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Dive into the research topics where Khalil Hosseini is active.

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Featured researches published by Khalil Hosseini.


Synthetic Metals | 1999

Glass transition in CDW system o-TaS3

K. Biljaković; D. Starešinić; Khalil Hosseini; Wolfgang Brütting

Abstract We report on the experimental evidence of a glass transition in the CDW phase of orthorhombic TaS 3 at T g ~ 50 K, brought by means of dielectric constant measurement. The relaxational mode exhibits in this T-range a critical slowing down instead of an expected activated behavior. New processes appear below the glass transition temperature which we attribute to the defect dynamics. There is an apparent similarity with the scenario of freezing out in supercooled liquids. However, the peculiarity of this glass transition is a very large length scale of order of μm (beyond the phase coherence length of the underlying CDW), compared to nm in supercooled liquids.


Physical Review B | 2002

Wide-temperature-range dielectric response of the charge-density-wave system TaS/sub 3/.

Damir Starešinić; Katica Biljaković; Wolfgang Brütting; Khalil Hosseini; P. Monceau; H. Berger; Frances Levy


Archive | 2003

Connection comprising a diffusion soldered junction, and method for the production thereof

Khalil Hosseini; Edmund Riedl


Physical Review B | 2004

Glass transition and secondary relaxation in the charge-density-wave system K0.3MoO3

D. Starešinić; Khalil Hosseini; Wolfgang Brütting; K. Biljaković; E. Riedel; S. van Smaalen


Physical Review B | 2000

Influence of niobium on the charge-density-wave transition of Ni ( Ta 1 − x Nb x ) 2 Se 7

J. Lüdecke; Edmund Riedl; Mathias Dierl; Khalil Hosseini; Sander van Smaalen


Archive | 2010

Layer between interfaces of different components in semiconductor devices and method for preparing the same, semiconductor device having the layer and manufacturing method thereof

Angela Kessler; Alfred Haimerl; Michael Bauer; Joachim Mahler; Khalil Hosseini; Wolfgang Schober


Archive | 2010

Device and Method for Manufacturing a Device

Manfred Mengel; Joachim Mahler; Khalil Hosseini


Archive | 2006

Component arrangement for series terminal for high-voltage applications

Ralf Otremba; Khalil Hosseini; Helmut Strack


Journal De Physique Iv | 1999

Glass-like behavior in the CDW state of the quasi-one-dimensional conductor K0.3MoO3

Khalil Hosseini; Wolfgang Brütting; M. Schwoerer; E. Riedel; S. van Smaalen; K. Biljaković; D. Starensinic


Archive | 2015

Halbleiterbauelement und verfahren Semiconductor device and method

Khalil Hosseini; Frank Kahlmann; Anton Mauder

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