L.C.N. de Vreede

Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks

This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q>100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, ft=50 GHz) high voltage breakdown transistor (VCBO=14 V, VCEO>3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above 1 GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm2

A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications

A three-way Doherty 100-W GaN base-station power amplifier at 2.14 GHz is presented. Simple, but accurate design equations for the output power combiner of the amplifier are introduced. Mixed-signal techniques are utilized for uncompromised control of the amplifier stages to optimize efficiency, as well as linearity. The combination of the above techniques resulted in an unprecedented high efficiency over a 12-dB power backoff range, facilitating a record high power-added efficiency for a wideband code division multiple access test signal with high crest factor, while meeting all the spectral requirements for Universal Mobile Telecommunications System base stations.

A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning

A 90-W peak-power 2.14-GHz improved GaN outphasing amplifier with 50.5% average efficiency for wideband code division multiple access (W-CDMA) signals is presented. Independent control of the branch amplifiers by two in-phase/quadrature modulators enables optimum outphasing and input power leveling, yielding significant improvements in gain, efficiency, and linearity. In deep-power backoff operation, the outphasing angle of the branch amplifiers is kept constant below a certain power level. This results in class-B operation for the very low output power levels, yielding less reactive loading of the output stages, and therefore, improved efficiency in power backoff operation compared to the classical outphasing amplifiers. Based on these principles, the optimum design parameters and input signal conditioning are discussed. The resulting theoretical maximum achievable average efficiency for W-CDMA signals is presented. Experimental results support the foregoing theory and show high efficiency over a large bandwidth, while meeting the linearity specifications using low-cost low-complexity memoryless pre-distortion. These properties make this amplifier concept an interesting candidate for future multiband base-station implementations.

A Mixed-Signal Approach Towards Linear and Efficient

A mixed-signal approach for the design and testing of high-performance N-way Doherty amplifiers is introduced. In support of this, an analysis of N-way power-combining networks is presented-in particular, their optimum design-by examining the relationship between the drive conditions of the active devices and input power. This analysis makes no prior assumption on the network topology and facilitates free-to-choose levels for the high-efficiency power back-off points. By comparing the results of this analysis with prior work, it is shown that very specific drive conditions apply to traditional three-way Doherty amplifier implementations to obtain simultaneously high-efficiency and high-linearity operation. To support these conclusions, a 15-W three-way Doherty amplifier was constructed using Philips GEN4 LDMOS devices featuring three separate inputs to independently drive the main and peaking devices. By testing this three-way amplifier with a custom-built measurement setup, capable of providing multiple digitally controlled coherent RF input signals with high spectral purity, a unique flexible amplifier concept is created resulting in a record-high efficiency for LDMOS-based Doherty amplifiers over a 12-dB back-off power range

N

A new wideband open-loop active harmonic load-pull measurement approach is presented. The proposed method is based on wideband data-acquisition and wideband signal-injection of the incident and device generated power waves at the frequencies of interest. The system provides full, user defined, in-band control of the source and load reflection coefficients presented to the device-under-test at baseband, fundamental and harmonic frequencies. The system capability to completely eliminate electrical delay allows to mimic realistic matching networks using their measured or simulated frequency response. This feature enables active devices to be evaluated for their actual in-circuit behavior, even on wafer. Moreover the proposed setup provides the unique feature of handling realistic wideband communication signals like multicarrier wideband code division multiple access (W-CDMA), making the setup perfectly suited for studying device performance in terms of efficiency, linearity and memory effects.

-Way Doherty Amplifiers

Second-harmonic control is implemented in a balanced common-emitter configuration to facilitate frequency-independent third-order intermodulation distortion cancellation. Moreover, this circuit configuration facilitates a simultaneous match for either power and linearity or noise and linearity. Experiments demonstrated an improvement of over 15 dB in the output third-order intercept point while maintaining freedom in the choice of load and source impedance.

Active Harmonic Load–Pull With Realistic Wideband Communications Signals

This paper addresses the properties of a surface-passivated (enhanced) high-resistivity silicon (HRS) substrate for use in monolithic microwave technology. The detrimental effects of conductive surface channels and their variations across the wafer related to the local oxide and silicon/silicon-dioxide interface quality are eliminated through the formation of a thin amorphous layer at the wafer surface. Without passivation, it is found that the surface channels greatly degrade the quality of passive components in HRS by masking the excellent properties of the bulk HRS substrate and by causing a spread in parameters and peak values across the wafer. Moreover, it is seen that the surface passivation leads to excellent agreement of the characteristics of fabricated components and circuits with those predicted by electromagnetic (EM) simulation based on the bulk HRS properties. This is experimentally verified for lumped (inductors and transformers) and distributed (coplanar waveguide, Marchand balun) passive microwave components, as well as for a traveling-wave amplifier, through which also the integration of transistors on HRS and the overall parameter control at circuit level are demonstrated. The results in this paper indicate the economically important possibility to transfer microwave circuit designs based on EM simulations directly to the HRS fabrication process, thus avoiding costly redesigns.

A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers

A low-loss, low-distortion continuously tunable matching network, is demonstrated at 2 GHz in a silicon-on-glass varactor IC technology. The tuner uses an optimized varactor configuration to minimize distortion, and exhibits less than 0.5 dB loss and IM3<-50 dBc at 27 dBm output power, and tunes with a VSWR>250:1 to 1:1.

Surface-passivated high-resistivity silicon as a true microwave substrate

In this paper, we present an active harmonic load-pull system especially developed for the on-wafer linearity characterization/optimization of active devices with wideband modulated signals using the out-of-band linearization technique. Our setup provides independent control of the impedances at the baseband, fundamental, and second-harmonic frequencies presented to the input and output of the device under test. Furthermore, to enable realistic test conditions with wideband-modulated signals, the electrical delays in the load-pull system are kept as small as possible by implementing a novel loop architecture with in-phase quadrature modulators. We have achieved a phase variation of the reflection coefficient of only 5deg/MHz for both the fundamental and second-harmonic frequencies. We demonstrate the high potential of the system for the on-wafer evaluation of new technology generations by applying out-of-band linearization to heterojunction bipolar transistor (HBT) and laterally diffused metal-oxide-semiconductor (LDMOS) devices. For the HBT, we outline a game plan to obtain the optimum efficiency-linearity tradeoff. Finally, a record-high efficiency-linearity tradeoff was achieved (without digital predistortion) for an inverse class-AB operated Philips Gen 6 LDMOS device, yielding 44% efficiency at an adjacent channel power level of -45 dBc at 2.14 GHz for an IS-95 signal

Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology

This work discusses the efficiency bandwidth constrains in Doherty amplifiers. An analysis of the bandwidth limitations imposed by the impedance inverter and output capacitance of the active devices is given. Alternative wideband matching and output connection schemes for Doherty amplifiers are evaluated for their efficiency performance both at full output power, as well as, in power back-off operation. The presented theory is verified using a Doherty demonstrator amplifier, which allows independent control of the input signals for the main and peak device. The related measurements show the largest high-efficiency bandwidth reported up to date for a Doherty amplifier.