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Kleint Christoph

Infineon Technologies

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Publication

Featured researches published by Kleint Christoph.

Archive | 2005

METHOD FOR THE PRODUCTION OF SONOS MEMORY CELLS

Deppe Joachim; Ludwig Christoph; Kleint Christoph; Willer Josef

Archive | 2004

Production of memory cell, especially NROM memory cells, comprises implanting nitrogen into the walls of a trench before forming electrically insulating layers or producing covered spacers on the walls of the trench

Deppe Joachim; Ludwig Christoph; Kleint Christoph; Willer Josef

Archive | 2003

Semiconductor memory having vertical charge trapping memory cells capable of contacting bit lines on grave bottoms at low cost and manufacturing method thereof

Kleint Christoph; Deppe Joachim; Ludwig Christoph; Sachse Jens Uwe

Archive | 2002

Verfahren zur Herstellung eines Halbleiterspeichers mit Charge-Trapping-Speicherzellen

Sachse Jens-Uwe; Deppe Joachim; Mikalo Ricardo; Krause Mathias; Richter Ralf; Ludwig Christoph; Kleint Christoph

Archive | 2007

Speicherzelle mit Grabenspeichertransistor und Oxid-Nitrid-Oxid-Dielektrikum

Deppe Joachim; Ludwig Christoph; Kleint Christoph

Archive | 2006

Speicherzellenarray mit vergrabener Bitleitung mit reduziertem Widerstand und Herstellungsverfahren hierfür

Kleint Christoph; Fitz Clemens; Ulrike Bewersdorff-Sarlette; Ludwig Christoph; David Pritchard; Torsten Müller; Hocine Boubekeur

Archive | 2006

Memory cell array with a buried bit line with reduced resistance and manufacturing method thereof

Kleint Christoph; Fitz Clemens; Ulrike Bewersdorff-Sarlette; Ludwig Christoph; David Pritchard; Torsten Müller; Hocine Boubekeur

Archive | 2006

Speicherzellenarray mit vergrabener Bitleitung mit reduziertem Widerstand und Herstellungsverfahren hierfür Memory cell array for this with a buried bit line with reduced resistance and manufacturing processes

Kleint Christoph; Fitz Clemens; Ulrike Bewersdorff-Sarlette; Ludwig Christoph; David Pritchard; Torsten Müller; Hocine Boubekeur

Archive | 2005

Memory cell with improved data retention has memory layer, at least one bounding layer that is thicker towards lateral edges of channel region than in central region of channel region

Fischer Jan-Malte; Sachse Jens-Uwe; Wein Guenter; Kleint Christoph; Deppe Joachim; Krause Mathias

Archive | 2005

Charge-trapping memory cell especially SONOS- and NROM- storage cells, has memory layer sequence for charge-trapping with memory zone between confinement layers

Sachse Jens-Uwe; Mikalo Ricardo; Richter Ralf; Deppe Joachim; Fischer Jan-Malte; Kleint Christoph

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Collaboration

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Ludwig Christoph

Infineon Technologies

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Deppe Joachim

Infineon Technologies

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Sachse Jens-Uwe

Infineon Technologies

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Willer Josef

Infineon Technologies

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Fitz Clemens

Infineon Technologies

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David Pritchard

Qimonda

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Hocine Boubekeur

Infineon Technologies

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Torsten Müller

Qimonda

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Ulrike Bewersdorff-Sarlette

Qimonda

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Fischer Jan-Malte

Infineon Technologies

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