Kuo-Bin Hong

High-Operation-Temperature Plasmonic Nanolasers on Single-Crystalline Aluminum

The recent development of plasmonics has overcome the optical diffraction limit and fostered the development of several important components including nanolasers, low-operation-power modulators, and high-speed detectors. In particular, the advent of surface-plasmon-polariton (SPP) nanolasers has enabled the development of coherent emitters approaching the nanoscale. SPP nanolasers widely adopted metal-insulator-semiconductor structures because the presence of an insulator can prevent large metal loss. However, the insulator is not necessary if permittivity combination of laser structures is properly designed. Here, we experimentally demonstrate a SPP nanolaser with a ZnO nanowire on the as-grown single-crystalline aluminum. The average lasing threshold of this simple structure is 20 MW/cm(2), which is four-times lower than that of structures with additional insulator layers. Furthermore, single-mode laser operation can be sustained at temperatures up to 353 K. Our study represents a major step toward the practical realization of SPP nanolasers.

Surface roughness effects on aluminium-based ultraviolet plasmonic nanolasers

We systematically investigate the effects of surface roughness on the characteristics of ultraviolet zinc oxide plasmonic nanolasers fabricated on aluminium films with two different degrees of surface roughness. We demonstrate that the effective dielectric functions of aluminium interfaces with distinct roughness can be analysed from reflectivity measurements. By considering the scattering losses, including Rayleigh scattering, electron scattering, and grain boundary scattering, we adopt the modified Drude-Lorentz model to describe the scattering effect caused by surface roughness and obtain the effective dielectric functions of different Al samples. The sample with higher surface roughness induces more electron scattering and light scattering for SPP modes, leading to a higher threshold gain for the plasmonic nanolaser. By considering the pumping efficiency, our theoretical analysis shows that diminishing the detrimental optical losses caused by the roughness of the metallic interface could effectively lower (~33.1%) the pumping threshold of the plasmonic nanolasers, which is consistent with the experimental results.

Thermally Strained Band Gap Engineering of Transition Metal Dichalcogenide Bilayers with Enhanced Light-Matter Interaction toward Excellent Photodetectors

Integration of strain engineering of two-dimensional (2D) materials in order to enhance device performance is still a challenge. Here, we successfully demonstrated the thermally strained band gap engineering of transition-metal dichalcogenide bilayers by different thermal expansion coefficients between 2D materials and patterned sapphire structures, where MoS2 bilayers were chosen as the demonstrated materials. In particular, a blue shift in the band gap of the MoS2 bilayers can be tunable, displaying an extraordinary capability to drive electrons toward the electrode under the smaller driven bias, and the results were confirmed by simulation. A model to explain the thermal strain in the MoS2 bilayers during the synthesis was proposed, which enables us to precisely predict the band gap-shifted behaviors on patterned sapphire structures with different angles. Furthermore, photodetectors with enhancement of 286% and 897% based on the strained MoS2 on cone- and pyramid-patterned sapphire substrates were demonstrated, respectively.

Localized surface plasmon for enhanced lasing performance in solution-processed perovskites.

A promising method to promote the lasing performance of solution-processed organic-inorganic lead-halide perovskites has been demonstrated. With the adding Ag and PMMA thin films, the threshold excitation power for low-temperature lasing action in perovskites can be greatly reduced by over two orders of magnitude than that acquired in bare perovskite layers, ascribing to the strong exciton-plasmon coupling between the Ag and perovskite films. Also, the PMMA layer can be exploited to prevent the perovskite degradation from the hydrolysis in ambient environment, achieving long-lasting light-emitting performance. The advantages exhibited by the hybrid perovskite configuration would be very promising in making practical laser devices.

Controllable lasing performance in solution-processed organic–inorganic hybrid perovskites

Solution-processed organic-inorganic perovskites are fascinating due to their remarkable photo-conversion efficiency and great potential in the cost-effective, versatile and large-scale manufacturing of optoelectronic devices. In this paper, we demonstrate that the perovskite nanocrystal sizes can be simply controlled by manipulating the precursor solution concentrations in a two-step sequential deposition process, thus achieving the feasible tunability of excitonic properties and lasing performance in hybrid metal-halide perovskites. The lasing threshold is at around 230 μJ cm-2 in this solution-processed organic-inorganic lead-halide material, which is comparable to the colloidal quantum dot lasers. The efficient stimulated emission originates from the multiple random scattering provided by the micro-meter scale rugged morphology and polycrystalline grain boundaries. Thus the excitonic properties in perovskites exhibit high correlation with the formed morphology of the perovskite nanocrystals. Compared to the conventional lasers normally serving as a coherent light source, the perovskite random lasers are promising in making low-cost thin-film lasing devices for flexible and speckle-free imaging applications.

