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Dive into the research topics where Koji Shirai is active.

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Featured researches published by Koji Shirai.


international symposium on power semiconductor devices and ic's | 2009

Ultra-low on-resistance LDMOS implementation in 0.13µm CD and BiCD process technologies for analog power IC's

Koji Shirai; Koji Yonemura; Kiminori Watanabe; Koji Kimura

Toshibas 5th generation BiCD/CD-0.13 is a new process platform for analog power applications based on 0.13µm CMOS technology. The process platform has six varieties of rated voltage, 5V, 6V, 18V, 25V, 40V, and 60V. 5 to 18V CD-0.13 process use P-type silicon substrate. 25 to 60V BiCD-0.13 process use N-Epi wafer with N+/P+ buried layer on P type silicon substrate. Each LDMOS recode ultra-low on-resistance compared with that of previous papers, and we will realize the highest performance analog power ICs using this technology.


SID Symposium Digest of Technical Papers | 2005

P‐47: Quiet Code: A Transition‐Minimized Code to Eliminate Inter‐Word Transition for an LCD‐Panel Module Interface

Hisashi Sasaki; Tooru Arai; Masayuki Hachiuma; Akira Masuko; Takashi Taguchi; Koji Shirai; Takao Ito

Quiet code not only minimizes intra-word transition but also eliminates inter-word transition for EMI reduction in LCD panel module interface. Combined with modulo reduction, it also avoids the extra bit of DPCM prediction error without any information loss, and it is estimated to gain 7-dB EMI suppression with 1-V predictor.


Archive | 1995

FET having gate insulating films whose thickness is different depending on portions

Koji Shirai


Archive | 1987

Semiconductor device IC with DMOS using self-aligned back gate region

Koji Shirai; Ken Kawamura


Archive | 1991

MOS transistor with high breakdown voltage

Koji Shirai; Ken Kawamura


Archive | 2008

Method for optimizing an industrial product, system for optimizing an industrial product and method for manufacturing an industrial product

Kazumi Nishinohara; Mitsutoshi Nakamura; Kyoichi Suguro; Koji Shirai; Ichiro Taguchi


Archive | 2001

Double diffused mosfet

Koji Shirai


Archive | 1987

Double diffused mosfet with potential biases

Koji Shirai


Archive | 1989

Method of manufacturing double diffused mosfet with potential biases

Koji Shirai


Archive | 2004

Semiconductor device having a diffusion layer and a manufacturing method thereof

Yasunori Iwatsu; Koji Shirai; Yuri Tamura

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