Kaori Umezawa

Direct Observation of Single Bubble Cavitation Damage for MHz Cleaning

It is well known that the physical force cleaning such as megasonic (MS) and ultrasonic (US) cleaning are used in FEOL (front-end-of-line) and BEOL (back-end-of-line). Recently, with scaling down below 43 nm, the influence of pattern damage by physical force methods such as MS and US irradiation has been reported. Hence, for the 2x and 3x nm node devices, it will be very difficult to apply MS cleaning for particle removal process without understanding the cavitation force. Cavitation is a complex phenomena based on bubble formation and explosion in the liquid. To control “MS cleaning” and “cavitation” induced pattern damage, many studies using “Sonoluminescence” have been reported. This method is able to demonstrate the existence of high energy fields such as cavitation throughout the megasonic field. The damage clustering distribution was investigated for the damage size and damage length in batch MS conditions using gate structure patterned [1]. In this method, it is difficult to discuss the cavitation force, quantitatively. And this method can not obtain the quantitative physical force on the wafer surface, directly. To understand “cavitation force” induced pattern damage, the observation of “cavitation force” is highlighted with “imaging films” such as blanket aluminum film and resist film, directly.

The origin of extended dislocations induced by high-dose ion implantation

The origin and the generation mechanism of ion implantation-induced dislocations is investigated with an Si/sub 3/N/sub 4/ band line/space pattern. The Si/sub 3/N/sub 4/ film-edge stress not only causes dislocation propagation but also causes the formation and deformation of extended dislocations at the initial stage of annealing. The behavior is clarified that the dislocation loops are deformed into pattern-edge dislocation half loops, which accumulate at the film edge and are punched out from the edge.

Particle Retention Mechanism of Filter in High Temperature Chemical

Recently, the control of particles measured in the tens of nanometers has become indispensable for manufacturing semiconductor devices. In sulfuric acid - hydrogen peroxide mixture (SPM) processes, it is increasingly important to reduce particles on the wafer. A batch type re-circulation bath has been generally used with a fluoroplastic filter built into the equipment. The pore size of the filter used has gradually become smaller. The particle levels on the wafer have decreased after the filter was changed from a 100nm rating to a 30nm rating.