Junji Hirase

Deep-submicrometer large-angle-tilt implanted drain (LATID) technology

Deep-submicrometer large-angle-tilt implanted drain (LATID) technology is described. It is found by Monte Carlo process simulation and SIMS measurements that a sufficiently long n/sup -/ region can be formed under the gate by taking advantage of large-angle-tilt implant and successfully without ion channeling by taking care of the implant direction. A design that offsets the n/sup +/ implant by sidewall spacers to suppress the n/sup +/-gate overlap to zero while keeping the n/sup -/ region fully overlapped with the gate is found to be crucial for improved performance and reliability. The device performance, such as current drivability and short-channel effects, is described, and the circuit speed is investigated. Hot-carrier effects such as lateral electric field and device lifetime over a wide range of drain structures are also investigated. The tradeoff between device performance and hot-carrier reliability in deep-submicrometer LATID FETs is discussed. >

A 256-Mb DRAM with 100 MHz serial I/O ports for storage of moving pictures

A 256-Mb DRAM with refresh-free-FIFO function for storage of moving pictures has been developed using 0.25-/spl mu/m CMOS technology. An operating current of 73 mA (reduction of 52% compared with a conventional circuit) has been achieved at 100 MHz based on introducing (1) a suppressed High(H)-level differential data transfer scheme which ran be operated at 0.6 V, (2) a new pre-charge method which features a 1/2 VCC precharge level in read cycle and VSS pre-charge level in write cycle, and (3) a divided operation of array circuits for serial access. >

6.1 An over 120dB simultaneous-capture wide-dynamic-range 1.6e− ultra-low-reset-noise organic-photoconductive-film CMOS image sensor

Image sensors are increasingly becoming key devices for various applications (in-vehicle, surveillance, medical, and so on). To realize the best possible imaging and sensing performance, there is growing demand for extended dynamic range that can precisely reproduce color tone. Several conventional papers have described methods for enhancing dynamic range, such as multiple exposures in a frame [1] and a lateral overflow integration capacitor [2,3]. However, all these techniques realize a 100-to-200dB dynamic range by synthesizing multiple exposures, with asynchronism between multiple exposures causing time distortion. Thus, a simultaneous-capture wide dynamic range (SCWDR) over 100dB is desired.