Keiichiro Sano

High quality SiO2 depositions from TEOS by ECR plasma

Abstract SiO 2 thin films were fabricated in an electron cyclotron resonance plasma using tetraethyloxysilane (TEOS) as the silicon source. Oxygen was used as the plasma gas. The film growth rate decreases with an increase of substrate temperature yielding a negative activation energy for the film growth rate. The deposition rate is also dependent on the TEOS flow rate and applied microwave power. These two parameters have significant roles in controlling the film quality. The step coverage characteristics of the film deposited on patterned surfaces are dependent on the substrate temperature. A conformai step coverage on Al wires of 0.5 μm width and 1 μm height could be obtained at substrate temperatures over 200°C.

Dissolution method of unsaturated polyester in bean oil

Abstract It is difficult to realize a recycling system of fiber-reinforced plastics (FRP) because of the cross-linked structure of unsaturated polyester (UP) and filler fibers. In this study, we developed a new type of heat-dissolution technique in FRP with vegetable oil for recycling. In this method, an easy separation between glass fiber and the matrix resin dissolved was attained. Further, it was found that the FRP dissolution product can be used for a boiler fuel as thermal recycling, and the glass fiber can be used for an asphalt sheet as material. Fundamental data for FRP recycling were investigated.

Deposition of thin SiO{sub 2} films on polymers as a hard-coating using a microwave-ECR plasma

SiO{sub 2} thin films were deposited on automobile plastics at low temperatures using a microwave activated ECR plasma. Oxygen was used as the plasma gas while tetraethoxysilane (TEOS) was used as the source gas which was introduced into the downstream. In the present investigation high quality SiO{sub 2} films were deposited on polycarbonate (PC) and polypropylene (PP) substrates with and without a mesh and the characteristics of hard coating films were studied. The film growth rate increases with the decrease of substrate temperature when a mesh is inserted into the plasma. The irregularities of polymer surfaces could be planarized by the deposition of 1.0 {micro}m thick SiO{sub 2} film. The dynamic hardness of PC and PP are increased by the deposition of SiO{sub 2} film, however, films deposited on PP is seen to be cracked while that of on PC is crack-free.

Deposition of High Quality SiO 2 Films Using Teos by ECR Plasma

SiO2 thin firms were fabricated in a remote electron cyclotron resonance (ECR) plasma by tctraethoxysilane (TEOS) as the silicon source. Oxygen was used as the plasma gas. A mesh was placed between the TEOS gas outlet and the substrate. In the present investigation a-SiO2 films were deposited with and without the mesh and film properties were studied comparatively. The deposition rate increased when the mesh was attached. The optimum deposition rate is observed when the mesh voltage was zero, that is the mesh was grounded. The deposition rates of both methods were also dependnt on the TEOS flow rate, applied microwave power and the substrate temperature. These three parameters have significant roles in controlling the film quality. Good quality SiO2 films can be obtained with a higher deposition rate when a mesh is attached.