Lena Zavyalova

Water immersion optical lithography at 193 nm

Historically, the application of immersion optics to microlitho-graphy has not been seriously pursued because of the alternative technologies available. As the challenges of shorter wavelength become increasingly difficult, immersion imaging becomes more feasible. We present results from research into 193-nm excimer laser immersion lithography at extreme propagation angles. This is being carried out in a fluid that is most compatible in a manufacturable process, namely water. By designing a system around the optical properties of water, we are able to image with wavelengths down to 193 nm. Measured absorption is below 0.50 cm−1 at 185 nm and below 0.05 cm−1 at 193 nm. Furthermore, through the development of oblique angle imaging, numerical apertures approaching 1.0 in air and 1.44 in water are feasible. The refractive index of water at 193 nm allows for exploration of the following: k1 values near 0.25 leading to half-pitch resolution approaching 35 nm at a 193-nm wavelength; polarization effects at oblique angles (extreme NA); immersion and photoresist interactions with polarization; immersion fluid composition, temperature, flow, and micro-bubble influence on optical properties (index, absorption, aberration, birefringence); mechanical requirements for imaging, scanning, and wafer transport in a water media; and synthesizing conventional projection imaging via interferometric imaging.

Approaching the numerical aperture of water immersion lithography at 193-nm

As immersion nanolithography gains acceptance for next generation device applications, experimental data becomes increasingly important. The behavior of resist materials, fluids, coatings, sources, and optical components in the presence of a water immersion media presents conditions unique compared to convention “dry” lithography. Several groups have initiated fundamental studies into the imaging, fluids, contamination, and integration issues involved with water immersion lithography at 193nm. This paper will present the status and results of the next stage of the development efforts carried out at RIT. The status of two systems are presented; a small field projection microstepper utilizing a 1.05 catadioptric immersion objective lens and a 0.50 to 1.26NA interferometric immersion exposure system based on a compact Talbot prism lens design. Results of the fundamental resolution limits of resist materials and of imaging optics are presented. Additionally, an exploration into the benefits of increasing the refractive index of water is addressed through the use of sulfate and phosphate additives. The potential of KrF, 248nm immersion lithography is also presented with experimental resist imaging results.

Benefiting from polarization - effects on high-NA imaging

The onset of lithographic technology involving extreme numerical aperture (NA) values introduces critical technical issues that are now receiving particular attention. Projection lithography with NA values above 0.90 is necessary for future generation devices. The introduction of immersion lithography enables even larger angles, resulting in NA values of 1.2 and above. The imaging effects from oblique angles, electric field polarization, optical interference, optical reflection, and aberration can be significant. This paper addresses polarization considerations at critical locations in the optical path of a projection system, namely in the illuminator, at the mask, and in the photoresist. Several issues are addressed including TE and azimuthal polarized illumination, wire grid polarization effects for real thin film mask materials, and multilayer resist AR coatings for high NA and polarization.

Immersion Microlithography at 193 nm with a Talbot Prism Interferometer

A Talbot interference immersion lithography system that uses a compact prism is presented. The use of a compact prism allows the formation of a fluid layer between the optics and the image plane, enhancing the resolution. The reduced dimensions of the system alleviate coherence requirements placed on the source, allowing the use of a compact ArF excimer laser. Photoresist patterns with a half pitch of 45 nm were formed at an effective NA of 1.05. In addition, a variable NA immersion interference system was used to achieve an effective NA of 1.25. The smallest half-pitch of the photoresist pattern produced with this system was 38 nm.

Illumination pupil filtering using modified quadrupole apertures

Off-axis illumination schemes have been developed that can enhance both the resolution and focal depth performance for an optical exposure tool. One approach introduced modifies the illumination profile, filling the condenser lens pupil with weak Gaussian quadrupoles where energy is distributed within and between poles. This method has demonstrated better control of DOF and proximity effect for a variety of feature types. Other possibilities also exist. Presented here are approaches to illumination modification through use of condenser lens masking apertures, fabricated as attenuating fused silica reticles which are inserted at the lens pupil plane. Application of this technique for use in high NA 248 nm and 193 nm exposure tools is shown. For each case, optimization of illumination profiles has been conducted. Optimized source files have been converted to halftone (dithered) masking files for electron beam patterning on fused silica with chromium and anti-reflective (AR) films. Analysis of these modified illumination techniques in terms of resolution, focal depth, throughput, and aberration performance is also presented.

