Koichi Muraoka

Si nanocrystal MOSFET with silicon nitride tunnel insulator for high-rate random number generation

It is shown that sub-0.1 μm Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate small-size random number generation circuit, which is required for cryptograph application in mobile network security. A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that a small-size random number generator with MHz generation rate, which is applicable for almost all security uses in our computer society, is possible by Si nanocrystal MOSFET device design