Jw Jan-Willem Weber

Optical constants of graphene measured by spectroscopic ellipsometry

A mechanically exfoliated graphene flake ( ? 150×380??m2) on a silicon wafer with 98 nm silicon dioxide on top was scanned with a spectroscopic ellipsometer with a focused spot ( ? 100×55??m2) at an angle of 55°. The spectroscopic ellipsometric data were analyzed with an optical model in which the optical constants were parameterized by B-splines. This parameterization is the key for the simultaneous accurate determination of the optical constants in the wavelength range 210–1000 nm and the thickness of graphene, which was found to be 3.4 A.

B-spline parametrization of the dielectric function applied to spectroscopic ellipsometry on amorphous carbon

The remote plasma deposition of hydrogenated amorphous carbon (a-C:H) thin films is investigated by in situ spectroscopic ellipsometry (SE). The dielectric function of the a-C:H film is in this paper parametrized by means of B-splines. In contrast with the commonly used Tauc–Lorentz oscillator, B-splines are a purely mathematical description of the dielectric function. We will show that the B-spline parametrization, which requires no prior knowledge about the film or its interaction with light, is a fast and simple-to-apply method that accurately determines thickness, surface roughness, and the dielectric constants of hydrogenated amorphous carbon thin films. Analysis of the deposition process provides us with information about the high deposition rate, the nucleation stage, and the homogeneity in depth of the deposited film. Finally, we show that the B-spline parametrization can serve as a stepping stone to physics-based models, such as the Tauc–Lorentz oscillator.

Waveguide Nanowire Superconducting Single-Photon Detectors Fabricated on GaAs and the Study of Their Optical Properties

Quantum photonic integration is one of the leading approaches for enabling the implementation of quantum simulation and computing at the scale of tens to hundreds of photons. Quantum photonic integrated circuits require the monolithic integration of single-photon sources and passive circuit elements, such as waveguides and couplers, with single-photon detectors. A promising approach for on-chip single-photon detection is the use of superconducting nanowires on top of semiconductor waveguides. Here, we present state-of-the-art NbN films on GaAs for the realization of waveguide superconducting single-photon detectors, suitable for integration with sources and linear optical circuits. Based on the measured optical properties, we propose a new design which allows high absorptance for short nanowires in order to increase the integration density in a quantum photonic chip. Finally, we review recent results on integrated single-photon and photon-number-resolving detectors, and integrated autocorrelators.

Real time in situ spectroscopic ellipsometry of the growth and plasmonic properties of AU nanoparticles on SiO2

AbstractThe evolution of the film thickness and plasmonic properties for sputtered deposited Au nanoparticles on SiO2 layers have been monitored in real time using in situ spectroscopic ellipsometry in the photon energy range 0.75–4.1 eV. The spectroscopic ellipsometry data were analyzed with an optical model in which the optical constants for the Au nanoparticles were parameterized by B-splines which simultaneously provide an accurate determination of an effective thickness and an effective dielectric function. The effective thickness is interpreted with support of transmission and scanning electron microscopy and Rutherford backscattering measurements. Further parameterization of the optical constants by physical oscillators in the isolated spherical particle region allows the microstructural parameters such as size and Au fraction to be extracted. Real time in situ monitoring allows the growth of nanoparticles from the nucleation phase to near percolation to be followed, and there is a red-shift of the plasmon resonance absorption peak as the nanoparticles increase in size and their interaction becomes stronger.

Optical modeling of plasma-deposited ZnO films: Electron scattering at different length scales

In this work, an optical modeling study on electron scattering mechanisms in plasma-deposited ZnO layers is presented. Because various applications of ZnO films pose a limit on the electron carrier density due to its effect on the film transmittance, higher electron mobility values are generally preferred instead. Hence, insights into the electron scattering contributions affecting the carrier mobility are required. In optical models, the Drude oscillator is adopted to represent the free-electron contribution and the obtained optical mobility can be then correlated with the macroscopic material properties. However, the influence of scattering phenomena on the optical mobility depends on the considered range of photon energy. For example, the grain-boundary scattering is generally not probed by means of optical measurements and the ionized-impurity scattering contribution decreases toward higher photon energies. To understand this frequency dependence and quantify contributions from different scattering ph...

