John P. Mathew

Dynamical strong coupling and parametric amplification of mechanical modes of graphene drums

Mechanical resonators are ubiquitous in modern information technology. With the possibility of coupling them to electromagnetic and plasmonic modes, they hold promise as the key building blocks in future quantum information technology. Graphene-based resonators are of interest for technological applications due to their high resonant frequencies, multiple mechanical modes and low mass. The tension-mediated nonlinear coupling between various modes of the resonator can be excited in a controllable manner. Here we engineer a graphene resonator with large frequency tunability at low temperatures, resulting in a large intermodal coupling strength. We observe the emergence of new eigenmodes and amplification of the coupled modes using red and blue parametric excitation, respectively. We demonstrate that the dynamical intermodal coupling is tunable. A cooperativity of 60 between two resonant modes of ∼100 MHz is achieved in the strong coupling regime. The ability to dynamically control the coupling between the high-frequency eigenmodes of a mechanical system opens up the possibility of quantum mechanical experiments at low temperatures.

Carrier transport in high mobility InAs nanowire junctionless transistors.

The ability to understand and model the performance limits of nanowire transistors is the key to the design of next generation devices. Here, we report studies on high-mobility junctionless gate-all-around nanowire field effect transistor with carrier mobility reaching 2000 cm(2)/V·s at room temperature. Temperature-dependent transport measurements reveal activated transport at low temperatures due to surface donors, while at room temperature the transport shows a diffusive behavior. From the conductivity data, the extracted value of sound velocity in InAs nanowires is found to be an order less than the bulk. This low sound velocity is attributed to the extended crystal defects that ubiquitously appear in these nanowires. Analyzing the temperature-dependent mobility data, we identify the key scattering mechanisms limiting the carrier transport in these nanowires. Finally, using these scattering models, we perform drift-diffusion based transport simulations of a nanowire field-effect transistor and compare the device performances with experimental measurements. Our device modeling provides insight into performance limits of InAs nanowire transistors and can be used as a predictive methodology for nanowire-based integrated circuits.

Wide bandwidth nanowire electromechanics on insulating substrates at room temperature.

We study InAs nanowire resonators fabricated on sapphire substrate with a local gate configuration. The key advantage of using an insulating sapphire substrate is that it results in a reduced parasitic capacitance, thus allowing both wide bandwidth actuation and detection using a network analyzer as well as signal detection at room temperature. Both in-plane and out-of-plane vibrational modes of the nanowire can be driven and the nonlinear response of the resonators studied. In addition, this technique enables the study of variation of thermal strains due to heating in nanostructures.

Nanoscale Electromechanics To Measure Thermal Conductivity, Expansion, and Interfacial Losses

We study the effect of localized Joule heating on the mechanical properties of doubly clamped nanowires under tensile stress. Local heating results in systematic variation of the resonant frequency; these frequency changes result from thermal stresses that depend on temperature dependent thermal conductivity and expansion coefficient. The change in sign of the linear expansion coefficient of InAs is reflected in the resonant response of the system near a bath temperature of 20 K. Using finite element simulations to model the experimentally observed frequency shifts, we show that the thermal conductivity of a nanowire can be approximated in the 10-60 K temperature range by the empirical form κ = bT W/mK, where the value of b for a nanowire was found to be b = 0.035 W/mK(2), significantly lower than bulk values. Also, local heating allows us to independently vary the temperature of the nanowire relative to the clamping points pinned to the bath temperature. We suggest a loss mechanism (dissipation ~10(-4)-10(-5)) originating from the interfacial clamping losses between the metal and the semiconductor nanostructure.

Limits on the bolometric response of graphene due to flicker noise

We study the photoresponse of graphene field effect transistors using scanning photocurrent microscopy in near and far field configurations, and we find that the response of graphene under a source-drain bias voltage away from the contacts is dominated by the bolometric effect caused by laser induced heating. We find no significant change in the photocurrent with the optical modulation frequency upto 100 kHz. Although the magnitude of the bolometric current scales with bias voltage, it also results in noise. The frequency dependence of this noise indicates that it has a 1/f character, scales with the bias voltage and limits the detectable bolometric photoresponse at low optical powers.

Low tension graphene drums for electromechanical pressure sensing

We present a process to fabricate electromechanical pressure sensors using multilayer graphene in a sealed drum geometry. The drum resonators are fabricated on insulating sapphire substrates with a local back gate for direct radio frequency () actuation and detection of the mechanical modes. Using this scheme, we show the detection and electrostatic tuning of multiple resonant modes of the membrane up to 200 MHz. The geometry of the device also helps in attaining low tensile stress in the membrane, thereby giving high gate tunability (~1 MHz/V) of the resonator modes. We study the resonant frequency shifts in the presence of helium gas and demonstrate a sensing capability of 1 Torr pressure in a cryogenic environment.

Fabrication and characterization of GaN nanowire doubly clamped resonators

Gallium nitride (GaN) nanowires (NWs) have been intensely researched as building blocks for nanoscale electronic and photonic device applications; however, the mechanical properties of GaN nanostructures have not been explored in detail. The rigidity, thermal stability, and piezoelectric properties of GaN make it an interesting candidate for nano-electromechanical systems. We have fabricated doubly clamped GaN NW electromechanical resonators on sapphire using electron beam lithography and estimated the Youngs modulus of GaN from resonance frequency measurements. For wires of triangular cross section with side ∼90 nm, we obtained values for the Youngs modulus to be about 218 and 691 GPa, which are of the same order of magnitude as the values reported for bulk GaN. We also discuss the role of residual strain in the nanowire on the resonant frequency and the orientation dependence of the Youngs modulus in wurtzite crystals.

Light matter interaction in WS2 nanotube-graphene hybrid devices

We study the light matter interaction in WS2 nanotube-graphene hybrid devices. Using scanning photocurrent microscopy, we find that by engineering graphene electrodes for WS2 nanotubes we can improve the collection of photogenerated carriers. We observe inhomogeneous spatial photocurrent response with an external quantum efficiency of ∼1% at 0 V bias. We show that defects play an important role and can be utilized to enhance and tune photocarrier generation.

Tension mediated nonlinear coupling between orthogonal mechanical modes of nanowire resonators

Abstract We study the nonlinear coupling between orthogonal flexural modes of doubly clamped InAs nanowire resonators. The two orthogonal modes are formed by the symmetry breaking and lifting of degeneracy of the fundamental mode. The presence of a Duffing nonlinearity emerges when a mode is driven to large amplitudes. In this regime the modes are coupled due to the tension induced from the large amplitude of oscillations and is reflected in the hysteretic response of the mode that is not strongly driven. We study the driven-driven response of the mechanical modes to elucidate the role of nonlinear mode coupling in such mechanical resonators. The dynamics of the coupled modes studied here could prove useful in technological applications such as nanowire based vectorial force sensing.