Kang Lib Kim

Non-Volatile Ferroelectric Memory with Position-Addressable Polymer Semiconducting Nanowire

One-dimensional nanowires (NWs) have been extensively examined for numerous potential nano-electronic device applications such as transistors, sensors, memories, and photodetectors. The ferroelectric-gate field effect transistors (Fe-FETs) with semiconducting NWs in particular in combination with ferroelectric polymers as gate insulating layers have attracted great attention because of their potential in high density memory integration. However, most of the devices still suffer from low yield of devices mainly due to the ill-control of the location of NWs on a substrate. NWs randomly deposited on a substrate from solution-dispersed droplet made it extremely difficult to fabricate arrays of NW Fe-FETs. Moreover, rigid inorganic NWs were rarely applicable for flexible non-volatile memories. Here, we present the NW Fe-FETs with position-addressable polymer semiconducting NWs. Polymer NWs precisely controlled in both location and number between source and drain electrode were achieved by direct electrohydrodynamic NW printing. The polymer NW Fe-FETs with a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) exhibited non-volatile ON/OFF current margin at zero gate voltage of approximately 10(2) with time-dependent data retention and read/write endurance of more than 10(4) seconds and 10(2) cycles, respectively. Furthermore, our device showed characteristic bistable current hysteresis curves when being deformed with various bending radii and multiple bending cycles over 1000 times.

Highly Reliable Top-Gated Thin-Film Transistor Memory with Semiconducting, Tunneling, Charge-Trapping, and Blocking Layers All of Flexible Polymers

The core components of a floating-gate organic thin-film transistor nonvolatile memory (OTFT-NVM) include the semiconducting channel layer, tunneling layer, floating-gate layer, and blocking layer, besides three terminal electrodes. In this study, we demonstrated OTFT-NVMs with all four constituent layers made of polymers based on consecutive spin-coating. Ambipolar charges injected and trapped in a polymer electret charge-controlling layer upon gate program and erase field successfully allowed for reliable bistable channel current levels at zero gate voltage. We have observed that the memory performance, in particular the reliability of a device, significantly depends upon the thickness of both blocking and tunneling layers, and with an optimized layer thickness and materials selection, our device exhibits a memory window of 15.4 V, on/off current ratio of 2 × 10(4), read and write endurance cycles over 100, and time-dependent data retention of 10(8) s, even when fabricated on a mechanically flexible plastic substrate.

Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory.

Enhancing the device performance of organic memory devices while providing high optical transparency and mechanical flexibility requires an optimized combination of functional materials and smart device architecture design. However, it remains a great challenge to realize fully functional transparent and mechanically durable nonvolatile memory because of the limitations of conventional rigid, opaque metal electrodes. Here, we demonstrate ferroelectric nonvolatile memory devices that use graphene electrodes as the epitaxial growth substrate for crystalline poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) polymer. The strong crystallographic interaction between PVDF-TrFE and graphene results in the orientation of the crystals with distinct symmetry, which is favorable for polarization switching upon the electric field. The epitaxial growth of PVDF-TrFE on a graphene layer thus provides excellent ferroelectric performance with high remnant polarization in metal/ferroelectric polymer/metal devices. Furthermore, a fully transparent and flexible array of ferroelectric field effect transistors was successfully realized by adopting transparent poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] semiconducting polymer.

Micropatterned Pyramidal Ionic Gels for Sensing Broad-Range Pressures with High Sensitivity

The development of pressure sensors that are effective over a broad range of pressures is crucial for the future development of electronic skin applicable to the detection of a wide pressure range from acoustic wave to dynamic human motion. Here, we present flexible capacitive pressure sensors that incorporate micropatterned pyramidal ionic gels to enable ultrasensitive pressure detection. Our devices show superior pressure-sensing performance, with a broad sensing range from a few pascals up to 50 kPa, with fast response times of <20 ms and a low operating voltage of 0.25 V. Since high-dielectric-constant ionic gels were employed as constituent sensing materials, an unprecedented sensitivity of 41 kPa-1 in the low-pressure regime of <400 Pa could be realized in the context of a metal-insulator-metal platform. This broad-range capacitive pressure sensor allows for the efficient detection of pressure from a variety of sources, including sound waves, a lightweight object, jugular venous pulses, radial artery pulses, and human finger touch. This platform offers a simple, robust approach to low-cost, scalable device design, enabling practical applications of electronic skin.

