Leonid Lichtenstein

The Atomic Structure of a Metal-Supported Vitreous Thin Silica Film**

Clear as glass: The atomic structure of a metal-supported vitreous thin silica film was resolved using low-temperature scanning tunneling microscopy (STM). Based on the STM image, a model was constructed and the atomic arrangement of the thin silica glass determined (see picture). The total pair correlation function of the structural model shows good agreement with diffraction experiments performed on vitreous silica.

Thin silica films on Ru(0001): monolayer, bilayer and three-dimensional networks of [SiO4] tetrahedra

The atomic structure of thin silica films grown over a Ru(0001) substrate was studied by X-ray photoelectron spectroscopy, infrared reflection absorption spectroscopy, low energy electron diffraction, helium ion scattering spectroscopy, CO temperature programmed desorption, and scanning tunneling microscopy in combination with density functional theory calculations. The films were prepared by Si vapor deposition and subsequent oxidation at high temperatures. The silica film first grows as a monolayer of corner-sharing [SiO(4)] tetrahedra strongly bonded to the Ru(0001) surface through the Si-O-Ru linkages. At increasing amounts of Si, the film forms a bilayer of corner-sharing [SiO(4)] tetrahedra which is weakly bonded to Ru(0001). The bilayer film can be grown in either the crystalline or vitreous state, or both coexisting. Further increasing the film thickness leads to the formation of vitreous silica exhibiting a three-dimensional network of [SiO(4)]. The principal structure of the films can be monitored by infrared spectroscopy, as each structure shows a characteristic vibrational band, i.e., ∼1135 cm(-1) for a monolayer film, ∼1300 cm(-1) for the bilayer structures, and ∼1250 cm(-1) for the bulk-like vitreous silica.

Charge percolation pathways guided by defects in quantum dot solids.

Charge hopping and percolation in quantum dot (QD) solids has been widely studied, but the microscopic nature of the percolation process is not understood or determined. Here we present the first imaging of the charge percolation pathways in two-dimensional PbS QD arrays using Kelvin probe force microscopy (KPFM). We show that under dark conditions electrons percolate via in-gap states (IGS) instead of the conduction band, while holes percolate via valence band states. This novel transport behavior is explained by the electronic structure and energy level alignment of the individual QDs, which was measured by scanning tunneling spectroscopy (STS). Chemical treatments with hydrazine can remove the IGS, resulting in an intrinsic defect-free semiconductor, as revealed by STS and surface potential spectroscopy. The control over IGS can guide the design of novel electronic devices with impurity conduction, and photodiodes with controlled doping.

Ultrathin Silica Films: The Atomic Structure of Two‐Dimensional Crystals and Glasses

For the last 15 years, we have been studying the preparation and characterization of ordered silica films on metal supports. We review the efforts so far, and then discuss the specific case of a silica bilayer, which exists in a crystalline and a vitreous variety, and puts us into a position to investigate, for the first time, the real space structure (AFM/STM) of a two-dimensional glass and its properties. We show that pair correlation functions determined from the images of this two-dimensional glass are similar to those determined by X-ray and neutron scattering from three-dimensional glasses, if the appropriate sensitivity factors are taken into account. We are in a position, to verify, for the first time, a model of the vitreous silica structure proposed by William Zachariasen in 1932. Beyond this, the possibility to prepare the crystalline and the glassy structure on the same support allows us to study the crystal-glass phase transition in real space. We, finally, discuss possibilities to use silica films to start investigating related systems such as zeolites and clay films. We also mention hydroxylation of the silica films in order to adsorb metal atoms modeling heterogenized homogeneous catalysts.

Molecular Oxygen Induced in-Gap States in PbS Quantum Dots.

Artificial solids composed of semiconductor quantum dots (QDs) are being developed for large-area electronic and optoelectronic applications, but these materials often have defect-induced in-gap states (IGS) of unknown chemical origin. Here we performed scanning probe based spectroscopic analysis and density functional theory calculations to determine the nature of such states and their electronic structure. We found that IGS near the valence band occur frequently in the QDs except when treated with reducing agents. Calculations on various possible defects and chemical spectroscopy revealed that molecular oxygen is most likely at the origin of these IGS. We expect this impurity-induced deep IGS to be a common occurrence in ionic semiconductors, where the intrinsic vacancy defects either do not produce IGS or produce shallow states near band edges. Ionic QDs with surface passivation to block impurity adsorption are thus ideal for high-efficiency optoelectronic device applications.

