Jon M. Hiller

Piezoelectric/ultrananocrystalline diamond heterostructures for high-performance multifunctional micro/nanoelectromechanical systems

Most current micro/nanoelectromechanical systems (MEMS/NEMS) are based on silicon. However, silicon exhibits relatively poor mechanical/tribological properties, compromising applications to some devices. Diamond films with superior mechanical/tribological properties provide an excellent alternative platform material. Ultrananocrystalline diamond (UNCD®) in film form with 2–5nm grains exhibits excellent properties for high-performance MEMS/NEMS devices. Concurrently, piezoelectric Pb(ZrxTi1−x)O3 (PZT) films provide high sensitivity/low electrical noise for sensing/high-force actuation at relatively low voltages. Therefore, integration of PZT and UNCD films provides a high-performance platform for advanced MEMS/NEMS devices. This letter describes the bases of such integration and demonstration of low voltage piezoactuated hybrid PZT/UNCD cantilevers.

Nickel antidot arrays on anodic alumina substrates.

Large-area nickel antidot arrays with a density up to 1010/cm2 have been fabricated by depositing nickel onto anodic aluminum oxide membranes that contain lattices of nanopores. Electron microscopy images show a high degree of order of the antidot arrays. Various sizes and shapes of the antidots were observed with increasing thickness of the deposited nickel. New features appear in the antidot arrays in both magnetization and transport measurements when the external magnetic field is parallel to the current direction, including an enhancement and a nonmonotonous field dependence of the magnetoresistance, larger values of the coercive field and remanence moment, and smaller saturation field.

Are Diamonds a MEMS' Best Friend?

Next-generation military and civilian communication systems will require technologies capable of handling data/ audio, and video simultaneously while supporting multiple RF systems operating in several different frequency bands from the MHz to the GHz range [1]. RF microelectromechani-cal/nanoelectromechanical (MEMS/NEMS) devices, such as resonators and switches, are attractive to industry as they offer a means by which performance can be greatly improved for wireless applications while at the same time potentially reducing overall size and weight as well as manufacturing costs.

Sectioning of multilayers to make a multilayer Laue lens

We report a process to fabricate multilayer Laue lenses (MLLs) by sectioning and thinning multilayer films. This method can produce a linear zone plate structure with a very large ratio of zone depth to width (e.g., >1000), orders of magnitude larger than can be attained with photolithography. Consequently, MLLs are advantageous for efficient nanofocusing of hard x rays. MLL structures prepared by the technique reported here have been tested at an x-ray energy of 19.5 keV, and a diffraction-limited performance was observed. The present article reports the fabrication techniques that were used to make the MLLs.

Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth

This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H2∕CH4 gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/CH4 chemistries, with pure diamond nanograins (3–5nm), but smoother surfaces (∼6nm rms) and higher growth rate (∼1μm∕h). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.

Enhanced Raman scattering from focused surface plasmons

Surface plasmon polaritons launched at concentric arcs can be focused into a subwavelength wide focal spot of high near-field light intensity. The focused plasmons give rise to enhanced Raman scattering from R6G molecules placed in the focal area. By exploiting the polarization dependence of the focusing the authors establish an enhancement of the Raman signal by a factor of ∼6. The results show that focusing of propagating surface plasmons on flat metal surfaces may be an alternative to localized plasmons on metal nanostructures for achieving enhanced Raman scattering. In particular, a flat metal substrate enables better control over the local electric fields and the placement of analyte molecules, and, therefore, ultimately better fidelity of Raman spectra.

Effect of pretreatment bias on the nucleation and growth mechanisms of ultrananocrystalline diamond films via bias-enhanced nucleation and growth: An approach to interfacial chemistry analysis via chemical bonding mapping

The effect of pretreatment bias on the nucleation and growth mechanisms of the ultrananocrystalline diamond (UNCD) films on the Si substrate via bias-enhanced nucleation and bias-enhanced growth (BEN-BEG) was investigated using cross-sectional high-resolution transmission electron microscopy, chemical bonding mapping, and Raman spectroscopy. The mirror-polished substrate surface showed the formation of a triangular profile produced by a dominant physical sputtering mechanism induced by ion bombardment of ions from the hydrogen plasma accelerated toward the substrate due to biasing and a potential hydrogen-induced chemical reaction component before synthesizing the UNCD films. The BEN-BEG UNCD films grown on the Si substrate with biased and unbiased pretreatments in the hydrogen plasma were compared. In the case of the bias-pretreated substrate, the SiC phases were formed at the peaks of the Si surface triangular profile due to the active unsaturated Si bond and the enhanced local electrical field. The UNC...

Materials science and integration bases for fabrication of (BaxSr1−x)TiO3 thin film capacitors with layered Cu-based electrodes

The synthesis and fundamental material properties of layered TiAl/Cu/Ta electrodes were investigated to achieve the integration of Cu electrodes with high-dielectric constant (κ) oxide thin films for application to the fabrication of high-frequency devices. The Ta layer is an excellent diffusion barrier to inhibit deleterious Cu diffusion into the Si substrate, while the TiAl layer provides an excellent barrier against oxygen diffusion into the Cu layer to inhibit Cu oxidation during the growth of the high-κ layer in an oxygen atmosphere. Polycrystalline (BaxSr1−x)TiO3 (BST) thin films were grown on the Cu-based bottom electrode by rf magnetron sputtering at temperatures in the range 400–600 °C in oxygen, to investigate the performance of BST/Cu-based capacitors. Characterization of the Cu-based layered structure using surface analytical methods showed that two amorphous oxide layers were formed on both sides of the TiAl barrier, such that the oxide layer on the free surface of the TiAl layer correlates w...

Magnetization reversal in arrays of individual and coupled Co-rings

The magnetization behavior of arrays on 10 μm Co rings has been studied using magnetometry, magneto-optical imaging, and Lorentz microscopy. Square arrays of individual rings and arrays of chains of interacting, touching rings have been investigated. In fields transverse to the chains the switching of the rings occurs always in pairs. This coupling introduces a broad distribution of switching fields and correspondingly a broad magnetization loop. Lorentz microscopy reveals that the switching for both, the isolated and the coupled rings, occurs through the formation of a buckled state, and the nucleation and propagation of a vortex domain wall.

X-ray nanotomography of SiO2-coated Pt90Ir10 tips with sub-micron conducting apex

Hard x-ray nanotomography provides an important three-dimensional view of insulator-coated “smart tips” that can be utilized for modern emerging scanning probe techniques. Tips, entirely coated by an insulating SiO2 film except at the very tip apex, are fabricated by means of electron beam physical vapor deposition, focused ion beam milling and ion beam-stimulated oxide growth. Although x-ray tomography studies confirm the structural integrity of the oxide film, transport measurements suggest the presence of defect-induced states in the SiO2 film. The development of insulator-coated tips can facilitate nanoscale analysis with electronic, chemical, and magnetic contrast by synchrotron-based scanning probe microscopy.