L. D. Buda-Prejbeanu

Fast current-induced domain-wall motion controlled by the Rashba effect

The propagation of magnetic domain walls induced by spin-polarized currents has launched new concepts for memory and logic devices. A wave of studies focusing on permalloy (NiFe) nanowires has found evidence for high domain-wall velocities (100 m s(-1); refs,), but has also exposed the drawbacks of this phenomenon for applications. Often the domain-wall displacements are not reproducible, their depinning from a thermally stable position is difficult and the domain-wall structural instability (Walker breakdown) limits the maximum velocity. Here, we show that the combined action of spin-transfer and spin-orbit torques offers a comprehensive solution to these problems. In an ultrathin Co nanowire, integrated in a trilayer with structural inversion asymmetry (SIA), the high spin-torque efficiency facilitates the depinning and leads to high mobility, while the SIA-mediated Rashba field controlling the domain-wall chirality stabilizes the Bloch domain-wall structure. Thus, the high-mobility regime is extended to higher current densities, allowing domain-wall velocities up to 400 m s(-1).

Domain wall tilting in the presence of the Dzyaloshinskii-Moriya interaction in out-of-plane magnetized magnetic nanotracks

We show that the Dzyaloshinskii-Moriya interaction (DMI) can lead to a tilting of the domain wall (DW) surface in perpendicularly magnetized magnetic nanotracks when DW dynamics are driven by an easy axis magnetic field or a spin polarized current. The DW tilting affects the DW dynamics for large DMI, and the tilting relaxation time can be very large as it scales with the square of the track width. The results are well explained by an extended collective coordinate model where DMI and DW tilting are included. We propose a simple way to estimate the DMI in magnetic multilayers by measuring the dependence of the DW tilt angle on a transverse static magnetic field. These results shed light on the current induced DW tilting observed recently in Co/Ni multilayers with structural inversion asymmetry.

Chirality-induced asymmetric magnetic nucleation in Pt/Co/AlOx ultrathin microstructures

The nucleation of reversed magnetic domains in Pt/Co/AlO(x) microstructures with perpendicular anisotropy was studied experimentally in the presence of an in-plane magnetic field. For large enough in-plane field, nucleation was observed preferentially at an edge of the sample normal to this field. The position at which nucleation takes place was observed to depend in a chiral way on the initial magnetization and applied field directions. A quantitative explanation of these results is proposed, based on the existence of a sizable Dzyaloshinskii-Moriya interaction in this sample. Another consequence of this interaction is that the energy of domain walls can become negative for in-plane fields smaller than the effective anisotropy field.

Amplitude and phase noise of magnetic tunnel junction oscillators

The microwave emission linewidth of spin transfer torque nano-oscillators is closely related to their phase and amplitude noise that can be extracted from the magnetoresistive voltage signal V(t) using single shot time domain techniques. Here we report on phase and amplitude noise studies for MgO based magnetic tunnel junction oscillators. The analysis of the power spectral densities allows one to separate the linear and nonlinear contributions to the phase noise, the nonlinear contribution being due to the coupling between phase and amplitude. The coupling strength as well as the amplitude relaxation rate can be directly extracted.

100 ps precessional spin-transfer switching of a planar magnetic random access memory cell with perpendicular spin polarizer

Ultrafast spin-transfer precessional switching between two stable states of a magnetic random access memory device is demonstrated in structures comprising a perpendicularly magnetized polarizing layer (PL⊥), an in-plane magnetized free layer (FL), and an in-plane magnetized analyzing layer (AL) in a PL⊥/spacer/FL/spacer/AL stack. Back and forth switching can be achieved with sub-ns current pulses of the same polarity. The spin-torque influence from the analyzer leads to an asymmetric dependence of the switching properties as a function of the current sign and initial state.

