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Dive into the research topics where Katsuya Kosaki is active.

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Featured researches published by Katsuya Kosaki.


IEEE Transactions on Electron Devices | 1995

1 W Ku-band AlGaAs/GaAs power HBT's with 72% peak power-added efficiency

Teruyuki Shimura; Masayuki Sakai; S. Izumi; Hirofumi Nakano; H. Matsuoka; Akira Inoue; J. Udomoto; Katsuya Kosaki; T. Kuragaki; H. Takano; T. Sonoda; S. Takamiya

High power and high-efficiency multi-finger heterojunction bipolar transistors (HBTs) have been successfully realized at Ku-band by using an optimum emitter ballasting resistor and a plated heat sink (PHS) structure. Output power of 1 W with power-added efficiency (PAE) of 72% at 12 GHz has been achieved from a 10-finger HBT with the total emitter size of 300 /spl mu/m/sup 2/. 72% PAE with the output power density of 5.0 W/mm is the best performance ever reported for solid-state power devices with output powers more than 1 W at Ku-band. >


Archive | 1994

Apparatus and method of electroplating

Katsuya Kosaki


Archive | 1991

Method for manufacturing semiconductor device contact

Katsuya Kosaki


Archive | 1997

Apparatus for electroplating a semiconductor substrate

Masahiro Tamaki; Katsuya Kosaki


Archive | 2000

Method of plating semiconductor wafer and plated semiconductor wafer

Katsuya Kosaki; Masahiro Tamaki


Archive | 1994

Semiconductor device structure with plated heat sink and supporting substrate

Katsuya Kosaki


IEEE Transactions on Electron Devices | 1994

A high-power GaAs FET having buried plated heat sink for high-performance MMIC's

Takahide Ishikawa; Kazuhiro Okaniwa; M. Komaru; Katsuya Kosaki; Yasuo Mitsui


Archive | 1999

Semiconductor device with plated heat sink

Katsuya Kosaki


Archive | 1996

Apparatus for adhering wafer to supporting substrate

Katsuya Kosaki; Takeshi Kuragaki


Archive | 1997

Plating apparatus for plating a wafer

Katsuya Kosaki; Masahiro Tamaki

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