K. Grodecki

Graphene Epitaxy by Chemical Vapor Deposition on SiC

We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed epitaxial graphene growth by Si sublimation that has been known for decades. (1) CVD growth is much less sensitive to SiC surface defects resulting in high electron mobilities of ∼1800 cm(2)/(V s) and enables the controlled synthesis of a determined number of graphene layers with a defined doping level. The high quality of graphene is evidenced by a unique combination of angle-resolved photoemission spectroscopy, Raman spectroscopy, transport measurements, scanning tunneling microscopy and ellipsometry. Our measurements indicate that CVD grown graphene is under less compressive strain than its epitaxial counterpart and confirms the existence of an electronic energy band gap. These features are essential for future applications of graphene electronics based on wafer scale graphene growth.

Mode-locking in Er-doped fiber laser based on mechanically exfoliated Sb 2 Te 3 saturable absorber

We demonstrate the usage of a new saturable absorber material – antimony telluride (Sb2Te3) for efficient mode-locking of an Erbium-doped fiber laser. The Sb2Te3 layers were obtained by mechanical exfoliation and transferred onto the fiber connector tip. The all-fiber laser was capable of generating optical solitons with the full width at half maximum of 1.8 nm centered at 1558.6 nm, with 4.75 MHz repetition rate. The pulse energy of the generated 1.8 ps pulses was at the level of 105 pJ.

Mode-locked erbium-doped fiber laser based on evanescent field interaction with Sb2Te3 topological insulator

In this Letter, we demonstrate a mode-locked Er-doped fiber laser incorporating antimony telluride (Sb2Te3) topological insulator (TI) as a saturable absorber (SA). The laser was capable of generating 270 fs-short soliton pulses at 1560 nm wavelength, which are the shortest solitons generated with a TI-based saturable absorber so far. In order to form a saturable absorber, a bulk piece of Sb2Te3 was deposited on a side-polished single-mode fiber with the presence of a low refractive index polymer. Such saturable absorber exhibits modulation depth at the level of 6% with less than 3 dB of non-saturable losses. Our study shows that TI-based saturable absorbers with evanescent field interaction might compete with SAs based on carbon nanomaterials, like graphene or nanotubes. Additionally, thanks to the interaction with the evanescent field, the material is not exposed to high optical power, which allows to avoid optical or thermal damage.

Transmission electron microscopy and scanning tunneling microscopy investigations of graphene on 4H-SiC(0001)

Transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and micro-Raman investigations of epitaxial graphene on 4H-SiC on-axis and 4° off-axis are presented. The STM images show that there is superimposed on 1×1 graphene pattern the carbon nanomesh of honeycomb 6×6 structure with the lattice vector of 17.5 A. The TEM results give evidence that the first carbon layer is separated by 2 A from the Si-terminated SiC surface and that subsequent carbon layers are spaced by 3.3 A. It is also found in TEM that the graphene layers cover atomic steps, present on 4° off-axis SiC(0001) surface, indicating a carpetlike growth mode. However, a bending of graphene planes on atomic steps of SiC apparently leads to generation of stress which leads to creation of edge dislocations in the graphene layers.

Er-Doped Fiber Laser Mode-Locked by CVD-Graphene Saturable Absorber

Erbium-doped fiber laser passively mode-locked by bilayer graphene is presented. The graphene layers were grown by chemical vapor deposition (CVD) on Cu substrate and transferred onto a fused silica window, forming a saturable absorber (SA). Low non-saturable losses and modulation depth as high as 55% allowed to achieve soliton pulses with over 11 nm bandwidth and nearly-transform limited 315 fs duration at 1564 nm center wavelength. The paper describes the design of the laser construction, as well as the graphene-SA preparation process. Our study demonstrates, that CVD-Cu graphene transferred on glass substrate may be used for efficient mode-locking of fiber lasers.

