Kazuhiro Ikuina

1.25 Gbps wireless Gigabit ethernet link at 60 GHz-band

A 1.25 Gbps 60 GHz-band full duplex wireless Gigabit Ethernet link has been developed. Direct ASK modulation and demodulation scheme is adopted for the 60 GHz-band transceiver. CPW MMICs and planar filters are flip-chip mounted in TX and RX LTCC MCMs. The wireless Gigabit Ethernet link has the function of converting an optical fiber link to a wireless link seamlessly combining a 60 GHz-band transceiver with a 1000Base-SX optical in/out module. The size is 159/spl times/97/spl times/44 mm/sup 3/.

A 60 GHz-band planar dielectric waveguide filter for flip-chip modules

A planar dielectric waveguide filter with CPW I/O ports suitable for flip-chip bonding is proposed and demonstrated for 60 GHz-band applications. The filter is formed incorporating via holes in an alumina substrate. In order to improve a stop-band rejection, short-circuited CPW resonators with half wavelength are added to waveguide-to-CPW transitions. A fabricated 4-resonator filter exhibits an insertion loss of 2.8 dB with a 3 dB-bandwidth of 3.0 GHz and a rejection of 35 dB at a 3 GHz-lower-separation from a center frequency of 58.5 GHz. The filter is successfully mounted in a multi-layer ceramic package using flip-chip bonding.

A 60-GHz-band planar dielectric waveguide filter for flip-chip modules

A planar dielectric waveguide filter with CPW I/O ports suitable for flip-chip bonding is proposed and demonstrated for 60 GHz-band applications. The filter is formed incorporating via holes in an alumina substrate. In order to improve a stop-band rejection, short-circuited CPW resonators with half wavelength are added to waveguide-to-CPW transitions. A fabricated 4-resonator filter exhibits an insertion loss of 2.8 dB with a 3 dB-bandwidth of 3.0 GHz and a rejection of 35 dB at a 3 GHz-lower-separation from a center frequency of 58.5 GHz. The filter is successfully mounted in a multi-layer ceramic package using flip-chip bonding.

Low cost multi-layer ceramic package for flip-chip MMIC up to W-band

We have developed a low cost multi-layer low temperature co-fired ceramic (LTCC) package based on a mass production design rule for an MMIC up to W-band. The package structure includes a cavity for the flip-chip MMIC and coplanar feed-throughs improved to suppress radiation. Good small-signal characteristics of a 76 GHz-band amplifier mounted on the package are demonstrated.

60GHz-Band Flip-Chip MMIC Modules for IEEE1394 Wireless Adapters

60GHz-band 500-Mpbs transmitter and receiver multi-chip modules (MCMs) are presented, in which MMICs and a filter are mounted using flip-chip bonding technique. A multi-layer Low Temperature Co-fired Ceramic (LTCC) substrate is adopted for a package. The MCMs are directly bonded with printed wiring boards using ball grid array technique, achieving connections for signals and biasing. A developed 500-Mbps ASK transceiver exhibits an average output power of 10dBm and a minimum received power of ¿55dBm. The transceiver is applied to the IEEE1394 wireless adapter which demonstrates 17-m communication distance in line of sight.

60-GHz-band dielectric waveguide filters with cross-coupling for flip-chip modules

Small-size planar dielectric waveguide filters are presented for 60-GHz-band flip-chip modules. The filters have cross-coupling to introduce an attenuation pole for higher stop-band rejection. We develop two types of three-resonator filters: one has a medium bandwidth and the other has a narrow bandwidth. The former filter shows 1.1-dB insertion loss at a center frequency of 58.3 GHz and 33-dB suppression at a 3-GHz-higher separation. The latter filter shows 3.1-dB insertion loss at a center frequency of 58.4 GHz and a 10-dB-bandwidth of 2.7 GHz. The size of each filter Is 3.4 mm/spl times/3.5 mm.

A 0.04 cc Power Amplifier Module with Fully Integrated Passives in a Hybrid LTCC Substrate for 5-GHz Wireless LANs

A compact power amplifier (PA) module using a novel hybrid low-temperature co-fired ceramic (LTCC) substrate has been developed for 5-GHz wireless LANs (WLANs). Passive components were embedded in the multi-layer LTCC substrate, which was laminated with three types of dielectrics. The hybrid substrate makes it possible to reduce component area and minimize RF coupling among the components. These improvements allowed us to integrate matching and bias networks within a compact 5 × 5 × 1.4 mm3 (= 0.04 cc) module size. The PA module was accurately designed using a passive component library developed based on EM (electromagnetic) simulation. The fabricated module exhibited power performance sufficient for 5-GHz WLANs, i.e., - linear gain of 25 dB and output 1-dB compression power (P1dB) of 21 dBm with power added efficiency (PAE) of 19%. This is the first report of a PA module with fully embedded matching networks in an LTCC substrate for 5-GHz Wireless LANs.

Low firing temperature silicon oxide for microwave substrate

A novel material for making microwave substrates has been developed. The material is silicon oxide, which has a low dielectric constant (/spl epsi/r=5.0-5.2 at 10-20 GHz) and a low loss tangent (tan/spl delta/=8.3/spl times/10/sup -4/-9.1-10/sup -4/ at 10-20 GHz). The new process makes sintering of this silicon oxide possible at low temperature (below 1000/spl deg/C). Consequently, substrates consisting of this silicon oxide are capable of forming copper conductors by cofiring. The key technologies of this process are using amorphous silicon oxide powder that has a particle diameter of the nanometer order, and firing in an atmosphere containing water. Additionally, a multilayer substrate was developed by applying a green sheet lamination technique.

Flip chip bonding reliability of advanced glass ceramic chip size package

In order to realize high-density wiring and to increase the reliability of chip interconnection to printed wiring boards (PWBs), we have developed glass ceramic chip size packages (CSPs). A 64M-DRAM chip was connected to the glass ceramic substrate via Au bumps by a flip chip bonding technique with high interconnection reliability, and the substrate was mounted on a PWB via solder ball bumps. To evaluate the reliability of the glass ceramic CSP, a thermal stress simulation was performed and the analysis indicated that thin glass ceramic CSPs were highly reliable. This finding was supported by thermal cycle testing using actual glass ceramic CSPs and identically structured alumina CSPs. The thin glass ceramic CSPs passed 1000 cycles, although failures were detected on the alumina CSPs between 500 and 1000 cycles. These failures were analyzed and it was confirmed that fatigue fractures occurred in the solder ball bumps due to coefficient of thermal expansion (CTE) mismatch and substrate rigidity.

Whisker Reinforced Copper / Glass-ceramic Multilayer Substrate

A new Copper/Glass-Ceramic mu1 t i layer substrate has developed. This substrate has advantages of very low dielectric constant (4.0) and, at the same times high mechanical strength (200MPa). Furthermore, this substrate can be wired with highly conduct ive copper ( 1 . 9 , ~ -cm) , so that it can be applied to many systems. This paper discusses three new technologies used, to realize this substrate. They are designing a new GC composite material system, highly conductive copper paste and its manufacturing process. Also, basic pulse transmission properties and high frequency circuit loss for the new substrate are discussed.