Kee-jeung Lee
SK Hynix
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Publication
Featured researches published by Kee-jeung Lee.
symposium on vlsi technology | 2006
Deok-Sin Kil; Han-Sang Song; Kee-jeung Lee; Kwon Hong; Jin-Hyock Kim; Ki-Seon Park; Seung-Jin Yeom; Jae-Sung Roh; Noh-Jung Kwak; Hyun-Chul Sohn; Jin-Woong Kim; Sung-Wook Park
New ZrO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub> (ZAZ) dielectric film was theoretically designed and successfully demonstrated to be applicable to 45nm DRAM devices. ZAZ dielectric film is a combined structure from tetragonal ZrO<sub>2</sub> and amorphous Al <sub>2</sub>O<sub>3</sub>. Thus prepared ZAZ TFT capacitors showed very small Tox.eq value of 6.3Aring and low leakage current less than 1fA/cell. It was also confirmed that ZAZ TFT capacitor was thermally robust during backend full thermal process by applying it to the final DRAM product in mass production
Applied Physics Letters | 2011
Yunsang Shin; Kyung Kyu Min; Seok-Hee Lee; Sung Kyu Lim; Jae Sub Oh; Kee-jeung Lee; Kwon Hong; Byung Jin Cho
Cubic-structured HfLaO embedded tetragonal ZrO2 is investigated for application to a dynamic random access memory capacitor dielectric. It is found that hole injection is the determining factor of the leakage current in the ZrO2–HfLaO stack and thus HfLaO should be kept away from the electrode interface due to its smaller valance band offset than that of ZrO2. The insertion of cubic-structured HfLaO into tetragonal ZrO2 with an optimized thickness combination can effectively reduce the equivalent oxide thickness without increasing the leakage current.
Japanese Journal of Applied Physics | 2013
Beom-Yong Kim; Wangee Kim; Hyojune Kim; Kyooho Jung; Woo-young Park; Bomin Seo; Moon-Sig Joo; Kee-jeung Lee; Kwon Hong; Sungki Park
The effects of TiN top electrode composition (TiN vs Ti-rich TiN) on the resistive switching characteristics of selector-less TiN/TiOx/Ta2O5/TiN resistive random access memory (ReRAM) are investigated. Ti-rich TiN enables TiOx to have a higher concentration of oxygen vacancy and reduce barrier height between top electrode and TiOx. This leads to higher on/off current ratio and lower operation voltage without degradation of non-linearity which is the important factor for selector-less type ReRAM, compared to the stoichiometric TiN resistor stack. Consequently, it is verified that the switching mechanism is hybrid combination of filament formation and redox reaction in switching operation. This work is applicable to both high density and cost-effective ReRAM.
european solid state device research conference | 2011
Beom-Yong Kim; Yun-Hyuck Ji; Seung-Mi Lee; BongSeok Jeon; Kee-jeung Lee; Kwon Hong; Sungki Park
The origin of flat band voltage shift phenomena using arsenic ion-implant in High-k/Metal Inserted Poly Si (HK/MIPS) gate stacks was investigated. Arsenic ion-implantations were carried out on HfSiO and HfSiON dielectric layers. Precise arsenic profile was obtained through front and backside SIMS analysis. From the electrical and physical analysis, we verified that the flat band voltage was shifted due to an arsenic dipole formation at high-k/metal interface. The negative shift of 480mV was obtained with the optimized arsenic ion implant condition.
symposium on vlsi technology | 2004
Deok-Sin Kil; Kwon Hong; Kee-jeung Lee; Joosung Kim; Han-Sang Song; Ki-Seon Park; Jae-Sung Roh; Hyun-Chul Sohn; Jin-Woong Kim; Sung-Wook Park
TIT capacitor with Nano-mixed Hf/sub x/Al/sub y/O/sub z/ dielectric was successfully demonstrated to be applicable to 65nm DRAM devices. Nano-mixed Hf/sub x/Al/sub y/O/sub z/ thin film by ALD(Atomic Layer Deposition) showed an excellent thermal stability even up to 700/spl deg/C without any leakage current degradation. Moreover, Nano-mixed films revealed lower leakage current than laminate due to effective nano-scale mixing of HfO/sub 2/ and Al/sub 2/O/sub 3/TiN/Hf/sub x/Al/sub y/O/sub z//TiN capacitor turned out to be applicable to 65nm DRAM showing low EOT of 11/spl Aring/ and low leakage of 1 fA/cell.
Archive | 2009
Eun-Shil Park; Young-Seok Eun; Kee-jeung Lee; MinSoo Kim
Archive | 2009
Kee-jeung Lee
Archive | 2004
Kee-jeung Lee; Hong Kwon
Archive | 2006
Deok-Sin Kil; Kee-jeung Lee; Han-Sang Song; Young-dae Kim; Jin-Hyock Kim; Kwan-Woo Do; Kyung-Woong Park
Archive | 2015
Beom-Yong Kim; Kee-jeung Lee; Wan-Gee Kim; Hyo-june Kim