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Lyndon W. Graham

Applied Materials

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international interconnect technology conference | 1998

Self-annealing of electrochemically deposited copper films in advanced interconnect applications

Tom Ritzdorf; Lyndon W. Graham; Shu Jin; Chun Mu; David Fraser

This paper describes the phenomenon of self-annealing of electrochemically deposited copper films. Sheet resistance was shown to decrease by approximately 20% within tens of hours after deposition at room temperature. At the same time, tensile film stress increased and X-ray diffraction results indicate a very large increase in the degree of film (111) texture, and/or grain growth. This annealing effect has an activation energy of approximately 1.1 eV, indicating that the time dependence on temperature is very strong.

Archive | 1999

Electroplating system having auxiliary electrode exterior to main reactor chamber for contact cleaning operations

Lyndon W. Graham; Kyle M. Hanson; Thomas L. Ritzdorf; Jeffrey I. Turner

Archive | 2003

Semiconductor plating system workpiece support having workpiece engaging electrodes with distal contact part and dielectric cover

Martin C. Bleck; Lyndon W. Graham; Kyle M. Hanson

Archive | 2003

Methods for controlling and/or measuring additive concentration in an electroplating bath

Lyndon W. Graham; Thomas C. Taylor; Thomas L. Ritzdorf; Fredrick A. Lindberg; Bradley C. Carpenter

Archive | 1999

Apparatus for low-temperature annealing of metallization microstructures in the production of a microelectronic device

Thomas L. Ritzdorf; E. Henry Stevens; Linlin Chen; Lyndon W. Graham; Curt Dundas

Archive | 1999

Method and apparatus for low-temperature annealing of metallization micro-structures in the production of a microelectronic device

Thomas L. Ritzdorf; E. Stevens; Linlin Chen; Lyndon W. Graham; Curt Dundas

Archive | 1997

Semiconductor plating bowl and method using anode shield

Thomas L. Ritzdorf; Jeffrey I. Turner; Lyndon W. Graham

Archive | 1998

Method for filling recessed micro-structures with metallization in the production of a microelectronic device

Thomas L. Ritzdorf; Lyndon W. Graham

Archive | 1999

Plating system workpiece support having workpiece-engaging electrodes with distal contact-part and dielectric cover

Martin C. Bleck; Lyndon W. Graham; Kyle M. Hanson

Archive | 2004

Method of submicron metallization using electrochemical deposition of recesses including a first deposition at a first current density and a second deposition at an increased current density

Linlin Chen; Lyndon W. Graham; Thomas L. Ritzdorf; Dakin Fulton; Robert W. Batz

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Thomas L. Ritzdorf

Applied Materials

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Linlin Chen

Applied Materials

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Curt Dundas

Applied Materials

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E. Henry Stevens

Applied Materials

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Kyle M. Hanson

Applied Materials

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Robert W. Batz

Applied Materials

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Gregory J. Wilson

Applied Materials

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