25 nm immersion lithography at 193 nm wavelength

The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of the materials involved. At oblique collection angles, the numerical aperture of an optical system is determined by nsin(θ) , where n is the lowest material refractive index (in the absence of any refractive power through curvature). For 193nm water immersion lithography, the fluid is the limiting material, with a refractive index of near 1.44, followed by the lens material (if planar) with a refractive index near 1.56, and the photoresist, with a refractive index near 1.75. A critical goal for immersion imaging improvement is to first increase the refractive indices of the weakest link, namely the fluid or the lens material. This paper will present an approach to immersion lithography that will allow for the exploration into the extreme limits of immersion lithography by eliminating the fluid altogether. By using a solid immersion lithography (SIL) approach, we have developed a method to contact the last element of an imaging system directly to the photoresist. Furthermore, by fabricating this last element as an aluminum oxide (sapphire) prism, we can increase its refractive index to a value near 1.92. The photoresist becomes the material with the lowest refractive index and imaging becomes possible down to 28nm for a resist index of 1.75 (and 25nm for a photoresist with a refractive index of 1.93). Imaging is based on two-beam Talbot interference of a phase grating mask, illuminated with highly polarized 193nm ArF radiation. Additionally, a roadmap is presented to show the possible extension of 193nm lithography to the year 2020.

Plasma reactive ion etching of 193 nm attenuated phase shift mask materials

This article gives details on plasma etch process development for potential attenuated phase shift masking materials for use at 193 nm. Masking films investigated include materials based on aluminum nitride, zirconium nitride, molybdenum–silicon oxide, tantalum–silicon nitride, and tantalum–silicon oxide. A variety of halogenated etch plasmas were investigated, including fluorine-based chemistries (CF4 and SF6) and chlorine-based chemistries (Cl2, CCl4) combined with oxygen, argon, and hydrogen. Thin films of TaN, MoSiO, SixNy, and TaO that allow for sufficient volatility in fluorine plasma and processes using SF6 were chosen for optimization. Fluorides of aluminum and zirconium exhibit very low vapor pressure so Cl2+Ar mixtures were chosen for study. Al and Zr chlorides can be made volatile but ion assistance is generally needed to produce sufficiently high etch rates. Because of this, selectivity to resist is generally poor. Of all the materials evaluated, attenuated phase shift mask films of TaN/Si3N4 ...

Mask-induced polarization

The objective of this paper is to study the polarization induced by mask structures. Rigorous coupled-wave analysis (RCWA) was used to study the interaction of electromagnetic waves with mask features. RCWA allows the dependence of polarization effects of various wavelengths of radiation on grating pitch, profile, material, and thickness to be studied. The results show that for the five different mask materials examined, the material properties, mask pitch, and illumination all have a large influence on how the photomask polarizes radiation.

In-situ aberration monitoring using phase wheel targets

Aberration metrology is critical to the manufacture of quality lithography lenses in order to meet strict optical requirements. Additionally, it is becoming increasingly important to be able to measure and monitor lens performance in an IC production environment on a regular basis. The lithographer needs to understand the influence of aberrations on imaging and any changes that may occur in the aberration performance of the lens between assembly and application, and over the course of using an exposure tool. This paper will present a new method for the detection of lens aberrations that may be employed during standard lithography operation. The approach allows for the detection of specific aberration types and trends, as well as levels of aberration, though visual inspection of high resolution images of resist patterns and fitting of the aberrated wavefront. The approach consists of a test target made up of a 180-degree phase pattern array in a “phase wheel” configuration. The circular phase regions in the phase wheel are arranged so that their response to lens aberration is interrelated and the regions respond uniquely to specific aberrations, depending on their location within the target. This test method offers an advantage because of the sensitivity to particular aberration types, the unique response of multiple zones of the test target to aberrations, and the ease with which aberrations can be distinguished. The method of lens aberration detection is based on the identification of the deviations that occur between the images printed with the phase wheel target and images that would be produced in the absence of aberration. This is carried out through the use of lithography simulation, where simulated images can be produced without aberration and with various levels of lens aberration. Comparisons of printed resist images to simulated resist images are made while the values of the coefficients for the primary Zernike aberrations are varied.

Design and development of thin film materials for 157-nm and VUV wavelengths: APSM, binary masking, and optical coatings applications

As optical lithography below 193 nm is explored, materials issues become more challenging. Thin film coatings that are sufficient for use at wavelengths near or above 200 nm are more likely than not to be problematic at 157 nm, 126 nm, or other potential VUV wavelengths. The situation is a concern for optical coatings, masking films, and for resist/substrate reflectivity control. Potential solutions for several film types are presented, which have been deposited and optically characterized for use as attenuated phase shift masking films, binary masking films, and optical coatings for use at 157 nm.