Madhavi Chand

Superconducting properties and Hall effect of epitaxial NbN thin films

We have measured the magnetotransport properties and Hall effect of a series of epitaxial NbN films grown on (100) oriented single crystalline MgO substrate under different conditions using reactive magnetron sputtering. Hall effect measurements reveal that the carrier density in NbN thin films is sensitive to the growth condition. The carrier density increases by a factor of 3 between the film with highest normal state resistivity

Phase Fluctuations in a Strongly Disordered s -Wave NbN Superconductor Close to the Metal-Insulator Transition

({\ensuremath{\rho}}_{n}\ensuremath{\sim}3.83\text{ }\ensuremath{\mu}\ensuremath{\Omega}\text{ }\text{m})

The Higgs mode in disordered superconductors close to a quantum phase transition

and lowest transition temperature

Measurement of magnetic penetration depth and superconducting energy gap in very thin epitaxial NbN films

({T}_{c}\ensuremath{\sim}9.99\text{ }\text{K})

Role of the vortex-core energy on the Berezinskii-Kosterlitz-Thouless transition in thin films of NbN.

and the film with lowest normal state resistivity

Tunneling studies in a homogeneously disordered s-wave superconductor: NbN

({\ensuremath{\rho}}_{n}\ensuremath{\sim}0.94\text{ }\ensuremath{\mu}\ensuremath{\Omega}\text{ }\text{m})

Broadband parametric amplification with impedance engineering: Beyond the gain-bandwidth product

and highest transition temperature

Phase Diagram and Upper Critical Field of Homogeneously Disordered Epitaxial 3-Dimensional NbN Films

({T}_{c}\ensuremath{\sim}16.11\text{ }\text{K})

Temperature dependence of resistivity and Hall coefficient in strongly disordered NbN thin films

, while the mobility of carriers does not change significantly. Our results show that

A twofold quantum delayed-choice experiment in a superconducting circuit

{T}_{c}