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Dive into the research topics where John F. Burch is active.

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Featured researches published by John F. Burch.


IEEE Transactions on Applied Superconductivity | 1992

High-T/sub c/ superconducting monolithic phase shifter

June H. Takemoto-Kobayashi; Charles M. Jackson; C.L. Pettiette-Hall; John F. Burch

A high temperature superconducting (HTS) X-band phase shifter using a distributed Josephson inductance (DJI) approach was designed and fabricated. Phase swings of over 60 degrees were measured at 65 K and below, with measurable phase shifts at temperatures above 77 K. High quality HTS films and superconducting quantum interference devices (SQUIDs) were deposited by laser ablation. A total of 40 HTS step edge SQUIDs were successfully integrated into a monolithic HTS circuit to produce a phase shifter in a resonant configuration. The magnitude of the Josephson inductance is calculated and a lumped element model is compared to measurements.<<ETX>>


Archive | 1990

Progress Towards a YBCO Circuit Process

Rentschler Simon; John F. Burch; K.P. Daly; W. D. Dozier; R. Hu; A. E. Lee; J. Luine; H. M. Manasevit; C. E. Platt; S. M. Schwarzbek; D. St. John; M. S. Wire; M. J. Zani

We report on progress in several key areas necessary for the establishment of a circuit process for high-temperature superconductive electronics (HTSE). These include superconductor films, compatible dielectric layers, metallic contacts, and Josephson devices. Among the topics we cover are the properties of in situ YBCO films, the use of LaA1O3 as a thin film dielectric material, and the properties of several types of engineered microbridge structures that exhibit Josephson-effect behavior in high-quality films because of the introduction of localized disruption in the films.


IEEE Transactions on Applied Superconductivity | 1995

YBCO step edge junctions on various substrates

C.L. Pettiette-Hall; J. Luine; J.M. Murduck; John F. Burch; R. Hu; M. Sergant; D. St. John

We have fabricated YBCO 90/spl deg/ grain boundary junctions on step edges in NdGaO/sub 3/ and in deposited dielectric (CeO/sub 2/ on YSZ and SrTiO/sub 3/ on MgO) in order to compare junction performance to our standard, LaAlO/sub 3/. Average I/sub c/R/sub n/ values at 77 K in the 300-400 /spl mu/V range were measured for 2 /spl mu/m step edge junctions on NdGaO/sub 3/, LaAlO/sub 3/, and SrTiO/sub 3//MgO. Junction I/sub c/ is greatly reduced with the CeO/sub 2//YSZ system. I/sub c/R/sub n/ values in the 300-400 /spl mu/V range were measured at 65 K for 4 /spl mu/m junctions.<<ETX>>


Integrated Ferroelectrics | 1994

Novel monolithic phase shifter combining ferroelectrics and high temperature superconductors

Charles M. Jackson; June H. Kobayashi; A. Z. Kain; Alfred E. Lee; C.L. Pettiette-Hall; John F. Burch; R. Hu; Rick Hilton

Abstract We describe a monolithic phase shifter which combines the low loss of high temperature superconductivity (HTS) with the variable dielectric properties of a ferroelectric material SrTiO3. Phase shifts greater than 28 degrees per wavelength were observed around 30 K. Benefits of the combination of HTS and ferroelectric materials are described. The compatibility of YBa2Cu3O7-x and other ferroelectric materials is discussed.


IEEE Transactions on Applied Superconductivity | 1993

Capacitively shunted, hysteretic YBa/sub 2/Cu/sub 3/O/sub 7/ step-edge junctions

K.P. Daly; John F. Burch; R. Hu; Alfred E. Lee; J. Luine; C.L. Pettiette-Hall

Hysteretic YBa/sub 2/Cu/sub 3/O/sub 7/ step-edge junctions on LaAlO/sub 3/ substrates have been fabricated by shunting intrinsically overdamped junctions with a monolithic capacitor. By comparing the I-V curves of junctions fabricated on the same substrate with and without capacitor counterelectrodes, the authors are confident that the observed hysteresis is due to the shunting capacitor. The capacitor consists of a dielectric layer (SrTiO/sub 3/ or LaAlO/sub 3/), deposited on the YBa/sub 2/Cu/sub 3/O/sub 7/ directly over the step-edge junction and an Ag counterelectrode. Capacitor counterelectrodes ranging in area from 10 mu m*30 mu m to 200 mu m*220 mu m have been investigated. Dielectric layers several tens of nanometers thick have been used. The inferred beta /sub c/ values are as large as 10 at 4 K and decrease with increasing temperature. At 65 K, beta /sub c/ of 1.3 was observed. The measured beta /sub c/ values are smaller than one would naively calculate. These differences are attributed to the usual limitations of lumped-element circuit analysis and resistive losses.<<ETX>>


