Josep Carreras

Polymer-Enhanced Stability of Inorganic Perovskite Nanocrystals and Their Application in Color Conversion LEDs.

Cesium lead halide (CsPbX3, X = Cl, Br, I) nanocrystals (NCs) offer exceptional optical properties for several potential applications but their implementation is hindered by a low chemical and structural stability and limited processability. In the present work, we developed a new method to efficiently coat CsPbX3 NCs, which resulted in their increased chemical and optical stability as well as processability. The method is based on the incorporation of poly(maleic anhydride-alt-1-octadecene) (PMA) into the synthesis of the perovskite NCs. The presence of PMA in the ligand shell stabilizes the NCs by tightening the ligand binding, limiting in this way the NC surface interaction with the surrounding media. We further show that these NCs can be embedded in self-standing silicone/glass plates as down-conversion filters for the fabrication of monochromatic green and white light emitting diodes (LEDs) with narrow bandwidths and appealing color characteristics.

Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates

We propose a light emitting transistor based on silicon nanocrystals provided with 200Mbits∕s built-in modulation. Suppression of electroluminescence from silicon nanocrystals embedded into the gate oxide of a field effect transistor is achieved by fast Auger quenching. In this process, a modulating drain signal causes heating of carriers in the channel and facilitates the charge injection into the nanocrystals. This excess of charge enables fast nonradiative processes that are used to obtain 100% modulation depths at modulating voltages of ∼1V.

Nanoscale electrical characterization of Si-nc based memory metal-oxide-semiconductor devices

In this work, standard and nanoscale experiments have been combined to investigate the electrical properties of metal-oxide-semiconductor (MOS) memory devices with silicon nanocrystals (Si-nc) embedded in the gate oxide. The nanometer scale analysis has been performed with a conductive atomic force microscope (C-AFM) which, thanks to its high lateral resolution, allows the study of areas of only few hundreds of nm2. Therefore, with this technique, a very reduced number of Si-nc can be investigated. We have studied the conduction mechanisms, the retention time, and the amount of charge stored in the Si-nc of these structures. The results have demonstrated that Si-nc enhance the gate oxide electrical conduction due to trap assisted tunneling. On the other hand, Si-nc can act as trapping sites. The amount of charge stored in Si-nc has been estimated through the change induced in the barrier height measured from the current-voltage (I-V) curves (at the nanoscale, with C-AFM) and from the flat band voltage shi...

Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition

An in-depth study of the physical and electrical properties of Si-nanocrystal-based MOSLEDs is presented. The active layers were fabricated with different concentrations of Si by both ion implantation and plasma-enhanced chemical vapour deposition. Devices fabricated by ion implantation exhibit a combination of direct current and field-effect luminescence under a bipolar pulsed excitation. The onset of the emission decreases with the Si excess from 6 to 3 V. The direct current emission is attributed to impact ionization and is associated with the reasonably high current levels observed in current-voltage measurements. This behaviour is in good agreement with transmission electron microscopy images that revealed a continuous and uniform Si nanocrystal distribution. The emission power efficiency is relatively low, approximately 10(-3)%, and the emission intensity exhibits fast degradation rates, as revealed from accelerated ageing experiments. Devices fabricated by chemical deposition only exhibit field-effect luminescence, whose onset decreases with the Si excess from 20 to 6 V. The absence of the continuous emission is explained by the observation of a 5 nm region free of nanocrystals, which strongly reduces the direct current through the gate. The main benefit of having this nanocrystal-free region is that tunnelling current flow assisted by nanocrystals is blocked by the SiO2 stack so that power consumption is strongly reduced, which in return increases the device power efficiency up to 0.1%. In addition, the accelerated ageing studies reveal a 50% degradation rate reduction as compared to implanted structures.

Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks

We report on a field-effect light emitting device based on silicon nanocrystals in silicon oxide deposited by plasma-enhanced chemical vapor deposition. The device shows high power efficiency and long lifetime. The power efficiency is enhanced up to ∼0.1% by the presence of a silicon nitride control layer. The leakage current reduction induced by this nitride buffer effectively increases the power efficiency two orders of magnitude with regard to similarly processed devices with solely oxide. In addition, the nitride cools down the electrons that reach the polycrystalline silicon gate lowering the formation of defects, which significantly reduces the device degradation.

Vanadate increases oxygen affinity and affects enzyme activities and membrane properties of erythrocytes

Abstract Incubation of blood with vanadate markedly increases the affinity of hemoglobin for oxygen, decreases the deformability of erythrocytes, reduces their osmotic fragility and alters their morphology, determining the appearance of equinocytic forms. Since vanadate is easily taken up by the erythrocytes and binds hemoglobin, these effects might result from interactions of vanadate with hemoglobin and with membrane proteins at the glycerate-2, 3-P 2 and/or ATP binding site. In addition, vanadate inhibits phosphoglycerate mutase, phosphoglucomutase and adenylate-kinase activities from hemolysates, suggesting a possible inhibitory effect on erythrocyte metabolism

White electroluminescence from C- and Si-rich thin silicon oxides

White electroluminescence from carbon- and silicon-rich silicon oxide layers is reported. The films were fabricated by Si and C ion implantation at low energy in 40nm thick SiO2, followed by annealing at 1100°C. Structural and optical studies allow assigning the electroluminescence to Si nanocrystals for the red part of the spectrum, and to C-related centers for the blue and green components. The external efficiency has been estimated to 10−4%. Electrical characteristics show a Fowler-Nordheim behavior for voltages above 25V, corresponding to the onset of electroluminescence. This suggests that light emission is related to the impact ionization of radiative centers.

Sequence of rat skeletal muscle phosphoglycerate mutase cDNA

A cDNA clone coding rat skeletal muscle phosphoglycerate mutase was isolated from a rat muscle lambda gt10 cDNA library and its sequence was determined. The deduced protein possesses 252 amino acids and is 94% homologous with respect to human muscle phosphoglycerate mutase. No amino acids changes occur at the active site and structural predictions suggest strong conformational homologies with other enzymes of the mutase family.

Distribution of phosphoglycerate mutase isozymes in rat, rabbit and human tissues☆

The distribution of phosphoglycerate mutase isozymes (types MM, MB and BB) in rat, rabbit and human tissues has been studied by electrophoresis on cellulose acetate and by highly-resolutive ion exchange chromatography. In the three species, muscle is the tissue with higher phosphoglycerate mutase activity. Heart is the only tissue with the three phosphoglycerate mutase isozymes in substantial amounts. Skeletal muscle contains mostly type MM isozyme and the other tissues possess almost exclusively type BB isozyme. Even in the presence of inhibitors, adenylate kinase can interfere with the staining reactions when large samples are analyzed and a long period of incubation is required.

Metal-nitride-oxide-semiconductor light-emitting devices for general lighting

The potential for application of silicon nitride-based light sources to general lighting is reported. The mechanism of current injection and transport in silicon nitride layers and silicon oxide tunnel layers is determined by electro-optical characterization of both bi- and tri-layers. It is shown that red luminescence is due to bipolar injection by direct tunneling, whereas Poole-Frenkel ionization is responsible for blue-green emission. The emission appears warm white to the eye, and the technology has potential for large-area lighting devices. A photometric study, including color rendering, color quality and luminous efficacy of radiation, measured under various AC excitation conditions, is given for a spectrum deemed promising for lighting. A correlated color temperature of 4800K was obtained using a 35% duty cycle of the AC excitation signal. Under these conditions, values for general color rendering index of 93 and luminous efficacy of radiation of 112 lm/W are demonstrated. This proof of concept demonstrates that mature silicon technology, which is extendable to low-cost, large-area lamps, can be used for general lighting purposes. Once the external quantum efficiency is improved to exceed 10%, this technique could be competitive with other energy-efficient solid-state lighting options.