Quantum-Dot Surface Emitting Distributed Feedback Lasers Using Indium–Tin–Oxide as Top Claddings

We demonstrate InAs/InGaAs quantum-dot surface emitting distributed feedback (SE-DFB) lasers, using an indium-tin-oxide layer as top cladding, which eliminates the regrowth process used in conventional DFB lasers to greatly simplify laser process. The lasing peak near 1.30 μm realized using the grating period of 375 nm exhibited a 0.13-nm linewidth and a low-temperature red-shift rate of 0.1 nm/K. The laser had a threshold current density of 210 A/cm2 and a characteristic temperature of 94.6 K. The surface emitting laser light had the divergence angles of less than 1° and 8°~9° along and perpendicular to the grating direction, respectively.

Ultracompact Pseudowedge Plasmonic Lasers and Laser Arrays

Concentrating light at the deep subwavelength scale by utilizing plasmonic effects has been reported in various optoelectronic devices with intriguing phenomena and functionality. Plasmonic waveguides with a planar structure exhibit a two-dimensional degree of freedom for the surface plasmon; the degree of freedom can be further reduced by utilizing metallic nanostructures or nanoparticles for surface plasmon resonance. Reduction leads to different lightwave confinement capabilities, which can be utilized to construct plasmonic nanolaser cavities. However, most theoretical and experimental research efforts have focused on planar surface plasmon polariton (SPP) nanolasers. In this study, we combined nanometallic structures intersecting with ZnO nanowires and realized the first laser emission based on pseudowedge SPP waveguides. Relative to current plasmonic nanolasers, the pseudowedge plasmonic lasers reported in our study exhibit extremely small mode volumes, high group indices, high spontaneous emission factors, and high Purell factors beneficial for the strong interaction between light and matter. Furthermore, we demonstrated that compact plasmonic laser arrays can be constructed, which could benefit integrated plasmonic circuits.

Collective Lasing Behavior of Monolithic GaN–InGaN Core–Shell Nanorod Lattice under Room Temperature

We demonstrated a monolithic GaN-InGaN core-shell nanorod lattice lasing under room temperature. The threshold pumping density was as low as 140 kW/cm2 with a quality factor as high as 1940. The narrow mode spacing between lasing peaks suggested a strong coupling between adjacent whisper gallery modes (WGM), which was confirmed with the far-field patterns. Excitation area dependent photoluminescence revealed that the long-wavelength lasing modes dominated the collective lasing behavior under a large excitation area. The excitation-area-dependent lasing behavior resulted from the prominent optical coupling among rods. According to the optical mode simulations and truncated-rod experiments, we confirmed that the fine-splitting of lasing peaks originated from the coupled supermodes existing in the periodic nanorod lattices. With wavelength-tunable active materials and a wafer-level scalable processing, patterning optically coupled GaN-InGaN core-shell nanorods is a highly practical approach for building various on-chip optical components including emitters and coupled resonator waveguides in visible and ultraviolet spectral range.

Characteristics Improvement of Surface-Emitting Distributed Feedback Lasers With ITO Claddings

In this study, significant improvements in the characteristics of the InAs quantum-dot surface-emitting distributed feedback lasers using indium tin oxide as a cladding material covered by two types of newly designed metal contacts were achieved. Laser characteristics at room temperature including I–V curves, L–I curves, near-field patterns, and lasing spectra are analyzed and discussed. We adopted a metal grating and a metal strip as p-type electrodes to improve the current distribution of the devices. Uniform laser emission in the near-field was observed. Moreover, substantial reductions in the ohmic resistance of 9.35 Ω and a low-threshold current density of 0.28 kA/cm2 were both achieved under continuous-wave operation, leading to the prospect of high-performance surface emitting distributed feedback.

High-temperature operation of GaN-based vertical-cavity surface-emitting lasers

We report GaN-based vertical-cavity surface-emitting lasers (VCSELs) capable of high-temperature operation. The GaN-based VCSELs include double dielectric distributed Bragg reflectors and epitaxially grown p–i–n InGaN multiple-quantum-well active layers initially deposited on c-plane sapphire substrates that are bonded to a silicon substrate with a p-side-down and patterned mirror configuration, allowing effective heat dissipation. GaN-based VCSELs with an emission aperture 10 µm in diameter were fabricated, and their temperature-dependent lasing characteristics revealed that the VCSELs can endure 350 K, as measured under quasicontinuous-wave operation conditions. The temperature-dependent lasing wavelength shift occurs at a rate of dλFP/dT ≈ 0.012 nm/K. The high-temperature operation of GaN-based VCSELs was attributed to the well-matched gain-mode offset, the p-side-down configuration, and the reduced lateral size of the bottom distributed Bragg reflector with recessed metal.