Laura Lazzarini

Strain relaxation in graded composition InxGa1-xAs/GaAs buffer layers

A model to compute the strain relaxation rate in InxGa1−xAs/GaAs single layers has been tested on several compositionally graded buffer layers. The existence of a critical elastic energy has been assumed as a criterion for the generation of new misfit dislocations. The surface strain accuracy results are within 2.5×10−4. The influence of different grading laws and growth conditions on residual strain, threading dislocation density, misfit dislocation confinement, and surface morphology has been studied. The probability of dislocation interaction and work hardening has been shown to strongly influence the mobility and the generation rate of the dislocations. Optimization of the growth conditions removes residual strain asymmetries and smoothes the surface roughness.

Unpredicted Nucleation of Extended Zinc Blende Phases in Wurtzite ZnO Nanotetrapod Arms

Tailoring the structural and electronic properties of 3D nanostructures via bottom-up techniques would pave the way for novel low-cost applications. One of such possibilities is offered by ZnO branched nanostructures like tetrapods, that have recently attracted attention for nanodevice applications from nanoelectronics to drug delivery. The conventional picture is that ZnO arms are thermodynamically stable only in the wurtzite phase. Here, we provide the first experimental evidence of unpredicted extended zinc blend phases (50-60 nm long) embedded in the arms of ZnO wurtzite tetrapods. In particular, decisive evidence is obtained from the one-to-one correlation between high lateral resolution cathodoluminescence spectroscopy, monochromatic contrast maps, and atomic resolution transmission electron microscopy images of ZnO single TPs. This observation is not specific to ZnO and can have a general validity for the understanding of the nucleation mechanisms in semiconducting 3D nanostructures for device applications.

Antiphase disorder in GaAs/Ge heterostructures for solar cells

Antiphase disorder in metal organic vapour phase epitaxy grown GaAs/(100)Ge heterostructures has been studied both in as-grown materials and in GaAs solar cells by chemical etching, transmission electron microscopy, and cathodoluminescence. All the samples are single domains at the surface due to the self-annihilation of antiphase domains whose size decreases as the misorientation angle increases. Completely antiphase domain-free epitaxy has been achieved for substrate miscuts greater than 3 degrees off towards [111]. A reversal in sublattice location has been found in the GaAs layers varying the misorientation angle and the growth temperature. A model to explain this result has been proposed based on the role of surface steps in the nucleation process. Strong interaction between antiphase boundaries and misfit dislocations has been found in all the heterostructures. In solar cells antiphase domains have been observed in high densities in the initial layer of GaAs deposited on Ge. The successful realisation of high efficiency solar cells is due to the overgrowth of these domains by single phase material over most of the wafer area.

Extended functionality of ZnO nanotetrapods by solution-based coupling with CdS nanoparticles

Coupled nanostructures with “spotted” and “core–shell” morphologies have been obtained by a controlled heterogeneous nucleation of cadmium sulfide nanoparticles (CdS-NPs) onto the surface of zinc oxide nanotetrapods (ZnO-TPs). This result has been obtained by means of a modified chemical bath deposition reaction, without the need of any surfactant and surface passivating agents. The coupled nanostructure has been demonstrated to form an active p–n type-II heterojunction, clearly affecting the functional properties of ZnO nanostructures, as in gas-sensing or photocatalysis applications.

Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires.

The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.

Low-temperature germanium thin films on silicon

We discuss thermal evaporation of Germanium thin films as a suitable route to realizing near-infrared detectors integrated on a Silicon platform. We study the structural properties of samples grown at various substrate temperatures by X-ray diffraction and transmission electron microscopy, showing that Ge thin films are amorphous when deposited below 225°C, mono-crystalline between 225 and 400°C, poly-crystalline above 450°C. We further investigate their optical and electrical properties using differential optical absorption spectroscopy, Hall and photocurrent measurements. Finally, with the evaporated Ge thin films we demonstrate near-infrared photodiodes with low dark current density and good responsivity at 1.55 μm.

Self-aggregated InAs quantum dots in GaAs

We present a detailed study, both structural and optical, of GaAs/InAs/GaAs heterostructures for InAs nominal coverages (L) ranging from 0.6 to 3 ML. Planar transmission electron microscopy (TEM) provides direct evidence of the presence of InAs quantum dots (QDs) for all values of L, with an increase in their density at high values of L. Transverse TEM shows also that those QDs have mostly small base angles. Accordingly, the evolution of the optical properties of InAs/GaAs is investigated by photoluminescence (PL) and PL excitation measurements (PLE). A broad PL band is observed in all samples, which is ascribed to the recombination of heavy-hole excitons in the InAs quantum dots, observed with TEM. For thin coverages (L⩽1.6ML), a narrow PL band is also observed, which is attributed to recombination of heavy-hole excitons in a two-dimensional (2D) InAs layer. The two bands shift to lower energy for increasing L. For L⩾1.6 ML, the QD band has a faster shift and exhibits a complex structure, while the excit...

Visible and infra-red light emission in boron-doped wurtzite silicon nanowires.

Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires measured by cathodoluminescence spectroscopy at room temperature. A visible emission, peaked above 1.5 eV, and a near infra-red emission at 0.8 eV correlate respectively to the direct transition at the Γ point and to the indirect band-gap of wurtzite silicon. We find additional intense emissions due to boron intra-gap states in the short wavelength infra-red range. We present the evolution of the light emission properties as function of the boron doping concentration and the growth temperature.

Preparing the way for doping wurtzite silicon nanowires while retaining the phase.

It is demonstrated that boron-doped nanowires have predominantly long-term stable wurtzite phase while the majority of phosphorus-doped ones present diamond phase. A simplified model based on the different solubility of boron and phosphorus in gold is proposed to explain their diverse effectiveness in retaining the wurtzite phase. The wurtzite nanowires present a direct transition at the Γ point at approximately 1.5 eV while the diamond ones have a predominant emission around 1.1 eV. The aforementioned results are intriguing for innovative solar cell devices.

Nanoscale mapping of plasmon and exciton in ZnO tetrapods coupled with Au nanoparticles.

Metallic nanoparticles can be used to enhance optical absorption or emission in semiconductors, thanks to a strong interaction of collective excitations of free charges (plasmons) with electromagnetic fields. Herein we present direct imaging at the nanoscale of plasmon-exciton coupling in Au/ZnO nanostructures by combining scanning transmission electron energy loss and cathodoluminescence spectroscopy and mapping. The Au nanoparticles (~30 nm in diameter) are grown in-situ on ZnO nanotetrapods by means of a photochemical process without the need of binding agents or capping molecules, resulting in clean interfaces. Interestingly, the Au plasmon resonance is localized at the Au/vacuum interface, rather than presenting an isotropic distribution around the nanoparticle. On the contrary, a localization of the ZnO signal has been observed inside the Au nanoparticle, as also confirmed by numerical simulations.