Organic One-Transistor-Type Nonvolatile Memory Gated with Thin Ionic Liquid-Polymer Film for Low Voltage Operation

As one of the most emerging next-generation nonvolatile memories, one-transistor (1T)-type nonvolatile memories are of great attention due to their excellent memory performance and simple device architecture suitable for high density memory arrays. In particular, organic 1T-type memories containing both organic semiconductors and insulators are further beneficial because of their mechanical flexibility with low cost fabrication. Here, we demonstrate a new flexible organic 1T-type memory operating at low voltage. The low voltage operation of a memory less than 10 V was obtained by employing a polymer gate insulator solution blended with ionic liquid as a charge storage layer. Ionic liquid homogeneously dissolved in a thin poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film gave rise to low voltage operation of a device due to its high capacitance. Simultaneously, stable charge trapping of either anions or cations efficiently occurred in the polymer matrix, dependent upon gate bias. Optimization of ionic liquid in PVDF-TrFE thus led to an air-stable and mechanically flexible organic 1T-type nonvolatile memory operating at programming voltage of ±7 V with large ON/OFF current margin of approximately 10(3), reliable time-dependent data retention of more than 10(4) seconds, and write/read endurance cycles of 80.

Printable and Rewritable Full Block Copolymer Structural Color

Structural colors (SCs) of photonic crystals (PCs) arise from selective constructive interference of incident light. Here, an ink-jet printable and rewritable block copolymer (BCP) SC display is demonstrated, which can be quickly written and erased over 50 times with resolution nearly equivalent to that obtained with a commercial office ink-jet printer. Moreover, the writing process employs an easily modified printer for position- and concentration-controlled deposition of a single, colorless, water-based ink containing a reversible crosslinking agent, ammonium persulfate. Deposition of the ink onto a self-assembled BCP PC film comprising a 1D stack of alternating layers enables differential swelling of the written BCP film and produces a full-colored SC display of characters and images. Furthermore, the information can be readily erased and the system can be reset by application of hydrogen bromide. Subsequently, new information can be rewritten, resulting in a chemically rewritable BCP SC display.

A field-induced hole generation layer for high performance alternating current polymer electroluminescence and its application to extremely flexible devices

The performance of alternating current driven electroluminescent devices significantly depends on the total amount of injected carriers as well as the balance of the number of injected carriers in an emission layer, which requires a careful design of the relative energy level structures of constituent layers. Here, we demonstrate a new field-induced hole generation layer between an emission layer and an insulator for high performance alternating current polymer electroluminescence (AC-PEL). Our hole generation layer of doped poly(3,4-ethylenedioxythiophene)–poly(styrene sulfonate) in the presence of multi-walled carbon nanotubes was also able to supply sufficient holes, giving rise to a good balance with the number of electrons readily injected from a top electrode. The resulting AC-PEL device exhibits high electroluminescence performance with a low turn-on root-mean-square voltage of 8.8 Vrms, a maximum luminance of 40 919 cd m−2, a maximum current efficiency of 3.74 cd A−1 and a power efficiency of 3.25 lm W−1. Other buffer layers such as WO3 and MoO3 are also suitable as field-induced hole generation layers. Moreover, our hole generation layer enables us to develop an extremely flexible and even foldable AC-PEL device when combined with a polymer insulator as well as a flexible transparent electrode based on the Ag nanowire network.

