Libo Chen

p‐Type MoS2 and n‐Type ZnO Diode and Its Performance Enhancement by the Piezophototronic Effect

A plasma-induced p-type MoS2 flake and n-type ZnO film diode, which exhibits an excellent rectification ratio, is demonstrated. Under 365 nm optical irradiation, this p-n diode shows a strong photoresponse with an external quantum efficiency of 52.7% and a response time of 66 ms. By increasing the pressure on the junction to 23 MPa, the photocurrent can be enhanced by a factor of four through the piezophototronic effect.

Large-Area All-Textile Pressure Sensors for Monitoring Human Motion and Physiological Signals

Wearable pressure sensors, which can perceive and respond to environmental stimuli, are essential components of smart textiles. Here, large-area all-textile-based pressure-sensor arrays are successfully realized on common fabric substrates. The textile sensor unit achieves high sensitivity (14.4 kPa-1 ), low detection limit (2 Pa), fast response (≈24 ms), low power consumption (<6 µW), and mechanical stability under harsh deformations. Thanks to these merits, the textile sensor is demonstrated to be able to recognize finger movement, hand gestures, acoustic vibrations, and real-time pulse wave. Furthermore, large-area sensor arrays are successfully fabricated on one textile substrate to spatially map tactile stimuli and can be directly incorporated into a fabric garment for stylish designs without sacrifice of comfort, suggesting great potential in smart textiles or wearable electronics.

Strain-Gated Field Effect Transistor of a MoS2–ZnO 2D–1D Hybrid Structure

Two-dimensional (2D) molybdenum disulfide (MoS2) is an exciting material due to its unique electrical, optical, and piezoelectric properties. Owing to an intrinsic band gap of 1.2-1.9 eV, monolayer or a-few-layer MoS2 is used for fabricating field effect transistors (FETs) with high electron mobility and on/off ratio. However, the traditional FETs are controlled by an externally supplied gate voltage, which may not be sensitive enough to directly interface with a mechanical stimulus for applications in electronic skin. Here we report a type of top-pressure/force-gated field effect transistors (PGFETs) based on a hybrid structure of a 2D MoS2 flake and 1D ZnO nanowire (NW) array. Once an external pressure is applied, the piezoelectric polarization charges created at the tips of ZnO NWs grown on MoS2 act as a gate voltage to tune/control the source-drain transport property in MoS2. At a 6.25 MPa applied stimulus on a packaged device, the source-drain current can be tuned for ∼25%, equivalent to the results of applying an extra -5 V back gate voltage. Another type of PGFET with a dielectric layer (Al2O3) sandwiched between MoS2 and ZnO also shows consistent results. A theoretical model is proposed to interpret the received data. This study sets the foundation for applying the 2D material-based FETs in the field of artificial intelligence.

Piezo‐Phototronic Effect Enhanced Flexible Solar Cells Based on n‐ZnO/p‐SnS Core–Shell Nanowire Array

The piezo‐phototronic effect is about the enhanced separation, transport, and recombination of the photogenerated carriers using the piezoelectric polarization charges present in piezoelectric‐semiconductor materials. Here, it is presented that the piezo‐phototronic effect can be effectively applied to improve the relative conversion efficiency of a flexible solar cell based on n‐ZnO/p‐SnS core–shell nanowire array for 37.3% under a moderate vertical pressure. The performance of the solar cell can be effectively enhanced by a gentle bending of the device, showing its potential for application in curly geometries. This study not only adds further understanding about the concept of increasing solar energy conversion efficiency via piezo‐phototronic effect, but also demonstrates the great potential of piezo‐phototronic effect in the application of large‐scale, flexible, and lightweight nanowire array solar cells.

Self-powered acoustic source locator in underwater environment based on organic film triboelectric nanogenerator

Detecting/sensing targets underwater has very important applications in environmental study, civil engineering and national security. In this paper, an organic-film based triboelectric nanogenerator (TENG) has been successfully demonstrated for the first time as a self-powered and high sensitivity acoustic sensor to detect underwater targets at low frequencies around 100 Hz. This innovative, cost-effective, simple-design TENG consists of a thin-film-based Cu electrode and a polytetrafluoroethylene (PTFE) film with nanostructures on its surfaces. On the basis of the coupling effect between triboelectrification and electrostatic induction, the sensor generates electrical output signals in response to incident sound waves. Operating at a resonance frequency of 110 Hz, under an acoustic pressure of 144.2 dBSPL, the maximum open-circuit voltage and short-circuit current of the generator can respectively reach 65 V and 32 μA underwater. The directional dependence pattern has a bi-directional shape with a total response angle of 60°. Its sensitivity is higher than −185 dB in the frequency range from 30 Hz to 200 Hz. The highest sensitivity is −146 dB at resonance frequency. The three-dimensional coordinates of an acoustic source were identified by four TENGs, self-powered active sensors, and the location of the acoustic source was determined with an error about 0.2 m. This study not only expands the application fields of TENGs from the atmosphere to water, but also shows the TENG is a promising acoustic source locator in underwater environments.

