Jun-Chul Kim

Interposer Power Distribution Network (PDN) Modeling Using a Segmentation Method for 3-D ICs With TSVs

In this paper, we propose models for large-sized silicon interposer power distribution networks (PDNs) and through silicon via (TSV)-based stacked grid-type PDNs using a segmentation method. We model the PDNs as distributed scalable resistance (R), inductance (L), conductance (G), and capacitance (C)-lumped models for an accurate estimation of the PDN impedance, including PDN inductance and wave phenomena such as the mode resonance at the high end of the frequency range. For this estimation, it is necessary to accurately model all transmission line (TL) sections that form the PDNs using a conformal mapping method and a phenomenological loss equivalence method (PEM). After modeling the individual TL sections, all the TL sections are connected based on a segmentation method, which is a matrix calculation method. The segmentation method accelerates the calculation speed for the PDN impedance estimation. The proposed models are successfully validated by simulations and measurements in the frequency range 0.1-20 GHz. Using the proposed models, we estimate and analyze the impedance curves of the interposer PDN and TSV-based stacked grid-type PDN with respect to the variations in the horizontal area of the interposer PDN and the number of power/ground TSVs in TSV-based stacked grid-type PDNs, respectively.

30 Gbps High-Speed Characterization and Channel Performance of Coaxial Through Silicon Via

Coaxial through silicon via (TSV) technique allows reduction of high frequency loss due to conductivity in silicon substrate and flexibility in impedance by controlling the ratio of shield to center radii. For the first time, we measured and analyzed the high-speed channel performance of coaxial TSV. This letter presents the measurement results of the fabricated test vehicle in S-parameter and eye-diagram. The eye-diagram measurement results prove that coaxial TSV is capable of supporting signal transmission up to bit rate of 30 Gbps. The equivalent circuit model is suggested and experimentally verified by S-parameter comparison. Furthermore, the superiority of coaxial TSV over conventional TSV is confirmed by comparison of S-parameter results from equivalent circuit model simulation.

A novel integrated dual-mode RF front-end module for Wi-Fi and bluetooth applications

In this paper, a novel integrated dual-mode RF FEM for Wireless Fidelity (Wi-Fi) and Bluetooth application is realized by low temperature co-fired ceramic (LTCC) technology. The proposed dual-mode RF FEM has 4 ports and consists of a novel selectable filter, which are fully embedded in the LTCC substrate, and 3 PIN diodes at each port except antenna port for shortening to the ground or not. This selectable filter structure can be applied for either Tx and Rx path for Wi-Fi or BT path by simply making two ports to be shorted to the ground. The fabricated dual-mode RF FEM has 7 pattern layers including 2 ground layers and it occupies less than 3.0 mm × 3.0 mm × 0.308 mm. It can be low-loss and low-cost solution by removing MMIC SP3T switch in series connection.

Raman spectroscopy of quantum paraelectric SrTiO3 fine particles

Abstract Size effects of quantum paraelectric SrTiO 3 particles were studied by Raman scattering. The particles were synthesized by a sol-gel method. The particle sizes were controlled by the firing temperatures and determined by the X-ray analysis to range from 12 to 44 nm in diameter. The soft mode frequencies of the smaller particles were higher than those of the larger particles in the low temperature. The soft mode behavior was conforming with dielectric results of the Lyddane-Sachs-Teller relation.

Noise Isolation in LTCC-Based X/Ku-Band Transceiver SiP Using Double-Stacked Electromagnetic Bandgap Structure

We experimentally investigate the isolation effect of the noise coupling in X/Ku-band transceiver SiP fabricated on low-temperature co-fired-ceramic (LTCC) multilayer substrate, using a double-stacked electromagnetic bandgap (DS-EBG) structure. The fabricated transceiver SiP is composed of Ku- band transmitter and X/Ku-band receiver. To prevent the simultaneous switching noise coupling from digital circuits, a DS-EBG structure was designed and implemented to the transceiver SiP. The effect of DS-EBG, which gives 30 dB stopband over X/Ku-band ranges, was demonstrated through frequency and time domain measurement.