Defects in oxide surfaces studied by atomic force and scanning tunneling microscopy

Summary Surfaces of thin oxide films were investigated by means of a dual mode NC-AFM/STM. Apart from imaging the surface termination by NC-AFM with atomic resolution, point defects in magnesium oxide on Ag(001) and line defects in aluminum oxide on NiAl(110), respectively, were thoroughly studied. The contact potential was determined by Kelvin probe force microscopy (KPFM) and the electronic structure by scanning tunneling spectroscopy (STS). On magnesium oxide, different color centers, i.e., F0, F+, F2+ and divacancies, have different effects on the contact potential. These differences enabled classification and unambiguous differentiation by KPFM. True atomic resolution shows the topography at line defects in aluminum oxide. At these domain boundaries, STS and KPFM verify F2+-like centers, which have been predicted by density functional theory calculations. Thus, by determining the contact potential and the electronic structure with a spatial resolution in the nanometer range, NC-AFM and STM can be successfully applied on thin oxide films beyond imaging the topography of the surface atoms.

Atomic structure of surface defects in alumina studied by dynamic force microscopy: strain-relief-, translation- and reflection-related boundaries, including their junctions

We present an extensive atomic resolution frequency modulation dynamic force microscopy study of ultrathin aluminium oxide on a single crystalline NiAl(110) surface. One-dimensional surface defects produced by domain boundaries have been resolved. Images are presented for reflection domain boundaries (RDBs), four different types of antiphase domain boundaries, a nucleation-related translation domain boundary and also domain boundary junctions. New structures and aspects of the boundaries and their network are revealed and merged into a comprehensive picture of the defect arrangements. The alumina film also covers the substrate completely at the boundaries and their junctions and follows the structural building principles found in its unit cell. This encompasses square and rectangular groups of surface oxygen sites. The observed structural elements can be related to the electronic signature of the boundaries and therefore to the electronic defects associated with the boundaries. A coincidence site lattice predicted for the RDBs is in good agreement with experimental data. With 6 = 19 it can be considered to be of low-sigma

Topological Investigation of Two-dimensional Amorphous Materials

Abstract Real space image data of two-dimensional amorphous networks have become available in high resolution. We review a number of systems regarding ring size distribution, pair correlation function and characteristic structural clusters. We present similarities and differences that can help identify general descriptors for amorphousness.

Probing the properties of metal–oxide interfaces: silica films on Mo and Ru supports

The influence of metal-oxide interactions on the workfunction and band alignment in thin oxide films is investigated for silica mono- and bilayers grown on Mo(112) and Ru(0001) supports. By analyzing the position of field-emission resonances and the Kelvin-probe signal deduced from conductance and force spectroscopy, we have identified a substantial lowering of the workfunction in the monolayer films, with the oxide bands shifting accordingly. We explain this observation with a stronger coupling and a shorter binding length of the silica monolayer to the metal substrate, which removes the effect of electron spill-out, produces a positive interface dipole and reduces the workfunction of the system. In contrast, the van der Waals bound bilayer film interacts only weakly with the Ru support, conserving the effect of electron spill-out and keeping the workfunction high. Direct evidence for the relevance of interface interactions comes from experiments on buckled silica films, for which regular workfunction modulations are revealed that follow the topographic height of the film above the metal surface.

Influence of Step Geometry on the Reconstruction of Stepped Platinum Surfaces under Coadsorption of Ethylene and CO

We demonstrate the critical role of the specific atomic arrangement at step sites in the restructuring processes of low-coordinated surface atoms at high adsorbate coverage. By using high-pressure scanning tunneling microscopy (HP-STM) and ambient-pressure X-ray photoelectron spectroscopy (AP-XPS), we have investigated the reconstruction of Pt(332) (with (111)-oriented triangular steps) and Pt(557) surfaces (with (100)-oriented square steps) in the mixture of CO and C2H4 in the Torr pressure range at room temperature. CO creates Pt clusters at the step edges on both surfaces, although the clusters have different shapes and densities. A subsequent exposure to a similar partial pressure of C2H4 partially reverts the clusters on Pt(332). In contrast, the cluster structure is barely changed on Pt(557). These different reconstruction phenomena are attributed to the fact that the 3-fold (111)-step sites on Pt(332) allows for adsorption of ethylidyne-a strong adsorbate formed from ethylene-that does not form on the 4-fold (100)-step sites on Pt(557).