Jong-Moo Huh

70.1: Invited Paper: Large‐Sized Full Color AMOLED TV: Advancements and Issues

We have demonstrated a 40-inch diagonal, full color WXGA AMOLED TV. It was based on the technologies of amorphous silicon (a-Si) TFT backplane and white OLED with color filter. Despite of recent technology advancement enabling high color purity, large-sized AMOLED, a lot of problems to solve still exist to enter the large-sized display market. Here, Samsung will discuss how far the technologies need to go for the marketplace of large-sized display.

Reliable Characterization of Microcrystalline Silicon Films for Thin Film Transistor Applications

Despite many years of research on microcrystalline silicon films, these materials have not yet found industrial application as thin film transistors. We discuss difficulties in their accurate characterization and compare the advantages and disadvantages of commonly used characterization techniques. Our results show that no single technique provides a complete characterization of these films, and that a combination of techniques is required for a detailed and reliable picture of the film microstructure. Nevertheless, in the case of optimized films, most of the information on the film microstructure can be derived from spectroscopic ellipsometry alone.

New Fraction Time Annealing Method For Improving Organic Light Emitting Diode Current Stability of Hydorgenated Amorphous Silicon Thin-Film Transistor Based Active Matrix Organic Light Emitting Didode Backplane

We propose and fabricate a new hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) pixel employing a fraction time annealing (FTA), which can supply a negative gate bias during a fraction time of each frame rather than the entire whole frame, in order to improve the organic light emitting diode (OLED) current stability for an active matrix (AM) OLED. When an electrical bias for an initial reference current of 2 µA at 60 °C is applied to an FTA-driven pixel more than 100 h and the temperature is increased up to 60 °C rather than room temperature, the OLED current is reduced by 22% in the FTA-driven pixel, whereas it is reduced by 53% in a conventional pixel. The current stability of the proposed pixel is improved, because the applied negative bias can suppress the threshold voltage degradation of the a-Si:H TFT itself, which may be attributed to hole trapping into SiNx. The proposed fraction time annealing method can successfully suppress Vth shift of the a-Si:H TFT itself due to hole trapping into SiNx induced by negative gate bias annealing.

16.4: A 14.1″ WXGA Solution Processed OLED Display with a‐Si TFT

We have developed the worlds largest a-Si TFT based solution processed AMOLED full color display. In our 14.1″ WXGA demonstrator, we have realized the worlds best performance for solution-processed OLED materials in an active matrix display, while setting a higher standard for uniformity and image quality.