Injection locking of tunnel junction oscillators to a microwave current

Injection locking of a spin transfer nano-oscillator, based on an in-plane magnetized magnetic tunnel junction and generating the frequency f0, to an external signal of varying frequency fe is studied experimentally and with macrospin simulations. It is shown, that if the driving signal has the form of a microwave current, the locking effect is well-pronounced near fe≅2f0, but is almost completely absent near fe≅f0, confirming predictions of analytical theory. It is also shown that noise plays an important role in the locking process, causing the linewidth of the locked oscillation to substantially exceed that of the driving signal.

Spin-orbit torque magnetization switching controlled by geometry.

Magnetization reversal by an electric current is essential for future magnetic data storage technology, such as magnetic random access memories. Typically, an electric current is injected into a pillar-shaped magnetic element, and switching relies on the transfer of spin momentum from a ferromagnetic reference layer (an approach known as spin-transfer torque). Recently, an alternative technique has emerged that uses spin-orbit torque (SOT) and allows the magnetization to be reversed without a polarizing layer by transferring angular momentum directly from the crystal lattice. With spin-orbit torque, the current is no longer applied perpendicularly, but is in the plane of the magnetic thin film. Therefore, the current flow is no longer restricted to a single direction and can have any orientation within the film plane. Here, we use Kerr microscopy to examine spin-orbit torque-driven domain wall motion in Co/AlOx wires with different shapes and orientations on top of a current-carrying Pt layer. The displacement of the domain walls is found to be highly dependent on the angle between the direction of the current and domain wall motion, and asymmetric and nonlinear with respect to the current polarity. Using these insights, devices are fabricated in which magnetization switching is determined entirely by the geometry of the device.

Magnetization processes in hard Co-rich Co–Pt films with perpendicular anisotropy

We present a study of the magnetic properties and magnetization processes in hard Co-Pt (Pt∼20at.%) films. Co-rich Co-Pt films, with thickness t ranging from 5nm up to 2μm, were prepared by electrodeposition on (0001)-oriented Ru underlayers. All samples displayed strong perpendicular magnetic anisotropy and high coercivity. Virgin magnetic domain structures for varying thickness were investigated by magnetic force microscopy (MFM). The observed increase of domain width with film thickness is well understood by full two-dimensional micromagnetic computations with no adjustable parameters. The easy-axis magnetization process, as observed by measuring virgin curves by magnetometry and imaging the corresponding magnetization configurations by MFM in variable field, consists of two stages separated by a well-defined critical field, marking the onset of domain wall propagation. A thorough analysis of the out-of-plane angular dependence of the switching field points out that unpinning of domain walls is the dom...

Modulation bandwidth of spin torque oscillators under current modulation

For practical applications of spin torque nano-oscillators (STNO), one of the most critical characteristics is the speed at which an STNO responds to variations of external control parameters, such as current or/and field. Theory predicts that this speed is limited by the amplitude relaxation rate Γp that determines the timescale over which the amplitude fluctuations are damped out. In this study, this limit is verified experimentally by analyzing the amplitude and frequency noise spectra of the output voltage signal when modulating an STNO by a microwave current. In particular, it is shown that due to the non-isochronous nature of the STNO the amplitude relaxation rate Γp determines not only the bandwidth of an amplitude modulation, but also the bandwidth of a frequency modulation. The presented experimental technique will be important for the optimisation of the STNO characteristics for applications in telecommunications or/and data storage and is applicable even in the case when the STNO output signal is only several times higher than noise.

Linewidth reduction in a spin-torque nano-oscillator caused by non-conservative current-induced coupling between magnetic layers

We demonstrate by macrospin simulations that in a spin-torque nano-oscillator having synthetic antiferromagnet fixed layer, the non-conservative dynamic coupling between the free and fixed layers caused by spin-torque effect leads to a substantial reduction of the linewidth of the current-induced spin wave mode, involving oscillations in all three magnetic layers. By analysing the phase and amplitude noise extracted from the simulated signal, we prove that the obtained linewidth reduction is related to the reduction of the dimensionless non-linear amplitude-phase coupling parameter ν.