Laipan Zhu

Piezo‐Phototronic Effect Enhanced Flexible Solar Cells Based on n‐ZnO/p‐SnS Core–Shell Nanowire Array

The piezo‐phototronic effect is about the enhanced separation, transport, and recombination of the photogenerated carriers using the piezoelectric polarization charges present in piezoelectric‐semiconductor materials. Here, it is presented that the piezo‐phototronic effect can be effectively applied to improve the relative conversion efficiency of a flexible solar cell based on n‐ZnO/p‐SnS core–shell nanowire array for 37.3% under a moderate vertical pressure. The performance of the solar cell can be effectively enhanced by a gentle bending of the device, showing its potential for application in curly geometries. This study not only adds further understanding about the concept of increasing solar energy conversion efficiency via piezo‐phototronic effect, but also demonstrates the great potential of piezo‐phototronic effect in the application of large‐scale, flexible, and lightweight nanowire array solar cells.

Enhancing the Efficiency of Silicon-Based Solar Cells by the Piezo-Phototronic Effect

Although there are numerous approaches for fabricating solar cells, the silicon-based photovoltaics are still the most widely used in industry and around the world. A small increase in the efficiency of silicon-based solar cells has a huge economic impact and practical importance. We fabricate a silicon-based nanoheterostructure (p+-Si/p-Si/n+-Si (and n-Si)/n-ZnO nanowire (NW) array) photovoltaic device and demonstrate the enhanced device performance through significantly enhanced light absorption by NW array and effective charge carrier separation by the piezo-phototronic effect. The strain-induced piezoelectric polarization charges created at n-doped Si-ZnO interfaces can effectively modulate the corresponding band structure and electron gas trapped in the n+-Si/n-ZnO NW nanoheterostructure and thus enhance the transport process of local charge carriers. The efficiency of the solar cell was improved from 8.97% to 9.51% by simply applying a static compress strain. This study indicates that the piezo-phototronic effect can enhance the performance of a large-scale silicon-based solar cell, with great potential for industrial applications.

Ultrasensitive Vertical Piezotronic Transistor Based on ZnO Twin Nanoplatelet

High sensitivity of pressure/strain sensors is the key to accurately evaluating external mechanical stimuli and could become more important in future generations of human-machine interfaces and artificial skin. Here we report the study of a two-terminal piezotronic transistor based on ZnO twin nanoplatelets (TNPT). Owing to the mirror symmetrical structure of ZnO twin nanplatelet, compressive pressure-induced positive piezoelectric polarization charges created at both metal-semiconductor interfaces can simultaneously lower both Schottky barrier heights and thus significantly modulate the carrier transport. Our device exhibits the highest pressure sensitivity of 1448.08-1677.53 meV/MPa, which is more than ∼20 times larger than the highest value reported previously, and a fast response time of <5 ms. In addition, it can be used as a photodector with an ultrahigh external photoresponsivity of ∼1.45 × 104 AW-1, which is ∼105 times larger in magnitude than that of commercial UV photodetectors. The coupling between the mirror symmetrical structure and strong piezotronic effect in ZnO twin nanoplatelets may enable the development of ultrasensitive pressure/strain sensors for various applications such as artificial skin, health monitoring, and adaptive biomedical probes.

Piezotronic Effect on Rashba Spin–Orbit Coupling in a ZnO/P3HT Nanowire Array Structure

A key concept in the emerging field of spintronics is the voltage-gate control of spin precession via the effective magnetic field generated by the Rashba spin-orbit coupling (SOC). Traditional external gate voltage usually needs a power supply, which can easily bring about background noise or lead to a short circuit in measurement, especially for nanoscale spintronic devices. Here, we present a study on the circular photogalvanic effect (CPGE) in a ZnO/P3HT nanowire array structure with the device excited under oblique incidence. We demonstrate that a strong Rashba SOC is induced by the structure inversion asymmetry of the ZnO/P3HT heterointerface. We show that the Rashba SOC can be effectively tuned by inner-crystal piezo-potential created inside the ZnO nanowires instead of an externally applied voltage. The piezo-potential can not only ensure the stability of future spin-devices under a static pressure or strain but also work without the need of extra energy; hence this room-temperature generation and piezotronic effect control of spin photocurrent demonstrate a potential application in large-scale flexible spintronics in piezoelectric nanowire systems.

Ultrathin Piezotronic Transistors with 2 nm Channel Lengths

Because silicon transistors are rapidly approaching their scaling limit due to short-channel effects, alternative technologies are urgently needed for next-generation electronics. Here, we demonstrate ultrathin ZnO piezotronic transistors with a ∼2 nm channel length using inner-crystal self-generated out-of-plane piezopotential as the gate voltage to control the carrier transport. This design removes the need for external gate electrodes that are challenging at nanometer scale. These ultrathin devices exhibit a strong piezotronic effect and excellent pressure-switching characteristics. By directly converting mechanical drives into electrical control signals, ultrathin piezotronic devices could be used as active nanodevices to construct the next generation of electromechanical devices for human-machine interfacing, energy harvesting, and self-powered nanosystems.

Piezo-phototronic Effect Enhanced Photodetector Based on CH3NH3PbI3 Single Crystals

Piezoelectric organic-inorganic lead halide perovskites have recently attracted much attention in the field of optoelectronic devices. However, their piezoelectric properties as a possible way to modulate device performances have rarely been reported. Here, we study experimentally a photodetector based on CH3NH3PbI3(MAPbI3) single crystals, whose performance is effectively modulated via an emerging effect-the piezo-phototronic effect, which is to use the piezoelectric polarization charges to tune the optoelectronic processes at the interface. A piezoelectric coefficient of 10.81 pm/V of the CH3NH3PbI3 single crystal is obtained. Under 680 nm laser illumination with a power density of 3.641 mW/cm2 and at an external bias of 2 V, compared to the case without straining, the light current of the photodetector is enhanced by ∼120% when a 43.48 kPa compressive pressure is applied. The response speed of the photocurrent is 3 and 2 times faster than the cases without applying pressure for the light-on and light-off states, respectively. This work proves that the performance of the photodetector based on MAPbI3 single crystals can be effectively enhanced by the piezo-phototronic effect, providing a good method for optimizing the performance of future perovskite-based optoelectronic devices.