John E. Hubbs

High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices

A large format 1k×1k focal plane array (FPA) is realized using type-II superlattice photodiodes for long wavelength infrared detection. Material growth on a 3 in. GaSb substrate exhibits a 50% cutoff wavelength of 11 μm across the entire wafer. The FPA shows excellent imaging. Noise equivalent temperature differences of 23.6 mK at 81 K and 22.5 mK at 68 K are achieved with an integration time of 0.13 ms, a 300 K background and f/4 optics. We report a dark current density of 3.3×10−4 A cm−2 and differential resistance-area product at zero bias R0A of 166 Ω cm2 at 81 K, and 5.1×10−5 A cm−2 and 1286 Ω cm2, respectively, at 68 K. The quantum efficiency obtained is 78%.

Unpolarized calibration and nonuniformity correction for long-wave infrared microgrid imaging polarimeters

Recent developments for long-wave infrared (LWIR) imaging polarimeters include incorporating a microgrid polarizer array onto the focal plane array. Inherent advantages over other classes of polarimeters include rugged packaging, inherent alignment of the optomechanical system, and temporal synchronization that facilitates instantaneous acquisition of both thermal and polarimetric information. On the other hand, the pixel-to-pixel instantaneous field-of-view error that is inherent in the microgrid strategy leads to false polarization signatures. Because of this error, residual pixel-to-pixel variations in the gain-corrected responsivity, the noise-equivalent input, and variations in the pixel-to-pixel micropolarizer performance are extremely important. The degree of linear polarization is highly sensitive to these parameters and is consequently used as a metric to explore instrument sensitivities. We explore the unpolarized calibration issues associated with this class of LWIR polarimeters and discuss the resulting false polarization signature for thermally flat test scenes.

Evaluation and display of polarimetric image data using long-wave cooled microgrid focal plane arrays

Recent developments for Long Wave InfraRed (LWIR) imaging polarimeters include incorporating a microgrid polarizer array onto the focal plane array (FPA). Inherent advantages over typical polarimeters include packaging and instantaneous acquisition of thermal and polarimetric information. This allows for real time video of thermal and polarimetric products. The microgrid approach has inherent polarization measurement error due to the spatial sampling of a non-uniform scene, residual pixel to pixel variations in the gain corrected responsivity and in the noise equivalent input (NEI), and variations in the pixel to pixel micro-polarizer performance. The Degree of Linear Polarization (DoLP) is highly sensitive to these parameters and is consequently used as a metric to explore instrument sensitivities. Image processing and fusion techniques are used to take advantage of the inherent thermal and polarimetric sensing capability of this FPA, providing additional scene information in real time. Optimal operating conditions are employed to improve FPA uniformity and sensitivity. Data from two DRS Infrared Technologies, L.P. (DRS) microgrid polarizer HgCdTe FPAs are presented. One FPA resides in a liquid nitrogen (LN2) pour filled dewar with a 80°K nominal operating temperature. The other FPA resides in a cryogenic (cryo) dewar with a 60° K nominal operating temperature.

Measurement of the radiometric and polarization characteristics of a microgrid polarizer infrared focal plane array

Remote sensing applications make use of the optical polarization characteristics of a scene to enhance target detection and discrimination. Imaging polarimeters typically utilize polarizing arrays located in front of a focal plane array as a means of extracting polarization information from the optical scene. Over the last few years, technology development efforts have resulted in FPAs that integrate the polarizer with the infrared focal plane array (FPA). This paper will report on the radiometric and polarization characterization of a micro-grid polarizer FPA from DRS Infrared Technologies, L.P. (DRS). These measurements were performed to evaluate the radiometric performance and the polarization characteristics of the FPA.

Total ionizing dose and proton radiation characterization of Si P-i-N visible hybrid focal plane arrays

