Joanna Skiba-Szymanska

Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates

We report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth interface allows us to measure single dot emission linewidths of 80 µeV under non-resonant optical excitation, similar to that observed for self-assembled QDs. The dots reveal excitonic transitions confirmed by power dependence and fine structure splitting measurements. The emission wavelengths are stable, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of the re-growth interface.

Giant Stark effect in the emission of single semiconductor quantum dots

We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of 500 kV cm −1, leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions at the same energy.

On-chip generation and guiding of quantum light from a site-controlled quantum dot

We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Device scale arrays of quantum dots are formed by a two step regrowth process. We precisely locate the propagating region of a unidirectional photonic crystal waveguide with respect to the quantum dot nucleation site. Under pulsed optical excitation, the multiphoton emission probability from the exit of the waveguide is 12 \pm 5 % before any background correction. Our results are a major step towards the deterministic integration of a quantum emitter with the waveguiding components of photonic quantum circuits.

A quantum light-emitting diode for the standard telecom window around 1,550 nm.

Single photons and entangled photon pairs are a key resource of many quantum secure communication and quantum computation protocols, and non-Poissonian sources emitting in the low-loss wavelength region around 1,550 nm are essential for the development of fibre-based quantum network infrastructure. However, reaching this wavelength window has been challenging for semiconductor-based quantum light sources. Here we show that quantum dot devices based on indium phosphide are capable of electrically injected single photon emission in this wavelength region. Using the biexciton cascade mechanism, they also produce entangled photons with a fidelity of 87 ± 4%, sufficient for the application of one-way error correction protocols. The material system further allows for entangled photon generation up to an operating temperature of 93 K. Our quantum photon source can be directly integrated with existing long distance quantum communication and cryptography systems, and provides a promising material platform for developing future quantum network hardware.Quantum light sources operating at telecom wavelength are a long-sought goal for quantum technologies. Here, the authors show electrically injected emission of single photons and entangled photon pairs from indium phosphide based quantum dots, operating up to a temperature of 93 K.

Resonance fluorescence from a telecom-wavelength quantum dot

We report on resonance fluorescence from a single quantum dot emitting at telecom wavelengths. We perform high-resolution spectroscopy and observe the Mollow triplet in the Rabi regime—a hallmark of resonance fluorescence. The measured resonance-fluorescence spectra allow us to rule out pure dephasing as a significant decoherence mechanism in these quantum dots. Combined with numerical simulations, the experimental results provide robust characterisation of charge noise in the environment of the quantum dot. Resonant control of the quantum dot opens up new possibilities for the on-demand generation of indistinguishable single photons at telecom wavelengths as well as quantum optics experiments and direct manipulation of solid-state qubits in telecom-wavelength quantum dots.

In-plane emission of indistinguishable photons generated by an integrated quantum emitter

We demonstrate the emission of indistinguishable photons along a semiconductor chip originating from carrier recombination in an InAs quantum dot. The emitter is integrated in the waveguiding region of a photonic crystal structure, allowing for on-chip light propagation. We perform a Hong-Ou-Mandel-type of experiment with photons collected from the exit of the waveguide, and we observe two-photon interference under continuous wave excitation. Our results pave the way for the integration of quantum emitters in advanced photonic quantum circuits.

Universal Growth Scheme for Quantum Dots with Low Fine-Structure Splitting at Various Emission Wavelengths

Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fibre optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure-splitting (FSS) between exciton eigenstates. Moreover, QDs can be engineered to emit at standard telecom wavelengths. To achieve sufficient signal intensity for applications, QDs have been incorporated into 1D optical microcavities. However, combining these properties in a single device has so far proved elusive. Here, we introduce a growth strategy to realise QDs with small FSS in the conventional telecom band, and within an optical cavity. Our approach employs ‘dropletepitaxy’ of InAs quantum dots on (001) substrates. We show the scheme improves the symmetry of the dots by 72%. Furthermore, our technique is universal, and produces low FSS QDs by molecular beam epitaxy on GaAs emitting at ~900nm, and metal-organic vapour phase epitaxy on InP emitting at ~1550 nm, with mean FSS 4x smaller than for StranskiKrastanow QDs.

An entangled-LED-driven quantum relay over 1 km

Each datafile corresponds to a figure dataset in the paper. For figures 2c, 3, 4a & 4b the two time axes are given as the top row (X-values) and first column (Y-values). Data format for these is as follows: Y values accross columns and X values accross rows. In figure 4a, undefined fidelity points are indicated by value -0.5. For figures 3a, b, c & d, the two columns are separated as: e.g. figure3a_exp (for experimental data) and figure3a_sim (for simulated data).

Enhanced indistinguishability of in-plane single photons by resonance fluorescence on an integrated quantum dot

Integrated quantum light sources in photonic circuits are envisaged as the building blocks of future on-chip architectures for quantum logic operations. While semiconductor quantum dots have been proven to be the highly efficient emitters of quantum light, their interaction with the host material induces spectral decoherence, which decreases the indistinguishability of the emitted photons and limits their functionality. Here, we show that the indistinguishability of in-plane photons can be greatly enhanced by performing resonance fluorescence on a quantum dot coupled to a photonic crystal waveguide. We find that the resonant optical excitation of an exciton state induces an increase in the emitted single-photon coherence by a factor of 15. Two-photon interference experiments reveal a visibility of 0.80 ± 0.03, which is in good agreement with our theoretical model. Combined with the high in-plane light-injection efficiency of photonic crystal waveguides, our results pave the way for the use of this system for the on-chip generation and transmission of highly indistinguishable photons.

Quantum-dot-based telecommunication-wavelength quantum relay

© 2017 American Physical Society. The development of quantum relays for long-haul and attack-proof quantum communication networks operating with weak coherent laser pulses requires entangled photon sources at telecommunication wavelengths with intrinsic single-photon emission for most practical implementations. Using a semiconductor quantum dot emitting entangled photon pairs in the telecommunication O band, we demonstrate a quantum relay fulfilling both of these conditions. The system achieves a maximum fidelity of 94.5% for implementation of a standard four-state protocol with input states generated by a laser. We further investigate robustness against frequency detuning of the narrow-band input and perform process tomography of the teleporter, revealing operation for arbitrary pure input states, with an average gate fidelity of 83.6%. The results highlight the potential of semiconductor light sources for compact and robust quantum-relay technology that is compatible with existing communication infrastructures.