Lynn F. Fuller
Rochester Institute of Technology
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Proceedings., Eighth University/Government/Industry Microelectronics Symposium | 1989
Lynn F. Fuller; K.H. Hesler; Santosh K. Kurinec; Richard L. Lane; Robert Pearson; Bruce W. Smith; I.R. Turkman
Rochester Institute of Technology, College of Engineering, has established a new master of engineering degree program in microelectronics manufacturing engineering. The program is one year (four quarters) in duration and is designed for BS graduates in engineering or science. The core courses are Microelectronics I, II, III, Microlithography I, II, and Manufacturing Science I, II. Concentration courses may be selected from a list of courses including computer integrated manufacturing, statistical design of experiments, facilities design, safety, and others. The core courses are discussed, and the facilities are described.<<ETX>>
biennial university government industry microelectronics symposium | 2003
Lynn F. Fuller; Steven Sudirgo
Bulk micromachined piezoresistive pressure sensor was designed, fabricated, packaged, and tested at RIT laboratory facility. Every aspect of the fabrication is studied thoroughly and used as an educational tool in better understanding the fabrication of MEMs devices.
Proceedings., Eighth University/Government/Industry Microelectronics Symposium | 1989
G.A. Runkle; S.P. Blondell; Lynn F. Fuller; Richard L. Lane; Robert Pearson; Bruce W. Smith; I.R. Turkham; K.H. Hesler; Santosh K. Kurinec
The authors describe the systems that have been established for the operation of the microelectronics facility at the Rochester Institute of Technology. Attention is given to the organizational structure; support facilities; cleanroom maintenance; lab equipment; equipment operation; lab supplies, inventory, and control; lab safety; and the hazardous waste program.<<ETX>>
IEEE\/ASME Journal of Microelectromechanical Systems | 2011
Ivan Puchades; Lynn F. Fuller
A thermally actuated non-cantilever-beam microelectromechanical viscosity sensor is presented. The proposed device is based on thermally induced vibrations of a simple silicon diaphragm and its damping due to the surrounding fluid. This vibration viscometer device utilizes thermal actuation through an in situ resistive heater and piezoresistive sensing, both of which utilize CMOS compatible materials leading to an inexpensive and reliable system. Thermal analysis was performed utilizing temperature diodes in the silicon diaphragm to determine the minimum heater voltage pulse amplitude and time in order to prevent heat loss to the oil under test that would lead to local viscosity changes. Viscosity measurements were performed and compared to motor oil measured on a commercial cone-and-plate viscometer.
biennial university government industry microelectronics symposium | 1991
Lynn F. Fuller; S.P. Blondell; J. Tierney
Rochester Institute of Technology (RIT) has been operating a large integrated circuit laboratory for over four years. Approximately
biennial university government industry microelectronics symposium | 1997
Kerstin E. Babbitt; Lynn F. Fuller; Bradley Keller
750000 per year is donated equipment and supplies from industry, leaving a cost of
biennial university government industry microelectronics symposium | 1993
Lynn F. Fuller; Robert Pearson; I.R. Turkman; Santosh K. Kurinec; Richard L. Lane; Michael Jackson; Bruce W. Smith
315000 per year for operating this facility. Approximately
biennial university government industry microelectronics symposium | 1991
Lynn F. Fuller; Cem Karacal; Tom J. VanDenbosch; Steve Slagsvol; Mike Poponiak
100000 per year is available from RIT funds the remaining
advanced semiconductor manufacturing conference | 1990
Lynn F. Fuller
215000 is raised by an industrial associates program. Twenty one companies each donate
international conference on perspective technologies and methods in mems design | 2006
Jirachai Getpreecharsawas; Ivan Puchades; Bobby Hournbuckle; Lynn F. Fuller; Robert Pearson; Sergey Edward Lyshevski
10000 per year for these operating expenses. These companies include some of the affiliate companies who are beyond the first three-year commitment as well as other companies interested in supporting the microelectronic engineering program at RIT.<<ETX>>