Jonathan D. Peters

Two-dimensional free-space beam steering with an optical phased array on silicon-on-insulator

We demonstrate a 16-channel, independently tuned waveguide surface grating optical phased array in silicon for two dimensional beam steering with a total field of view of 20° x 14°, beam width of 0.6° x 1.6°, and full-window background peak suppression of 10 dB.

Over 67 GHz bandwidth hybrid silicon electroabsorption modulator with asymmetric segmented electrode for 1.3 μm transmission

A distributed III-V-on-Si electroabsorption modulator based on an asymmetric segmented electrode has been developed on the hybrid silicon platform for the 1.3 μm transmission window. The measured modulation response shows a 2 dB drop at 67 GHz and an extrapolated 3 dB bandwidth of 74 GHz. Large signal measurements show clearly open eye diagrams at 50 Gb/s. An extinction ratio of 9.6 dB for back to back transmission and an extinction ratio of 9.4 dB after 16 km transmission were obtained with a drive voltage of 2.2 V.

50 Gb/s hybrid silicon traveling-wave electroabsorption modulator

We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits.

An Integrated Hybrid Silicon Multiwavelength AWG Laser

The first integrated multiwavelength laser based on an arrayed waveguide grating (AWG) fabricated on a silicon-on-insulator wafer is presented. It consists of Fabry-Perot cavities integrated with hybrid silicon amplifiers and an intracavity filter in the form of an AWG with a channel spacing of 360 GHz. Four-channel lasing operation is shown. Single-sided fiber-coupled output powers as high as 35 μW are measured. The device shows subnanosecond rise and fall times, and direct modulation at 1 GHz gives an open eye with an extinction ratio of 7.7 dB.

Integrated Microwave Photonic Filter on a Hybrid Silicon Platform

A hybrid silicon photonic integrated filter is proposed and demonstrated with a novel structure. This filter incorporates a ring resonator in one arm of a Mach-Zehnder interferometer making it possible to obtain a programmable filter response. The optical filter consists of a 5-mm-long delay loop made of low-loss silicon waveguides with integrated thermal modulators resulting in a 0.164-nm free spectral range with absolute phase tunability and gain elements that allow for the tuning of the filter factor. The microwave response of this integrated filter is measured and display tunability of 20 GHz.

Forty Gb/s hybrid silicon Mach-Zehnder modulator with low chirp

We demonstrate a hybrid silicon modulator operating up to 40 Gb/s with 11.4 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm and chirp of -0.75 over the entire bias range. As a switch, it has a switching time less than 20 ps.

Characterization of Insertion Loss and Back Reflection in Passive Hybrid Silicon Tapers

The optical properties of two hybrid silicon taper designs are investigated. These tapers convert the optical mode from a silicon waveguide to a hybrid silicon III/V waveguide. A passive chip was fabricated with an epitaxial layer similar to those used in hybrid silicon lasers. To separate optical scattering and mode mismatch from quantum-well absorption, the active layer in this paper was designed to be at 1410 nm, to allow measurements at 1550 nm. Using cutback structures, the taper loss and the taper reflection are quantified. Taper losses between 0.2 and 0.6 dB per taper and reflections below -41 dB are measured.

Design of phase-shifted hybrid silicon distributed feedback lasers

We present data on the design and performance analysis of phase shifted distributed feedback (DFB) lasers on the hybrid silicon platform. The lasing wavelength for various input currents and temperatures, for devices with standard quarter-wavelength, 60 μm and 120 μm-long phase shift are compared for mode stability and output power. The pros and cons of including a large phase shift region in the grating design are analyzed.

Energy-Efficient Hybrid Silicon Electroabsorption Modulator for 40-Gb/s 1-V Uncooled Operation

This letter demonstrates a high-speed and energy-efficient lumped electroabsorption modulator on the hybrid silicon platform for an uncooled operation at up to 80^°C . This 100-μm-long modulator has a 3-dB bandwidth of 30 GHz. Eye diagrams measured at the temperatures of 20^°C , 40^°C, 60 ^°C, and 80^°C with corresponding adjustment on the input wavelength and the bias voltage show a dynamic extinction ratio of around 5 dB at 40 Gb/s with a 1-V drive voltage swing and an energy consumption of 112 fJ/bit.

Integrated hybrid Si/InGaAs 50 Gb/s DQPSK receiver

A monolithic 25 Gbaud DQPSK receiver based on delay interferometers and balanced detection has been designed and fabricated on the hybrid Si/InGaAs platform. The integrated 30 µm long InGaAs p-i-n photodetectors have a responsivity of 0.64 A/W at 1550 nm and a 3dB bandwidth higher than 25 GHz. The delay interferometer shows a delay time of 39.2 ps and an extinction ratio higher than 20 dB. The demodulation of a 25 Gb/s DPSK signal by a single branch of the receiver demonstrates its correct working principle.