Jun-Pyo Lee

18.1: Distinguished Paper: Novel TFT‐LCD Technology for Motion Blur Reduction Using 120Hz Driving with McFi

Samsung has launched a 70-inch Full HD (1920×1080) LCD-TV panel which, on a commercial basis, is the worlds largest size so far. This size is the maximum that can be achieved using a single polarizer sheet. Its features include 600 nits luminance, dynamic control using LED local dimming, 100,000:1 contrast ratio, and a color gamut of 105%. Also, it is the worlds first high speed FHD 120Hz frame rate panel, accompanied by a newly developed pixel structure and driving scheme. This totally new driving method concept includes an alternative pixel structure developed from the 1G-2D cell structure that we announced last year. Also, new product and design technology, optimized for larger sized LCD-TV products, was adopted. This technology overcomes severe charging margin requirements, enabling manufacturability and high quality in Samsungs FHD line-up (40″, 46″, 52″, 57″, 70″).

Characteristics of SrTiO3 thin films deposited under various oxygen partial pressures

SrTiO3 thin films were deposited by rf-magnetron sputtering under various sputtering conditions followed by conventional furnace annealing at 600 and 700 °C. The amorphous SrTiO3 thin films crystallized into polycrystals at 600 °C. The leakage current of the SrTiO3 thin films decreased with increasing oxygen partial pressure in the sputtering gas. On the contrary, the dielectric constant increased with increasing the oxygen content in the sputtering gas. The leakage current and dielectric constant increased with increasing substrate temperature and post-annealing temperature. The ratio of Sr∶Ti approached 1∶1 with increasing oxygen content in the sputtering gas and substrate temperature during deposition. The oxygen content in the film decreased with increasing the substrate temperature. The capacitance-voltage (C-V) curves showed that the capacitance was nearly independent of the applied voltage. Scanning electron microscopy (SEM) micrographs showed that interdiffusion between the bottom electrode (Pt) and the buffer layer (Ti) occurred during post-annealing, but that the interface between SrTiO3 and Pt was stable.

49.1: RGB Gamma Curve Control for Improved LCD Color Performance

The technique presented in this paper maximizes LCD color performance by way of advanced gamma control technology. RGB gamma curve control is used to first establish accurate on-axis color, then two gamma curves corresponding to two sub-pixels are mixed to minimize gamma distortion off-axis. Independent RGB curve control for each sub-pixel improves the LCDs performance both on- and off-axis.

Characteristics of TiSi2 contact to BF2-doped single-silicon

The reaction mechanism of titanium silicide was investigated for varying amounts, of BF2 dopant on a Si-substrate. Titanium thin films were prepared by direct current sputtering on non-doped and BF2-implanted silicon wafers. The heat treatment temperatures, by rapid thermal annealing (RTA), were varied in the range 600–800 °C for 20 s. C49 TiSi2 forms at 700 °C and almost all of its phase is transformed into C54 TiSi2 with a very low resistivity value (16 μΩ cm) at 800 °C. When the amount of impurities is increased, the sheet resistance of Ti-silicides also increased while its thickness decreased. The main cause of the thickness reduction of Ti-silicide is the growth of enhanced native oxide. Dopants are chiefly redistributed in the interface between the Ti-silicide and the Si-substrate. It is believed that the formation of titanium boride increases the contact resistance during the Ti-silicide formation for samples annealed at 750 °C and 800 °C.

Enhancement of stress migration tolerance by in situ high temperature annealing

Good contact filling and improved resistance against stress migration (SM) of thin Al films are presented in this paper. Aluminum films were deposited at room temperature without substrate bias and then annealed in situ. The annealing was done at a temperature range of 400 °C∼550 °C in a vacuum‐isolated modular sputtering system. Open failure rate was evaluated in metal lines after baking at high temperatures for a long period of time (150 °C∼350 °C, 100 hrs∼1500 hrs). Void observation, impurity analysis, and stress measurement were carried out by using SEM and TEM, SIMS, and stress measurement system, respectively. The resistance against SM and against electromigration (EM) were found to be improved by annealing. These results may be attributed to grain growth during in situ anealing, leading to denser packing of Al atoms and fewer number of misfits between the grain boundaries.In conclusion, thin Al films after in situ annealing showed better contact filling and reliability.

Thermal stability of Al-1%Si-0.5%Cu/TiSi2 contact structure

Stable TiSi2 was formed by rapid thermal annealing (RTA) on single-crystal Si. Subsequently a 600 nm-thick Al-1%Si-0.5%Cu layer was deposited on the top of the formed TiSi2 followed by furnace annealing for 30 min at 400–600 ‡C in N2 ambient atmosphere. The thermal stability of Al-1%Si-0.5%Cu/TiSi2 bilayer and interfacial reaction were investigated by employing four-point probe, scanning electron microscopy (SEM) and Auger electron spectroscopy (AES). The composition and the phase of precipitates formed by the reaction of Al-1%Si-0.5%Cu with TiSi2 were studied by energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). It was found that the TiSi2 layer was consumed by the reaction between TiSi2 and Al-1%Si-0.5%Cu layer, resulting in precipitates at 550 ‡C. The results from EDS revealed that the precipitates were composed of Ti, Al and Si. The precipitates were identified as Ti7Al5Si12 ternary compound from XRD analysis.