Flexible Nonvolatile Transistor Memory with Solution-Processed Transition Metal Dichalcogenides

Nonvolatile field-effect transistor (FET) memories containing transition metal dichalcogenide (TMD) nanosheets have been recently developed with great interest by utilizing some of the intriguing photoelectronic properties of TMDs. The TMD nanosheets are, however, employed as semiconducting channels in most of the memories, and only a few works address their function as floating gates. Here, a floating-gate organic-FET memory with an all-in-one floating-gate/tunneling layer of the solution-processed TMD nanosheets is demonstrated. Molybdenum disulfide (MoS2 ) is efficiently liquid-exfoliated by amine-terminated polystyrene with a controlled amount of MoS2 nanosheets in an all-in-one floating-gate/tunneling layer, allowing for systematic investigation of concentration-dependent charge-trapping and detrapping properties of MoS2 nanosheets. At an optimized condition, the nonvolatile memory exhibits memory performances with an ON/OFF ratio greater than 104 , a program/erase endurance cycle over 400 times, and data retention longer than 7 × 103 s. All-in-one floating-gate/tunneling layers containing molybdenum diselenide and tungsten disulfide are also developed. Furthermore, a mechanically-flexible TMD memory on a plastic substrate shows a performance comparable with that on a hard substrate, and the memory properties are rarely altered after outer-bending events over 500 times at the bending radius of 4.0 mm.

Solution-processed electron-only tandem polymer light-emitting diodes for broad wavelength light emission

Polymer light-emitting diodes (PLEDs) have been of great interest for flexible mobile displays and large area solid-state lighting due to the possibility of achieving low production costs using solution processes combined with various printing technologies. Although monochromatic operation of PLEDs with high luminous efficiency and device stability has been achieved using numerous strategies, the development of color-tunable PLEDs capable of emitting a broad range of light upon the application of external stimuli still remains challenging. Here, we present a solution-processed broad range color-tunable tandem PLED of inverted and regular light emitting units (LEUs) stacked in series sharing a floating polymer electrode as a charge injection layer between two LEUs. Fine and broad wavelength color control from pure blue to pure orange is achieved when an AC field is applied with different positive-to-negative polarity heights in our tandem PLED. Our AC-driven tandem PLEDs offer a facile route to color-tunable polymer EL devices with a maximum current efficiency (CE) and luminance of 2.5 cd A−1 and 1300 cd m−2 for blue emission under DC reverse and 6.7 cd A−1 and 6000 cd m−2 for orange emission under DC forward as well as 3.1 cd A−1 and 6000 cd m−2 for white emission under AC, respectively.

Epitaxially Grown Ferroelectric PVDF-TrFE Film on Shape-Tailored Semiconducting Rubrene Single Crystal

Epitaxial crystallization of thin poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) films is important for the full utilization of their ferroelectric properties. Epitaxy can offer a route for maximizing the degree of crystallinity with the effective orientation of the crystals with respect to the electric field. Despite various approaches for the epitaxial control of the crystalline structure of PVDF-TrFE, its epitaxy on a semiconductor is yet to be accomplished. Herein, the epitaxial growth of PVDF-TrFE crystals on a single-crystalline organic semiconductor rubrene grown via physical vapor deposition is presented. The epitaxy results in polymer crystals globally ordered with specific crystal orientations dictated by the epitaxial relation between the polymer and rubrene crystal. The lattice matching between the c-axis of PVDF-TrFE crystals and the (210) plane of orthorhombic rubrene crystals develops two degenerate crystal orientations of the PVDF-TrFE crystalline lamellae aligned nearly perpendicular to each other. Thin PVDF-TrFE films with epitaxially grown crystals are incorporated into metal/ferroelectric polymer/metal and metal/ferroelectric polymer/semiconductor/metal capacitors, which exhibit excellent nonvolatile polarization and capacitance behavior, respectively. Furthermore, combined with a printing technique for micropatterning rubrene single crystals, the epitaxy of a PVDF-TrFE film is formed selectively on the patterned rubrene with characteristic epitaxial crystal orientation over a large area.