Kazunari Hatade

Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage

Semiconductor device having enhanced di/dt tolerance and dV/dt tolerance

Field effect semiconductor component, such as MOSFET, with MOS structure in semiconductor layer of first conductivity

Semiconductor device with peripheral base region connected to main electrode

Semiconductor device with a main base region

Semiconductor device with a drain region underlying a gate contact pad

Semiconductor device with a peripheral base region

Semiconductor device having a conductive field plate layer

Halbleiterbaugruppe, die einen Latch-up-Durchbruch infolge einer negativen Änderung einer Floating-Offsetspannung verhindern kann Semiconductor device that can prevent a latch-up due to breakthrough a negative change in a floating offset voltage

Halbleiterbaugruppe mit einem Graben zum Treiben eines Schaltselement und Vermeiden eines Latch-up Durchbruchs Semiconductor device having a trench for driving a switching element and avoiding a latch-up breakdown