Kazuhiro Shimizu

The 2nd Generation divided RESURF structure for High Voltage ICs

The 2nd generation divided RESURF structure has been developed by applying a P- substrate-on-P- epitaxial layer and micro- N+ buried layer (micro-NB) provided at the edge region of the N+ buried layer (NB). The micro-NB reduces the electric field around its own area, and it improves the breakdown voltage with no additional area. Beside, the 2nd generation divided RESURF structure has no effect on the breakdown voltage, because the divide RESURF structure is designed that the depletion layer enough reduces its own electric field.

A novel high voltage Pch-MOS with a new drain drift structure for 1200V HVICs

A new 1200V Pch-MOS having a new drain structure is proposed. Our proposing new 1200V Pch-MOS improves a substrate leak problem which occurred in conventional one without sacrificing a breakdown voltage and an output current. Thanks to the new Pch-MOS, a 1200V HVIC which provides a high voltage level-shifting from high voltage region to low voltage region is successfully realized.