M. Berginski

The effect of front ZnO:Al surface texture and optical transparency on efficient light trapping in silicon thin-film solar cells

This study addresses the material properties of magnetron-sputtered aluminum-doped zinc oxide (ZnO:Al) films and their application as front contacts in silicon thin-film solar cells. Optimized films exhibit high conductivity and transparency, as well as a surface topography with adapted light-scattering properties to induce efficient light trapping in silicon thin-film solar cells. We investigated the influence on the ZnO:Al properties of the amount of alumina in the target as well as the substrate temperature during sputter deposition. The alumina content in the target influences the carrier concentration leading to different conductivity and free carrier absorption in the near infrared. Additionally, a distinct influence on the film growth of the ZnO:Al layer was found. The latter affects the surface topography which develops during wet-chemical etching in diluted hydrochloric acid. Depending on alumina content in the target and heater temperature, three different regimes of etching behavior have been i...

Temperature stability of ZnO:Al film properties for poly-Si thin-film devices

The crystallization of thin silicon films at temperatures between 425 and 600°C was investigated on glass substrates coated with Al-doped zinc oxide (ZnO:Al). Bare ZnO:Al layers degrade at the crystallization temperatures used. A silicon layer on top, however, efficiently prevents deterioration. The resistivity was even found to drop from 4.3×10−4Ωcm for the as deposited ZnO:Al to 2.2×10−4Ωcm in the case of aluminium induced crystallization and to 3.4×10−4Ωcm for solid phase crystallization. The temperature-stable conductivity of ZnO:Al films coated with Si opens up appealing options for the production of polycrystalline silicon thin-film solar cells with transparent front contacts.

Design of ZnO:Al films with optimized surface texture for silicon thin-film solar cells

This study addresses the design of radio frequency (rf) magnetron sputtered aluminum doped zinc oxide (ZnO:Al) front contacts for silicon thin-film solar cells. Optimized films comprise high conductivity and transparency, as well as a surface topography trapping the light within the photovoltaically active layers. We have investigated the influence of the doping level of the target as well as the substrate temperature during sputter deposition on the ZnO:Al properties. The aluminum content in the target influences the transmission in the near infrared (NIR), the conductivity as well as the film growth of the ZnO:Al layer. The latter affects the surface topography which develops during wet-chemical etching in diluted hydrochloric acid. Depending on aluminum content in the target and heater temperature three different regimes of etching behavior have been identified. We have applied the ZnO:Al films as front contacts in thin-film silicon solar cells to study their light trapping ability. While high transparency is a prerequisite, the light trapping has been improved using front contacts with a surface topography consisting of relatively uniformly dispersed craters. We have identified low amount of target doping and high substrate temperatures as sputter parameters enabling high cell currents. Short-circuit current densities of up to 26.8 mA/cm2 have been realized in μc-Si:H single junction cell with absorber layer thickness of 1.9 μm.