A mobile TV/GPS module by embedding a GPS IC in printed-circuit-board

GPS and mobile TV are widely used in a lot of portable device, navigation, and mobile phone. As this solution, this paper presents a compact module for a mobile TV with GPS by using system-on-package (SoP) technology. In order to implement a slim and compact module, a GPS chip is embedded in printed-circuit-board (PCB) and a mobile TV IC and other components are mounted in PCB. This module is composed of a mobile TV IC, a GPS IC, a BPF, a crystal, regulators, shunt capacitors, series inductors, and a loop filter. This module uses lamination process and a GPS IC is embedded by using chip-first process. Polymer substrate consists of epoxy core as core substrate and ajimoto-bonding film (ABF) to bond each layer. Three times lamination and via drill/Cu plated are proposed. The dimension of a GPS IC is 3.5 mm × 3.2 mm × 0.32 mm. An IC is positioned in epoxy core. The thickness of epoxy cores, two kind of ABFs, 350 um, 40 um, and 20 um are applied, respectively. 0.6 mm thickness is obtained in this paper by embedding an IC. In order to check the performance and size for embedded modules, two representative modules for mobile TV/GPS with surface mounting technology (SMT) and with SoP technology are designed and compared. The size of module with SMT and SoP are as 16.5 mm × 11.5 mm × 1.1 mm and 13.5 mm × 12.5 mm × 1.1 mm, respectively. Almost 11 % size reduction is obtained by SoP. A presented module for a mobile TV/GPS was measured by DVB-TDMB test set and GPS program. Rx sensitivity of a mobile TV and a GPS is measured as -92 dBm and -162 dBm/Hz, respectively. Mobile broadcast and GPS information are well received and performed in commercial field. As a result, SoP technology was better than SMT technology in a view of size under good performance.

Embedded passive and active package using silicon substrate

In this paper, an embedded passive and active package is developed by using silicon substrates. Embedded passives are integrated on the silicon substrate or laminated organic using thin-film processes, and active devices are embedded in the silicon using cavity structures. Organic lamination processes are used for filling the gap between IC and silicon and also, it is possible to realize thick insulation layers. Due to thick laminated organics, it is possible to improve Q factors of spiral inductors. To demonstrate the process technology, two active ICs, a SPDT switch and LNA, are embedded in the silicon cavity depth of 160 µm and thin film MIM capacitors for DC blocking or impedance matching are integrated in the substrate. The size of implemented switch LNA module is 2.3×1.75×0.1 mm3. The measured insertion loss of the switch was 0.58 dB at 2.45 GHz and its application frequency is improved by 6 GHz due to low parasitic effect. The gain of the switch LNA module is 12 dB at the pass band.

Analysis of the Vertical Electromagnetic Bandgap Structures in the Power Distribution Network for the Multi-layer Printed Circuit Board

In this paper, we demonstrate the suppression of the power distribution network (PDN) impedance in multi-layer Printed Circuit Board (PCB) using Electromagnetic Bandgap (EBG) structure. We, first, analyze the resonances for measured PDN impedance from 8-pairs of power/ground planes by correlation to the 2.5-dimensional field simulation results. Then, we demonstrate and discuss the effect of the EBG structures which are vertically located between the power and ground planes to provide the low impedance within the designed stopband. By comparing the measurement result of the test vehicle with vertical EBG structure to that of the test vehicle without vertical EBG structure, it is shown that, within the EBG stopband, from 11 GHz to 21 GHz, the PDN self impedance, Zl1 of the multi-layer power/ground planes is successfully suppressed.

Miniaturization of electromagnetic bandgap structures for noise suppression

Advancement in semiconductor technologies including CMOS and SiGe is enabling the commercialisation of devices that have increased switching speed, reduced power supply and increased circuit complexity. Proliferation of high-speed systems in both digital and mixed-signal applications is also driving the need for advanced noise suppression techniques. This paper describes a novel approach of using miniaturized electromagnetic bandgap structures. By leveraging on low shrinkage composite ceramics technology to increase the dielectric loading of the EBG structures, we have achieved significant improvement in the bandwidth and start frequency of more than 30% and 90%, respectively, when compared with conventional approaches.

Co-process technology of the TSV and embedded IC for 3D heterogeneous IC integration

This paper presents a co-process technology of the through silicon via (TSV) and embedded IC for 3D heterogeneous IC integration. Heterogeneous ICs are embedded by using silicon cavities and advanced TSVs for 3D interconnection are integrated in the interposer at the same time. Organic lamination is used to fill the gap and make an insulation layer. A laser drilling process is used to make via interconnections of the inserted IC and through silicon via. The hole-size realized by using a laser machine is 70 μm. The co-processed TSV shows very low insertion losses owing to thick laminated organic. Its insertion loss is lower than 0.1 dB at 10 GHz. To demonstrate the interposer technology, a RF switch LNA module is designed and realized by using the interposer technology. Thin film passive devices are integrated on the silicon interposer and heterogeneous ICs such as a SPDT switch and LNA IC are embedded. The fabricated module thickness is only 180 μm and it is 3D stackable.