Louis N. Hutter
Texas Instruments
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Publication
Featured researches published by Louis N. Hutter.
international symposium on power semiconductor devices and ic s | 2001
Taylor R. Efland; D. Abbott; V. Arellano; Milton L. Buschbom; W. Chang; C. Hoffart; Louis N. Hutter; Quang Mai; I. Nishimura; Sameer Pendharkar; M. Pierce; C.C. Shen; C.M. Thee; H. Vanhorn; C. Williams
A metal system consisting of thick electroplated copper leads having a top plating of nickel and palladium cap are integrated on top of power ICs to form a bondable LeadFrameOnChip surface.
applied power electronics conference | 1992
John P. Erdeljac; B. Todd; Louis N. Hutter; K. Wagensohner; W. Bucksch
A 2.0 mu m BiCMOS process incorporating 30 V bipolar, 5-50 V CMOS, precision analog elements, and 45 V power DMOS transistors with 2.0 m Omega cm/sup 2/ R/sub DSON/ area is presented. The process is compatible with a mature mixed-signal application-specific integrated circuit (ASIC) cell library and offers fully isolated CMOS devices, providing an effective solution for intelligent analog/digital/power applications with inductive loads. This technology has been applied to the design of a 2.5 A H-bridge with supporting logic and analog control circuitry.<<ETX>>
international symposium on power semiconductor devices and ic's | 1997
Marco Corsi; John P. Erdeljac; Louis N. Hutter; J. Sanders
PCMCIA cards are used to add a variety of features to portable computers-modems, LANs, GPS, etc. Some means of switching power to the inserted PCMCIA card is required: this paper describes the design and process technology for a second-generation, single-chip, dual-slot PCMCIA power interface switch.
bipolar/bicmos circuits and technology meeting | 1995
Erich Bayer; Walter Bucksch; Kevin Scoones; Konrad Wagensohner; J. Erdeljac; Louis N. Hutter
A 1.0 micron BiCMOS process, with lateral DMOS as an available process extension, is presented for mixed-signal and power applications, providing a broad range of active and passive components. The DMOS transistor offers 45-60 V capability with Rsp=1.25 m/spl Omega/.cm/sup 2/. The process has been used to build a 5A H-Bridge for automotive applications, the design of which is described in detail.
midwest symposium on circuits and systems | 1992
Louis N. Hutter; Jeffrey P. Smith; James Dogan Goon
Design issues associated with developing an analog BiCMOS process technology are reviewed. This information is then highlighted with an example of BiCMOS process stressing modularity and component diversity. Future technology issues for next-generation processes are discussed.<<ETX>>
Archive | 2002
Taylor R. Efland; Donald C. Abbott; Walter Bucksch; Marco Corsi; Chi-Cheong Shen; John P. Erdeljac; Louis N. Hutter; Quang X. Mai; Konrad Wagensohner; Charles E. Williams; Milton L. Buschbom
Archive | 1987
Louis N. Hutter
Archive | 1998
Chin-Yu Tsai; Taylor R. Efland; Sameer Pendharkar; John P. Erdeljac; Jozef Mitros; Jeffrey P. Smith; Louis N. Hutter
Archive | 1998
John P. Erdeljac; Louis N. Hutter; M. Ali Khatibzadeh; John K. Arch
Archive | 1988
Louis N. Hutter; James Dogan Goon; Shiu-Hang Yan; Gopal K. Rao