Enhancing the Efficiency of Silicon-Based Solar Cells by the Piezo-Phototronic Effect

Although there are numerous approaches for fabricating solar cells, the silicon-based photovoltaics are still the most widely used in industry and around the world. A small increase in the efficiency of silicon-based solar cells has a huge economic impact and practical importance. We fabricate a silicon-based nanoheterostructure (p+-Si/p-Si/n+-Si (and n-Si)/n-ZnO nanowire (NW) array) photovoltaic device and demonstrate the enhanced device performance through significantly enhanced light absorption by NW array and effective charge carrier separation by the piezo-phototronic effect. The strain-induced piezoelectric polarization charges created at n-doped Si-ZnO interfaces can effectively modulate the corresponding band structure and electron gas trapped in the n+-Si/n-ZnO NW nanoheterostructure and thus enhance the transport process of local charge carriers. The efficiency of the solar cell was improved from 8.97% to 9.51% by simply applying a static compress strain. This study indicates that the piezo-phototronic effect can enhance the performance of a large-scale silicon-based solar cell, with great potential for industrial applications.

Ultrasensitive Vertical Piezotronic Transistor Based on ZnO Twin Nanoplatelet

High sensitivity of pressure/strain sensors is the key to accurately evaluating external mechanical stimuli and could become more important in future generations of human-machine interfaces and artificial skin. Here we report the study of a two-terminal piezotronic transistor based on ZnO twin nanoplatelets (TNPT). Owing to the mirror symmetrical structure of ZnO twin nanplatelet, compressive pressure-induced positive piezoelectric polarization charges created at both metal-semiconductor interfaces can simultaneously lower both Schottky barrier heights and thus significantly modulate the carrier transport. Our device exhibits the highest pressure sensitivity of 1448.08-1677.53 meV/MPa, which is more than ∼20 times larger than the highest value reported previously, and a fast response time of <5 ms. In addition, it can be used as a photodector with an ultrahigh external photoresponsivity of ∼1.45 × 104 AW-1, which is ∼105 times larger in magnitude than that of commercial UV photodetectors. The coupling between the mirror symmetrical structure and strong piezotronic effect in ZnO twin nanoplatelets may enable the development of ultrasensitive pressure/strain sensors for various applications such as artificial skin, health monitoring, and adaptive biomedical probes.

Self-Powered Random Number Generator Based on Coupled Triboelectric and Electrostatic Induction Effects at the Liquid–Dielectric Interface

Modern cryptography increasingly employs random numbers generated from physical sources in lieu of conventional software-based pseudorandom numbers, primarily owing to the great demand of unpredictable, indecipherable cryptographic keys from true random numbers for information security. Thus, far, the sole demonstration of true random numbers has been generated through thermal noise and/or quantum effects, which suffers from expensive and complex equipment. In this paper, we demonstrate a method for self-powered creation of true random numbers by using triboelectric technology to collect random signals from nature. This random number generator based on coupled triboelectric and electrostatic induction effects at the liquid-dielectric interface includes an elaborately designed triboelectric generator (TENG) with an irregular grating structure, an electronic-optical device, and an optical-electronic device. The random characteristics of raindrops are harvested through TENG and consequently transformed and converted by electronic-optical device and an optical-electronic device with a nonlinear characteristic. The cooperation of the mechanical, electrical, and optical signals ensures that the generator possesses complex nonlinear input-output behavior and contributes to increased randomness. The random number sequences are deduced from final electrical signals received by an optical-electronic device using a familiar algorithm. These obtained random number sequences exhibit good statistical characteristics, unpredictability, and unrepeatability. Our study supplies a simple, practical, and effective method to generate true random numbers, which can be widely used in cryptographic protocols, digital signatures, authentication, identification, and other information security fields.

Piezotronic Effect on Rashba Spin–Orbit Coupling in a ZnO/P3HT Nanowire Array Structure

A key concept in the emerging field of spintronics is the voltage-gate control of spin precession via the effective magnetic field generated by the Rashba spin-orbit coupling (SOC). Traditional external gate voltage usually needs a power supply, which can easily bring about background noise or lead to a short circuit in measurement, especially for nanoscale spintronic devices. Here, we present a study on the circular photogalvanic effect (CPGE) in a ZnO/P3HT nanowire array structure with the device excited under oblique incidence. We demonstrate that a strong Rashba SOC is induced by the structure inversion asymmetry of the ZnO/P3HT heterointerface. We show that the Rashba SOC can be effectively tuned by inner-crystal piezo-potential created inside the ZnO nanowires instead of an externally applied voltage. The piezo-potential can not only ensure the stability of future spin-devices under a static pressure or strain but also work without the need of extra energy; hence this room-temperature generation and piezotronic effect control of spin photocurrent demonstrate a potential application in large-scale flexible spintronics in piezoelectric nanowire systems.

Tribotronic transistor sensor for enhanced hydrogen detection

Hydrogen detection with a high sensitivity is necessary for preventing potential explosions and fire. In this study, a novel ZnO tribotronic transistor is developed by coupling a ZnO field effect transistor (FET) and triboelectric nanogenerator in free-standing mode and is used as a sensor for hydrogen detection at room temperature. Tribotronic modulated performances of the hydrogen sensor are demonstrated by investigating its output characteristics at different sliding distances and hydrogen concentrations. By applying an external mechanical force to the device for sliding electrification, the detection sensitivity of the ZnO tribotronic transistor sensor is improved, with a significant enhancement achieved in output current by 62 times at 500 ppm hydrogen and 1 V bias voltage. This study demonstrates an extension of the applications of emerging tribotronics for gas detection and a prospective approach to improve the performance of the hydrogen sensor via human-interfacing.