The results of total ionizing dose and proton fluence characterization of hybrid Si P-i-N focal plane arrays are reported. The focal plane arrays consist of a silicon P-i-N detector array bump bonded to 128 x 128 CMOS readout integrated circuit (ROIC). The FPAs were characterized in total ionizing dose and proton fluence radiation environments. Full radiometric characterizations were performed at each radiation dose level to determine the impact of the radiation on dark current, noise, responsivity, sensitivity, and dynamic range. Results from the total ionizing dose experiment demonstrate an unexpected increase in the visible P-i-N detector dark current. The median dark current increased more than two orders of magnitude from pre-radiation to 300 krad(Si) and the magnitude of the dark current was found to be a strong function of detector bias. No appreciable change in responsivity or noise was observed for wavelengths above 400 nm up to a total ionizing dose of 750 krad(Si). Results from the proton radiation experiment show no appreciable change in responsivity was observed up to a 63 MeV proton fluence of 3 x 1012 protons/cm2 (400 krad(Si) of total ionizing dose). The median dark current increased approximately two orders of magnitude, but even at this higher level, the dark current did not contribute significantly to the median noise at an integration time of 10 ms. The dominant degradation mechanism, in both the total ionizing dose and proton fluence environments, is an increase in dark current in the Si P-i-N detectors.

Distribution of Proton-Induced Transients in Silicon Focal Plane Arrays

Proton-induced energy deposition in a silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, including events resulting from multiple particles incident on a single pixel, to describe the experimental data accurately. Post-processing of Monte Carlo simulations is done to account for the effects of pile up (multiple hits on a single pixel during one integration time) and non-radiation-induced noise in experiment. The results are compared with experimental data, and demonstrate how direct ionization dominates the cross section, yet fluctuations in dE/dx cause a broad range of energy depositions not addressed by an average LET calculation. An event rate is predicted for a full space proton flux and the dominance of direct ionization is shown and compared to computation using constant LET methods in CREME96. This comparison shows that at lower energies, CREME96 sufficiently predicts the event rate, but at higher energies a high fidelity simulation method is needed to capture the distribution.

The Impact of Radiation Hardened By Design (RHBD) Techniques on the Performance of Readout Integrated Circuits In Radiation Environments

The tolerance of a hybrid array (HA) to total ionizing dose (TID) radiation continues to be a major performance consideration for space based imaging systems. In an effort to improve TID performance, HA manufacturers have begun to utilize circuit design techniques to enhance the TID tolerance of readout integrated circuits (ROICs). This paper will report on the radiometric and TID radiation characterizations of a HA that utilizes radiation-hardened-by-design (RHBD) techniques. This paper will not describe the design techniques used. Instead, characterization data are presented that demonstrate a HA TID tolerance of over 25 units of total ionizing dose (UTID). This result is compared with the performance of devices with ROICs processed at commercial foundries that do not make use of RHBD techniques. The HA described in this paper represents a state-of-the-art device; the ROIC was designed to be low noise, high gain, and radiation tolerant. While design techniques were utilized to enhance its TID hardness, no special fabrication processes were used.

Radiation effects characterization of infrared focal plane arrays using the Mosaic Array Test System

The Mosaic Array Test System (MATS) has been developed to perform radiation effects characterization of single-element infrared detectors, readout devices, and infrared flocal plane arrays (IRFPAs). MATS has been used to perform radiation effects characterization of low background IRFPAs in various radiation environments. In this paper, the authors describe the components and capabilities of the MATS and present representative data to demonstrate the testing capabilities of the MATS.

Pupil imaging with a high sensitivity, LWIR focal plane array

We describe an integrated sensor assembly serving as both a component technology demonstration and a potential means of detecting distant point sources of infrared radiation. The objective of the demonstration was to show that usefully long integration times could be achieved with a low-background and well capacity, LWIR focal plane array optimized for use with cooled optics in space. The system controls extraneous background radiation with a small (150 μm) cooled pinhole that nevertheless transmits all the radiation of a point source collected by the fore-optic. Broad waveband response (~3 to 12 μm) results from optimization of the fore-optic for both MW and LWIR, as well as from a broadband anti-reflection coating on the field lens that is used at the pinhole to reimage the entrance aperture and its surrounding cold stop. Integration times in excess of 10 msec have been achieved for room temperature backgrounds with the FPA cold stage operated at 50 Kelvin, and noise performance has been bracketed with single frames of data collected over several integration times and over several minutes duration. However, anomalous signal behavior has been observed as the temperature of a remote blackbody increases. Although operation to date has been with a lower operability, engineering grade FPA, plans are to eventually upgrade to a higher quality device.

Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays

The effects of materials surrounding the active devices on single event-induced charge generation in a proton-irradiated Si diode array are shown be significant. Particle scatters in layers underlying the device have an impact on the response of a focal plane array. This effect is likely to be important in a variety of semiconductor devices.