Transmission electron microscopy investigations of epitaxial graphene on C-terminated 4H–SiC

Transmission electron microscopy (TEM) investigations of epitaxial graphene, grown on on-axis and 8° off-axis C-terminated 4H–SiC (0001¯) surfaces are presented. The TEM results provide evidence that the first carbon layer is separated by 3.2 A from the C-terminated SiC surface. It was also found that thick graphene layers grown on on-axis SiC (0001¯) are loosely bound to the SiC substrate. Moreover, the structural observations reveal a certain degree of disorder between the graphene planes, which manifests itself in a rotation of the layers and in an increase in the interplanar spacing between certain carbon layers from 3.35 A, which is characteristic for graphite, up to 3.7 A. Graphene grown on 8° off-axis SiC (0001¯) substrates covers the steps of SiC and as a result disorder seems to be not as pronounced as it is on the on-axis SiC (0001¯) substrate.

Micro-Raman spectroscopy of graphene grown on stepped 4H-SiC (0001) surface

Graphene grown by chemical vapor deposition on 4H-SiC (0001) was studied using micro-Raman spectroscopy and atomic force microscopy (AFM). AFM revealed that the graphene structure grown on on-axis substrates has a stepped morphology. This is due to step bunching, which results from etching in hydrogen as well as from the process of graphene formation itself. It was shown by micro-Raman spectroscopy that the properties of graphene present on step edges and on terraces are quite different. Graphene on terraces is uniform with a relatively small thickness and strain fluctuations. On the other hand, graphene on step edges has a large thickness and strain variations occur. A careful analysis of micro-Raman spatial maps led us to the conclusion that the carrier concentration on step edge regions is lowered when compared with terrace regions.

Step-edge-induced resistance anisotropy in quasi-free-standing bilayer chemical vapor deposition graphene on SiC

which results in macro steps � 10 nm in height. In this report, we study the qualitative and quantitative effects of SiC steps edges on the resistance of epitaxial graphene grown by chemical vapor deposition. We experimentally determine the value of step edge resistivity in hydrogen-intercalated QFS-bilayer graphene to be � 190Xlm for step height hS ¼ 10 nm and provide proof that it cannot originate from mechanical deformation of graphene but is likely to arise from lowered carrier concentration in the step area. Our results are confronted with the previously reported values of the step edge resistivity in monolayer graphene over SiC atomic steps. In our analysis, we focus on large-scale, statistical properties to foster the scalable technology of industrial graphene for electronics and sensor applications. V C 2014 AIP Publishing LLC .[ http://dx.doi.org/10.1063/1.4896581]

Graphene films transfer using marker-frame method

In the present work, we demonstrated a new method of graphene films transferring applying a marker-frame instead of polymer-like films as a support. This method is an alternative that is much faster, cheaper and freely available to all. Our technique guarantees cleaner graphene surface and no polymer residues on it. Consequently, it significantly increases the applicability of graphene. For instance, one can think of using graphene as a component of nanocomposites or coupling it with other nanomaterials. As an example we showed graphene films suspended on GaN nanowires. The characterization of the properties of graphene transferred following the enhanced frame method was performed by Raman spectroscopy, as well as by carrying out SEM imaging and conducting TEM investigations.

Pinned and unpinned epitaxial graphene layers on SiC studied by Raman spectroscopy

The study of epitaxial graphene layers grown on SiC by two techniques, namely, the traditional Si sublimation method and the recent chemical vapor deposition (CVD) using temperature induced shift of the Raman 2D line, is presented. The measurements of thermal shift rate of 2D line on 4 H-SiC(0001) allowed us to determine notable differences in interaction of graphene with SiC substrate. The obtained results show that graphene layers grown by Si sublimation of 4 H-SiC(0001) are pinned strongly to the substrate. In contrast, the layers of graphene grown on 4 H-SiC(0001) substrates by CVD showed much weaker pinning. It was found that the film consisting of two or three graphene layers grown by CVD was already unpinned and thus showing Raman shift expected for freestanding graphene. The obtained differences in pinning of epitaxial graphene layers are explained in terms of basic growth mechanism differences between these two methods: graphene growth by Si sublimation is a “bottom-up” process and by CVD—a “top-...