Kyoung-lae Cho
Samsung
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Publication
Featured researches published by Kyoung-lae Cho.
symposium on vlsi technology | 2006
Suk-pil Kim; Won-joo Kim; Jae-woong Hyun; Sung-jae Byun; Junemp Koo; Jung-Hoon Lee; Kyoung-lae Cho; Seong-taek Lim; Jong-Bong Park; In-kyeong Yoo; Choong-ho Lee; Donggun Park; Yoon-dong Park
A new type of memory, paired FinFET charge trap memory is reported. It consists of two split silicon fins and insulator between them. Two channels are formed on the outer surface of silicon so doubled integration density can be achieved. We successfully fabricated paired FinFET SONOS devices. It shows good program and erase characteristics. Independent programming on each storage nodes is demonstrated. The circuit configuration for NAND flash application is also proposed
Archive | 2011
Yong June Kim; Junjin Kong; Kyoung-lae Cho
Archive | 2008
Ju-hee Park; Young-Moon Kim; Yoon-dong Park; Seung-Hoon Lee; Kyoung-lae Cho; Sung-jae Byun; Seung-Hwan Song
Archive | 2009
Han Woong Yoo; Kyoung-lae Cho; Seung-Hwan Song; Heeseok Eun; Hong Rak Son
Archive | 2011
Eun Chu Oh; Hong Rak Son; Kyoung-lae Cho; Junjin Kong
Archive | 2010
Young Gu Jin; Kwan-young Oh; Samuel Sungmok Lee; Kwang-Chol Choe; Se-Won Seo; Yoon-dong Park; Eric R. Fossum; Kyoung-lae Cho
Archive | 2011
Yong June Kim; Hong Rak Son; Seonghyeog Choi; Junjin Kong; Yongtaew Yim; Jae Hong Kim; Kyoung-lae Cho; Wootae Chang
Archive | 2012
Kyoung-lae Cho; Junjin Kong; Jae Hong Kim
Archive | 2008
Ju-hee Park; Jae-woong Hyun; Yoon-dong Park; Kyoung-lae Cho; Sung-jae Byun; Seung-Hwan Song; Jun-jin Kong; Sung-chung Park
Archive | 2011
Hyuck-Sun Kwon; Kyoung-lae Cho