IEEE Transactions on Applied Superconductivity | 1997

A low-inductance, low-I/sub c/ HTS junction process

J.M. Murduck; John F. Burch; R. Hu; C.L. Pettiette-Hall; J. Luine; S.M. Schwarzbek; M. Sergant; H.W. Chan

One of the challenges In fabricating digital circuitry with high temperature superconductors (HTS) is in developing a reliable junction process. The requirements of this junction process include: low-parasitic inductance, well-targeted and reproducible total inductance, uniformity in I/sub c/ and R/sub n/, and also well-targeted I/sub c/ and I/sub c/R/sub n/ product greater than 300 /spl mu/V at 65 K. Junction inductance can be greatly reduced by fabrication above a groundplane. Yet the addition of a groundplane introduces fabrication issues such as film smoothness and maintenance of epitaxy through the multiple layers necessary. Step-edge junctions and SNS edge junctions with groundplanes are examined and compared through a Taguchi experimental design series. Process equipment modifications in our HTS foundry necessary to reach our fabrication goals are outlined.


IEEE Transactions on Applied Superconductivity | 1993

Dielectric properties of SrTiO/sub 3/ thin films at low temperature

A.Z. Kain; C.L. Pettiette-Hall; K.P. Daly; Alfred E. Lee; R. Hu; John F. Burch

The authors have fabricated YBCO (or Ag)/SrTiO/sub 3//YBCO capacitors for low-frequency measurements and SrTiO/sub 3//YBCO/LaAlO/sub 3/ coplanar-waveguide end-coupled resonators for high-frequency measurements of the SrTiO/sub 3/ dielectric constant at low temperatures. From the capacitor measurements, values for the dielectric constant ranging from approximately 200 to 800 were obtained for films of various thicknesses. This behavior of the thin-film dielectric constant was found to differ from that of the bulk crystal.<<ETX>>


Journal of Superconductivity | 1992

Monolithic HTS microwave phase shifter and other devices

Charles M. Jackson; June H. Kobayashi; Emery B. Guillory; C.L. Pettiette-Hall; John F. Burch

We describe a monolithic high-temperature superconductor (HTS) phase shifter based on the distributed Josephson inductance (DJI) design integrated monolithically into a 10-GHz microstrip line. This microwave circuit incorporates >1000 HTS rf SQUIDS. Recent data demonstrate the performance of this broadband HTS circuit. We observed phase shifts greater than 150° in resonant structures, and 20° in broadband circuits. The nonlinear inductance of the superconducting transmission line can be used for other novel applications, including parametric amplification. A comparison of the DJI circuit to a series array of Josephson elements (used for pulse sharpening) will contrast these two new and exciting nonlinear transmission line circuits.


IEEE Transactions on Microwave Theory and Techniques | 1992

Monolithic high-T/sub c/ superconducting phase shifter at 10 GHz

June H. Takemoto-Kobayashi; Charles M. Jackson; Emery B. Guillory; C.L. Pettiette-Hall; John F. Burch

Describes a monolithic high-temperature superconductor (HTS) phase shifter integrated into a 10-GHz microstrip line. The HTS monolithic phase shifter uses over 2000 integrated (SQUID) (superconducting quantum interference device) devices per wavelength. Phase shifts of 20 degrees were observed in transmission line circuits, and phase shifts of greater than 190 degrees were observed in the resonant circuits. The high coupling limit is the best model for the circuit. This HTS phase shifter is suitable for integration into phased-array antenna systems for communications applications. >


Journal of Superconductivity | 1990

High-performance microwave circuits on LaAlO3

Charles M. Jackson; R. Hu; K. P. Daly; J. H. Takemoto; John F. Burch; R. W. Simon

Microwave properties of high-temperature films deposited on LaAlO3 substrate are presented. The films are grownin situ using a high-pressure single-source sputtering technique. Microwave resonators and filters are fabricated and tested. The maximum measuredQ values are 1400; the surface resistances were less than 360μΩ between 4.2 and 50 K. The filter performance was 18 dB better than a similar filter fabricated in Ag.

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Charles M. Jackson

Raytheon Space and Airborne Systems

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