronics such as electronic papers and smart identity cards.

Heterogeneous stacking of nanodot monolayers by dry pick-and-place transfer and its applications in quantum dot light-emitting diodes

Layered assembly structures composed of nanomaterials, such as nanocrystals, have attracted considerable attention as promising candidates for new functional devices whose optical, electromagnetic and electronic behaviours are determined by the spatial arrangement of component elements. However, difficulties in handling each constituent layer in a material-specific manner limit the 3D integration of disparate nanomaterials into the appropriate heterogeneous electronics. Here we report a pick-and-place transfer method that enables the transfer of large-area nanodot assemblies. This solvent-free transfer utilizes a lifting layer and allows for the reliable transfer of a quantum dot (QD) monolayer, enabling layer-by-layer design. With the controlled multistacking of different bandgap QD layers, we are able to probe the interlayer energy transfer among different QD monolayers. By controlling the emission spectrum through such designed monolayer stacking, we have achieved white emission with stable optoelectronic properties, the closest to pure white among the QD light-emitting diodes reported so far.

Enhancement of piezoelectricity via electrostatic effects on a textile platform

We have shown the enhanced piezoelectricity by electrostatic effects on a textile based platform. The electrostatic and piezoelectric effects were hybridized by integrating piezoelectric ZnO nanowires and a charged dielectric film on a wearable textile substrate. The hybrid textile nanogenerator produced an output voltage of 8 V and an output current of 2.5 μA. Using a simple AC–DC converter circuit, we operated the green organic light-emitting diode and a liquid crystal display panel using a 100 dB sonic wave.

Nanoscale control of phonon excitations in graphene

Phonons, which are collective excitations in a lattice of atoms or molecules, play a major role in determining various physical properties of condensed matter, such as thermal and electrical conductivities. In particular, phonons in graphene interact strongly with electrons; however, unlike in usual metals, these interactions between phonons and massless Dirac fermions appear to mirror the rather complicated physics of those between light and relativistic electrons. Therefore, a fundamental understanding of the underlying physics through systematic studies of phonon interactions and excitations in graphene is crucial for realising graphene-based devices. In this study, we demonstrate that the local phonon properties of graphene can be controlled at the nanoscale by tuning the interaction strength between graphene and an underlying Pt substrate. Using scanning probe methods, we determine that the reduced interaction due to embedded Ar atoms facilitates electron–phonon excitations, further influencing phonon-assisted inelastic electron tunnelling.

Surface energy-mediated construction of anisotropic semiconductor wires with selective crystallographic polarity

ZnO is a wide band-gap semiconductor with piezoelectric properties suitable for opto-electronics, sensors, and as an electrode material. Controlling the shape and crystallography of any semiconducting nanomaterial is a key step towards extending their use in applications. Whilst anisotropic ZnO wires have been routinely fabricated, precise control over the specific surface facets and tailoring of polar and non-polar growth directions still requires significant refinement. Manipulating the surface energy of crystal facets is a generic approach for the rational design and growth of one-dimensional (1D) building blocks1234. Although the surface energy is one basic factor for governing crystal nucleation and growth of anisotropic 1D structures, structural control based on surface energy minimization has not been yet demonstrated56789. Here, we report an electronic configuration scheme to rationally modulate surface electrostatic energies for crystallographic-selective growth of ZnO wires. The facets and orientations of ZnO wires are transformed between hexagonal and rectangular/diamond cross-sections with polar and non-polar growth directions, exhibiting different optical and piezoelectrical properties. Our novel synthetic route for ZnO wire fabrication provides new opportunities for future opto-electronics, piezoelectronics, and electronics, with new topological properties.

Radially dependent effective piezoelectric coefficient and enhanced piezoelectric potential due to geometrical stress confinement in ZnO nanowires/nanotubes

A theoretical model for the radially dependent effective piezoelectric coefficient and corresponding piezoelectric potential in intrinsic ZnO nanowires (NWs)/nanotubes (NTs) is presented. Substrate-bound ZnO structures oriented along the c-axis with diameters of 100–5000 nm (NWs) and inner diameters of 100–900 nm (NTs; fixed outer diameter, 1000 nm) were examined using finite element method analysis. The piezoelectric potential depended nonlinearly on the NT/NW size, which we explain using the effective piezoelectric coefficient and peak piezoelectric potentials. We propose that this coefficient can be used to judge the degree of enhancement of the piezoelectric potential in ZnO NWs/NTs.

Physisorbed-precursor-assisted atomic layer deposition of reliable ultrathin dielectric films on inert graphene surfaces for low-power electronics

Among the most fundamental challenges encountered in the successful incorporation of graphene in silicon-based electronics is the conformal growth of ultrathin dielectric films, especially those with thicknesses lower than 5 nm, on chemically inert graphene surfaces. Here, we present physisorbed-precursor-assisted atomic layer deposition (pALD) as an extremely robust method for fabricating such films. Using atomic-scale characterisation, it is confirmed that conformal and intact ultrathin Al2O3 films can be synthesised on graphene by pALD. The mechanism underlying the pALD process is identified through first-principles calculations based on density functional theory. Further, this novel deposition technique is used to fabricate two types of wafer-scale devices. It is found that the incorporation of a 5 nm-thick pALD Al2O3 gate dielectric film improves the performance of metal-oxide-graphene field-effect transistors to a greater extent than does the incorporation of a conventional ALD Al2O3 film. We also employ a 5 nm-thick pALD HfO2 film as a highly scalable dielectric layer with a capacitance equivalent oxide thickness of 1 nm in graphene-based tunnelling field-effect transistors fabricated on a glass wafer and achieve a subthreshold swing of 30 mV/dec. This significant improvement in switching allows for the low-voltage operation of an inverter within 0.5 V of both the drain and the gate voltages, thus paving the way for low-power electronics.

Electronic structure and switching behavior of the metastable silicene domain boundary

Silicene, a silicon allotrope with a buckled honeycomb lattice, has been extensively studied in the search for materials with graphene-like properties. Here, we study the domain boundaries of a silicene 4 × 4 superstructure on an Ag(111) surface at the atomic resolution using scanning tunneling microscopy (STM) and spectroscopy (STS) along with density functional theory calculations. The silicene domain boundaries (β-phases) are formed at the interface between misaligned domains (α-phases) and show a bias dependence, forming protrusions or depressions as the sample bias changes. In particular, the STM topographs of the silicene–substrate system at a bias of ∼2.0 V show brightly protruding domain boundaries, which can be explained by an energy state originating from the Si 3s and 3pz orbitals. In addition, the topographs depicting the vicinity of the domain boundaries show that the structure does not follow the buckled geometry of the atomic ball-and-stick model. Inside the domain, STS data showed a step-u...