Kiyoshi Tone

AlGaAs grating surface‐emitting beam deflector utilizing carrier‐induced refractive index change

A new type of AlGaAs grating surface‐emitting beam deflector is proposed. The deflection is controlled by a carrier‐induced refractive index change of the waveguide on which the grating output coupler is fabricated. About 0.6° of the maximum deflection angle is obtained at the injection current of 1.6 A. This corresponds to about 12 resolvable spots.

Proposal of self-scanning light emitting device (SLED)

A novel functional optoelectronic device, the self-scanning light-emitting device (SLED), is proposed. The SLED consists of light-emitting thyristors whose turn-on voltages interact with each other, and the light-emitting element is automatically transferred by input clock pulses. GaAs SLED operation was demonstrated using four phase transfer clock pulses, and a maximum transfer rate of 3 MHz was obtained. It is suggested that the SLED is promising for optical computing and optical interconnection technology with high-density integration.<<ETX>>

AlGaAs Grating Surface-Emitting Beam Deflector for a 1 × N Space-Division Optical Switch

A new type of beam deflector for a 1 × N space-division optical switch has been fabricated. The deflection is controlled by a carrier induced refractive index change of the semiconductor waveguide. The deflected beam is emitted normally with a grating coupler. The maximum number of resolvable spots is 10 for an injection current of about 630 mA.