Koki Oyama

Development of basic-type CMP/P-CVM fusion processing system (Type A) and its fundamental characteristics

We propose a chemical mechanical polishing (CMP)/Plasma Chemical Vaporization Machining (P-CVM) fusion processing and developed basic type CMP/P-CVM fusion processing, which consists of mechanical polish part, P-CVM part, and sample holder moving between them. As a result of basic experiments using silicon carbide as a sample, it is found that Peak to valley of the surface profile can be reduced from 1500 nm to 200-300 nm by 40-times repetition of the mechanical polishing followed by P-CVM and the decrease rate of the height of the mesa structures by a CMP/P-CVM fusion processing is approximately 3.5 times larger than that of the mechanical polish.

Study on a novel CMP/P-CVM fusion processing system (Type B) and its basic characteristics

In this study, we are aiming to establish a high-efficiency, high-quality polishing process of the hard-to-process materials. Recently high-grade semiconductor substrates are made by various processing methods. CMP (Chemical Mechanical Polishing) is a main processing method to planarize a substrate. On the other hand, P-CVM is a superior processing method which does not damage the substrate surface. To achieve high-efficiency, high-quality processing, we designed an innovative fusion CMP/P-CVM processing machine and produced it experimentally. Through investigation of a fundamental property of the CMP/P-CVM fusion processing machine, we confirmed increase in removal rate and reduction of the surface roughness by the synergistic effects.