Luis A. Miccio

Dielectric spectroscopy at the nanoscale by atomic force microscopy: A simple model linking materials properties and experimental response

The use of an atomic force microscope for studying molecular dynamics through dielectric spectroscopy with spatial resolution in the nanometer scale is a recently developed approach. However, difficulties in the quantitative connection of the obtained data and the material dielectric properties, namely, frequency dependent dielectric permittivity, have limited its application. In this work, we develop a simple electrical model based on physically meaningful parameters to connect the atomic force microscopy (AFM) based dielectric spectroscopy experimental results with the material dielectric properties. We have tested the accuracy of the model and analyzed the relevance of the forces arising from the electrical interaction with the AFM probe cantilever. In this way, by using this model, it is now possible to obtain quantitative information of the local dielectric material properties in a broad frequency range. Furthermore, it is also possible to determine the experimental setup providing the best sensitivity in the detected signal.

Determining concentration depth profiles in fluorinated networks by means of electric force microscopy

By means of electric force microscopy, composition depth profiles were measured with nanometric resolution for a series of fluorinated networks. By mapping the dielectric permittivity along a line going from the surface to the bulk, we were able to experimentally access to the fluorine concentration profile. Obtained data show composition gradient lengths ranging from 30 nm to 80 nm in the near surface area for samples containing from 0.5 to 5 wt. % F, respectively. In contrast, no gradients of concentration were detected in bulk. This method has several advantages over other techniques because it allows profiling directly on a sectional cut of the sample. By combining the obtained results with x-ray photoelectron spectroscopy measurements, we were also able to quantify F/C ratio as a function of depth with nanoscale resolution.

AFM based dielectric spectroscopy: Extended frequency range through excitation of cantilever higher eigenmodes

In the last years, a new AFM based dielectric spectroscopy approach has been developed for measuring the dielectric relaxation of materials at the nanoscale, the so called nanoDielectric Spectroscopy (nDS). In spite of the effort done so far, some experimental aspects of this technique remain still unclear. In particular, one of these aspects is the possibility of extending the experimental frequency range, to date limited at high frequencies by the resonance frequency of the AFM cantilever as a main factor. In order to overcome this limitation, the electrical excitation of cantilever higher eigenmodes for measuring the dielectric relaxation is here explored. Thus, in this work we present a detailed experimental analysis of the electrical excitation of the cantilever second eigenmode. Based on this analysis we show that the experimental frequency range of the AFM based dielectric spectroscopy can be extended by nearly two decades with a good signal-to-noise ratio. By using the combination of first and second cantilever eigenmodes we study dissipation processes on well known PVAc based polymeric samples. Both, relaxation spectra and images with molecular dynamics contrast were thus obtained over this broader frequency range.

Study of relaxation and transport processes by means of AFM based dielectric spectroscopy

Since its birth a few years ago, dielectric spectroscopy studies based on atomic force microscopy (AFM) have gained a growing interest. Not only the frequency and temperature ranges have become broader since then but also the kind of processes that can be studied by means of this approach. In this work we analyze the most adequate experimental setup for the study of several dielectric processes with a spatial resolution of a few nanometers by using force mode AFM based dielectric spectroscopy. Proof of concept experiments were performed on PS/PVAc blends and PMMA homopolymer films, for temperatures ranging from 300 to 400 K. Charge transport processes were also studied by this approach. The obtained results were analyzed in terms of cantilever stray contribution, film thickness and relaxation strength. We found that the method sensitivity is strongly coupled with the film thickness and the relaxation strength, and that it is possible to control it by using an adequate experimental setup.