Luo Kui

The effect of calcination temperature on nanosized tin oxide thin film

The effect of calcination on nanosized tin oxide film prepared by direct current reactive magnetron sputtering is investigated. The tin oxide semiconductors were calcined at different temperatures ranging from 400/spl deg/C to 900/spl deg/C. The testing results from SEM, XRD, XPS and the HP4145B semiconductor analyzer show that the composition, crystallinity and the resistance of the thin films change with the variation of calcination temperature.

A new release process in surface micromachining-double mask technology

This paper presents a new process for releasing micromechanical structures in surface micromachining with polysilicon support and LPCVD Si/sub 3/N/sub 4/ embedded mask for one polysilicon layer process, which is CMOS compatible and can be adjusted to be suitable for the structure stiffness by changing the distance between two supports. This process may be used for multipolysilicon layer process. The results of test structures show that this process may be a good technology to eliminate the sticking of microstructures to the substrate during the wafer drying after the sacrificial etching process.