Katsuyuki Horita

Method for manufacturing an isolation trench having plural profile angles

Isolation trench having plural profile angles

Trench type element isolation structure

Semiconductor device and method of fabricating thereof

Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same

Semiconductor device with element isolation using impurity-doped insulator and oxynitride film

Method for forming a trench type element isolation structure and trench type element isolation structure

Semiconductor device having LDD structure with a recess in the source/drain region which is formed during the removal of a damaged layer

Method of manufacturing a semiconductor device having an LDD structure with a recess in the source/drain region formed during removal of a damaged layer

Semiconductor component manufacture method