Jordana Blacksberg

A 1024

A 1024 × 8 time-gated, single-photon avalanche diode line sensor is presented for time-resolved laser Raman spectroscopy and laser-induced breakdown spectroscopy. Two different chip geometries were implemented and characterized. A type-I sensor has a maximum photon detection efficiency of 0.3% and median dark count rate of 80 Hz at 3 V of excess bias. A type-II sensor offers a maximum photon detection efficiency of 19.3% and a median dark count rate of 5.7 kHz at 3 V of excess bias. Both chips have 250-ps temporal resolution and fast gating capability, with a minimum gate width of 1.8 ns for type I and 0.7 ns for type II. Raman spectra were successfully observed from natural minerals, such as calcite and willemite. With the use of subnanosecond gating, background fluorescence was significantly reduced.

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We have used molecular beam epitaxy (MBE) based delta-doping technology to demonstrate nearly 100% internal quantum efficiency (QE) on silicon electron-multiplied charge-coupled devices (EMCCDs) for single photon counting detection applications. We used atomic layer deposition (ALD) for antireflection (AR) coatings and achieved atomic-scale control over the interfaces and thin film materials parameters. By combining the precision control of MBE and ALD, we have demonstrated more than 50% external QE in the far and near ultraviolet in megapixel arrays. We have demonstrated that other important device performance parameters such as dark current are unchanged after these processes. In this paper, we briefly review ultraviolet detection, report on these results, and briefly discuss the techniques and processes employed.

8, 700-ps Time-Gated SPAD Line Sensor for Planetary Surface Exploration With Laser Raman Spectroscopy and LIBS

We incorporate newly developed solid-state detector technology into time-resolved laser Raman spectroscopy, demonstrating the ability to distinguish spectra from Raman and fluorescence processes. As a proof of concept, we show fluorescence rejection on highly fluorescent mineral samples willemite and spodumene using a 128×128 single-photon avalanche diode (SPAD) array with a measured photon detection efficiency of 5%. The sensitivity achieved in this new instrument architecture is comparable to the sensitivity of a technically more complicated system using a traditional photocathode-based imager. By increasing the SPAD active area and improving coupling efficiency, we expect further improvements in sensitivity by over an order of magnitude. We discuss the relevance of these results to in situ planetary instruments, where size, weight, power, and radiation hardness are of prime concern. The potential large-scale manufacturability of silicon SPAD arrays makes them prime candidates for future portable and in situ Raman instruments spanning numerous applications where fluorescence interference is problematic.

Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

Planetary mineralogy can be revealed through a variety of remote sensing and in situ investigations that precede any plans for eventual sample return. We briefly review those techniques and focus on the capabilities for on-surface in situ examination of Mars, Venus, the Moon, asteroids, and other bodies. Over the past decade, Raman spectroscopy has continued to develop as a prime candidate for the next generation of in situ planetary instruments, as it provides definitive structural and compositional information of minerals in their natural geological context. Traditional continuous-wave Raman spectroscopy using a green laser suffers from fluorescence interference, which can be large (sometimes saturating the detector), particularly in altered minerals, which are of the greatest geophysical interest. Taking advantage of the fact that fluorescence occurs at a later time than the instantaneous Raman signal, we have developed a time-resolved Raman spectrometer that uses a streak camera and pulsed miniature microchip laser to provide picosecond time resolution. Our ability to observe the complete time evolution of Raman and fluorescence spectra in minerals makes this technique ideal for exploration of diverse planetary environments, some of which are expected to contain strong, if not overwhelming, fluorescence signatures. We discuss performance capability and present time-resolved pulsed Raman spectra collected from several highly fluorescent and Mars-relevant minerals. In particular, we have found that conventional Raman spectra from fine grained clays, sulfates, and phosphates exhibited large fluorescent signatures, but high quality spectra could be obtained using our time-resolved approach.

Fast single-photon avalanche diode arrays for laser Raman spectroscopy

We report on the development of coatings for a charged-coupled device (CCD) detector optimized for use in a fixed dispersion UV spectrograph. Because of the rapidly changing index of refraction of Si, single layer broadband antireflection (AR) coatings are not suitable to increase quantum efficiency at all wavelengths of interest. Instead, we describe a creative solution that provides excellent performance over UV wavelengths. We describe progress in the development of a coated CCD detector with theoretical quantum efficiencies (QEs) of greater than 60% at wavelengths from 120 to 300 nm. This high efficiency may be reached by coating a backside-illuminated, thinned, delta-doped CCD with a series of thin film AR coatings. The materials tested include MgF(2) (optimized for highest performance from 120-150 nm), SiO(2) (150-180 nm), Al(2)O(3) (180-240 nm), MgO (200-250 nm), and HfO(2) (240-300 nm). A variety of deposition techniques were tested and a selection of coatings that minimized reflectance on a Si test wafer were applied to functional devices. We also discuss future uses and improvements, including graded and multilayer coatings.

