Wonhee Ko

Nanoscale control of phonon excitations in graphene

Phonons, which are collective excitations in a lattice of atoms or molecules, play a major role in determining various physical properties of condensed matter, such as thermal and electrical conductivities. In particular, phonons in graphene interact strongly with electrons; however, unlike in usual metals, these interactions between phonons and massless Dirac fermions appear to mirror the rather complicated physics of those between light and relativistic electrons. Therefore, a fundamental understanding of the underlying physics through systematic studies of phonon interactions and excitations in graphene is crucial for realising graphene-based devices. In this study, we demonstrate that the local phonon properties of graphene can be controlled at the nanoscale by tuning the interaction strength between graphene and an underlying Pt substrate. Using scanning probe methods, we determine that the reduced interaction due to embedded Ar atoms facilitates electron–phonon excitations, further influencing phonon-assisted inelastic electron tunnelling.

Atomic and electronic structure of an alloyed topological insulator, Bi1.5Sb0.5Te1.7Se1.3.

Bi2−xSbxTe3−ySey has been argued to exhibit both topological surface states and insulating bulk states, but has not yet been studied with local probes on the atomic scale. Here we report on the atomic and electronic structures of Bi1.5Sb0.5Te1.7Se1.3 studied using scanning tunnelling microscopy (STM) and spectroscopy (STS). Although there is significant surface disorder due to alloying of constituent atoms, cleaved surfaces of the crystals present a well-ordered hexagonal lattice with 10 Å high quintuple layer steps. STS results reflect the band structure and indicate that the surface state and Fermi energy are both located inside the energy gap. In particular, quasi-particle interference patterns from electron scattering demonstrate that the surface states possess linear dispersion and chirality from spin texture, thus verifying its topological nature. This finding demonstrates that alloying is a promising route to achieve full suppression of bulk conduction in topological insulators whilst keeping the topological surface state intact.

Local potential fluctuation of topological surface states in Bi1.5Sb0.5Te1.7Se1.3 observed by Landau level spectroscopy

We report the local observation of the band structure of topological surface states in Bi1.5Sb0.5Te1.7Se1.3 using scanning tunneling microscopy/spectroscopy (STM/STS). The energy-momentum dispersion relation is locally deduced by extracting the Landau level (LL) energies, which are formed in a high magnetic field, from the STS data. Spatial variation of LLs revealed a shift of the Dirac point energy at the nanometer scale. The structure of the potential fluctuation was not correlated with the topography, which indicated that the Te/Se substitution did not induce the potential shift because of their same valence. The results show that disorders from the Te/Se substitution at the surface do not induce any localized charged states and do not affect topological surface states.

Electronic structure and switching behavior of the metastable silicene domain boundary

Silicene, a silicon allotrope with a buckled honeycomb lattice, has been extensively studied in the search for materials with graphene-like properties. Here, we study the domain boundaries of a silicene 4 × 4 superstructure on an Ag(111) surface at the atomic resolution using scanning tunneling microscopy (STM) and spectroscopy (STS) along with density functional theory calculations. The silicene domain boundaries (β-phases) are formed at the interface between misaligned domains (α-phases) and show a bias dependence, forming protrusions or depressions as the sample bias changes. In particular, the STM topographs of the silicene–substrate system at a bias of ∼2.0 V show brightly protruding domain boundaries, which can be explained by an energy state originating from the Si 3s and 3pz orbitals. In addition, the topographs depicting the vicinity of the domain boundaries show that the structure does not follow the buckled geometry of the atomic ball-and-stick model. Inside the domain, STS data showed a step-u...

Characterization of Edge Contact: Atomically Resolved Semiconductor–Metal Lateral Boundary in MoS2

Despite recent efforts for the development of transition-metal-dichalcogenide-based high-performance thin-film transistors, device performance has not improved much, mainly because of the high contact resistance at the interface between the 2D semiconductor and the metal electrode. Edge contact has been proposed for the fabrication of a high-quality electrical contact; however, the complete electronic properties for the contact resistance have not been elucidated in detail. Using the scanning tunneling microscopy/spectroscopy and scanning transmission electron microscopy techniques, the edge contact, as well as the lateral boundary between the 2D semiconducting layer and the metalized interfacial layer, are investigated, and their electronic properties and the energy band profile across the boundary are shown. The results demonstrate a possible mechanism for the formation of an ohmic contact in homojunctions of the transition-metal dichalcogenides semiconductor-metal layers and suggest a new device scheme utilizing the low-resistance edge contact.