Microfocus infrared ellipsometry characterization of air-exposed graphene flakes

Graphene and ultrathin graphite flakes prepared by exfoliation were characterized by microfocus synchrotron infrared mapping ellipsometry. The dielectric function of graphene in a dry-air atmosphere is determined and compared to that of ultrathin graphite, bulk graphite, and gold. The imaginary part of graphene is revealed to be about an order of magnitude higher than that of graphite and comparable to that of gold. Comparing the conductivity to an optical model considering intraband transitions, we discuss the critical effects of environmental exposure, relevant for real-world applications.

An improved thin film approximation to accurately determine the optical conductivity of graphene from infrared transmittance

This work presents an improved thin film approximation to extract the optical conductivity from infrared transmittance in a simple yet accurate way. This approximation takes into account the incoherent reflections from the backside of the substrate. These reflections are shown to have a significant effect on the extracted optical conductivity and hence on derived parameters as carrier mobility and density. By excluding the backside reflections, the error for these parameters for typical chemical vapor deposited (CVD) graphene on a silicon substrate can be as high as 17% and 45% for the carrier mobility and density, respectively. For the mid- and near-infrared, the approximation can be simplified such that the real part of the optical conductivity is extracted without the need for a parameterization of the optical conductivity. This direct extraction is shown for Fourier transform infrared (FTIR) transmittance measurements of CVD graphene on silicon in the photon energy range of 370–7000 cm−1. From the real part of the optical conductivity, the carrier density, mobility, and number of graphene layers are determined but also residue, originating from the graphene transfer, is detected. FTIR transmittance analyzed with the improved thin film approximation is shown to be a non-invasive, easy, and accurate measurement and analysis method for assessing the quality of graphene and can be used for other 2-D materials.

Synergistic etch rates during low-energetic plasma etching of hydrogenated amorphous carbon

The etch mechanisms of hydrogenated amorphous carbon thin films in low-energetic (<2 eV) high flux plasmas are investigated with spectroscopic ellipsometry. The results indicate a synergistic effect for the etch rate between argon ions and atomic hydrogen, even at these extremely low kinetic energies. Ion-assisted chemical sputtering is the primary etch mechanism in both Ar/H2 and pure H2 plasmas, although a contribution of swift chemical sputtering to the total etch rate is not excluded. Furthermore, ions determine to a large extent the surface morphology during plasma etching. A high influx of ions enhances the etch rate and limits the surface roughness, whereas a low ion flux promotes graphitization and leads to a large surface roughness (up to 60 nm).

The effect of residual gas scattering on Ga ion beam patterning of graphene

The patterning of graphene by a 30 kV Ga+ focused ion beam (FIB) is studied by in-situ and ex-situ Raman spectroscopy. It is found that the graphene surrounding the patterned target area can be damaged at remarkably large distances of more than 10 μm. We show that scattering of the Ga ions in the residual gas of the vacuum system is the main cause of the large range of lateral damage, as the size and shape of the tail of the ion beam were strongly dependent on the system background pressure. The range of the damage was therefore greatly reduced by working at low pressures and limiting the total amount of ions used. This makes FIB patterning a feasible alternative to electron beam lithography as long as residual gas scattering is taken into account.

In-situ Raman spectroscopy to elucidate the influence of adsorption in graphene electrochemistry.

Electrochemistry on graphene is of particular interest due to graphene’s high surface area, high electrical conductivity and low interfacial capacitance. Because the graphene Fermi level can be probed by its strong Raman signal, information on the graphene doping can be obtained which in turn can provide information on adsorbed atoms or molecules. For this paper, the adsorption analysis was successfully performed using three electroactive substances with different electrode interaction mechanisms: hexaammineruthenium(III) chloride (RuHex), ferrocenemethanol (FcMeOH) and potassium ferricyanide/potassium ferrocyanide (Fe(CN)6). The adsorption state was probed by analysing the G-peak position in the measured in-situ Raman spectrum during electrochemical experiments. We conclude that electrochemical Raman spectroscopy on graphene is a valuable tool to obtain in-situ information on adsorbed species on graphene, isolated from the rest of the electrochemical behaviour.