Time-resolved Raman spectroscopy for in situ planetary mineralogy

A low temperature process for Sb doping of silicon has been developed as a backsurface treatment for high-purity n-type imaging detectors. Molecular beam epitaxy (MBE) is used to achieve very high dopant incorporation in a thin, surface-confined layer. The growth temperature is kept below 450°C for compatibility with Al-metallized devices. Imaging with MBE-modified 1k×1k charge coupled devices (CCDs) operated in full depletion has been demonstrated. Dark current is comparable to the state-of-the-art process, which requires a high temperature step. Quantum efficiency is improved, especially in the UV, for thin doped layers placed closer to the backsurface. Near 100% internal quantum efficiency has been demonstrated in the ultraviolet for a CCD with a 1.5nm silicon cap layer.

Ultraviolet antireflection coatings for use in silicon detector design

We have demonstrated a back surface process for back-illuminated high-purity p-channel charge-coupled devices (CCDs), enabling broadband coverage from the ultraviolet to near infrared (NIR). The process consists of the formation of a delta layer followed by a double layer antireflection (AR) coating. The process is performed below 450degC and is applied to fully fabricated CCDs with aluminum metallization. The delta doping process was demonstrated on 1 k times 1 k and 2 k times 4 k CCDs, which were found to exhibit low dark current and near reflection-limited quantum efficiency. Two broadband AR coatings were developed to cover the UV-visible and visible-NIR bands. These coatings consist of a double layer of SixNy and SiOx deposited by plasma enhanced chemical vapor deposition onto the back surface of a delta doped CCD. The thicknesses of the coating layers are adjusted for the desired bandpass.

Enhanced quantum efficiency of high-purity silicon imaging detectors by ultralow temperature surface modification using Sb doping

Magnetometers are essential for scientific investigation of planetary bodies and are therefore ubiquitous on missions in space. Fluxgate and optically pumped atomic gas based magnetometers are typically flown because of their proven performance, reliability, and ability to adhere to the strict requirements associated with space missions. However, their complexity, size, and cost prevent their applicability in smaller missions involving cubesats. Conventional solid-state based magnetometers pose a viable solution, though many are prone to radiation damage and plagued with temperature instabilities. In this work, we report on the development of a new self-calibrating, solid-state based magnetometer which measures magnetic field induced changes in current within a SiC pn junction caused by the interaction of external magnetic fields with the atomic scale defects intrinsic to the semiconductor. Unlike heritage designs, the magnetometer does not require inductive sensing elements, high frequency radio, and/or optical circuitry and can be made significantly more compact and lightweight, thus enabling missions leveraging swarms of cubesats capable of science returns not possible with a single large-scale satellite. Additionally, the robustness of the SiC semiconductor allows for operation in extreme conditions such as the hot Venusian surface and the high radiation environment of the Jovian system.

Near-100% Quantum Efficiency of Delta Doped Large-Format UV-NIR Silicon Imagers

We present the results of a study of the response of a delta-doped charge-coupled device (CCD) exposed to ions with energies less than 10keV. The study of ions in the solar wind, the majority having energies in the 1–5keV range, has proven to be vital in understanding the solar atmosphere and the near Earth space environment. Delta-doped CCD technology has essentially removed the dead layer of the silicon detector. Using the delta-doped detector, we are able to detect H+ and N+ ions with energies ranging from 1to10keV in the laboratory. This is a remarkable improvement in the low energy detection threshold over conventional solid-state detectors, such as those used in space sensors, one example being the solar wind ion composition spectrometer (SWICS) on the Advanced Composition Explorer spacecraft, which can only detect ions with energies greater than 30keV because of the solid-state detector’s minimum energy threshold. Because this threshold is much higher than the average energy of the solar wind ions,...

Vectorized magnetometer for space applications using electrical readout of atomic scale defects in silicon carbide

Silicon carbide (SiC) is well known by the semiconductor industry to have significant potential for electronics used in high temperature environments due to its wide bandgap. It is not so well-known, however, that SiC also has great potential in the area of magnetic field sensing. Using the recently demonstrated zero-field spin dependent recombination (SDR) phenomenon that naturally arises in SiC based devices, near-zero magnetic field measurements can be made with moderately high sensitivity.