Kazuko Nishimura

A 1.25-Gb/s CMOS burst-mode optical transceiver for ethernet PON system

A 1.25-Gb/s burst-mode optical transceiver for an Ethernet Passive Optical Network (EPON) system has been developed using a 0.25-/spl mu/m CMOS technology. With the new automatic gain control (AGC) technique and reference-voltage generator (RVG), the optical receiver achieved wide dynamic range of 26.8 dB with sensitivity of -29.0 dBm and overload of -2.2 dBm at a 1.25-Gb/s burst-mode transmission. Moreover, coming up with the novel automatic optical output power and extinction ratio control (APC) system, the optical transmitter successfully suppressed their variations within /spl plusmn/0.4 dBm and /spl plusmn/0.6 dB, respectively in wide temperature range from -40 to 100/spl deg/C. This is the first CMOS optical transceiver that meets the specifications of IEEE802.3ah PX20 standard.

A 6 b 800 MSample/s CMOS A/D converter

In recent years, the demand for high-speed CMOS A/D converters has grown rapidly in digital read channel systems such as HDD. This 6 b CMOS ADC, attains 800 MSample/s conversion rate, the highest rate in CMOS implementation.

A 1.25Gbit/s CMOS burst-mode optical transceiver for Ethernet PON system

A 1.25Gbit/s burst-mode optical transceiver for Ethernet Passive Optical Network (EPON) system has been developed using a 0.25 /spl mu/m CMOS technology. With new automatic gain control technique and reference-voltage generator, the optical receiver achieved wide dynamic range of 26.3dB with sensitivity of -29.0dBm and overload of -2.7dBm at 1.25Gbit/s burst-mode transmission. Moreover, coming up with a novel automatic power and extinction ratio control method, the optical transmitter successfully suppressed their variations within /spl plusmn/0.4dBm and /spl plusmn/0.6dB respectively in wide temperature range from -40 to 100/spl deg/C.

6.1 An over 120dB simultaneous-capture wide-dynamic-range 1.6e− ultra-low-reset-noise organic-photoconductive-film CMOS image sensor

Image sensors are increasingly becoming key devices for various applications (in-vehicle, surveillance, medical, and so on). To realize the best possible imaging and sensing performance, there is growing demand for extended dynamic range that can precisely reproduce color tone. Several conventional papers have described methods for enhancing dynamic range, such as multiple exposures in a frame [1] and a lateral overflow integration capacitor [2,3]. However, all these techniques realize a 100-to-200dB dynamic range by synthesizing multiple exposures, with asynchronism between multiple exposures causing time distortion. Thus, a simultaneous-capture wide dynamic range (SCWDR) over 100dB is desired.